ACS630MS TM Radiation Hardened EDAC (Error Detection and Correction Circuit) January 1996 itle CS6 MS) bt adian rded AC rror tecn d rn rit)) Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96711 and Intersil’ QM Plan 28 PIN CERAMIC DUAL-IN-LINE, MIL-STD-1835 DESIGNATOR CDIP2-T28, LEAD FINISH C TOP VIEW • 1.25 Micron Radiation Hardened SOS CMOS DEF 1 28 VCC • Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) DB0 2 27 SEF DB1 3 26 S1 DB2 4 25 S0 • SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg DB3 5 24 CB0 • Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse DB4 6 23 CB1 DB5 7 22 CB2 DB6 8 21 CB3 DB7 9 20 CB4 DB8 10 19 CB5 DB9 11 18 DB15 DB10 12 17 DB14 DB11 13 16 DB13 GND 14 15 DB12 • Single Event Upset (SEU) Immunity: <1 x 10 (Typ) • Dose Rate Survivability . . . . . . . . . . . >10 12 -10 Errors/Bit/Day RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range . . . . . . . . . . . . . . . . . . -55 oC to +125oC • Significant Power Reduction Compared to ALSTTL Logic • DC Operating Voltage Range . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min • Input Current ≤ 1µA at VOL, VOH • Fast Propagation Delay . . . . . . . . . . . . . . . . 37ns (Max), 24ns (Typ) thor eyrds nterrpoion, minctor, dian rded, , d Description The Intersil ACS630MS is a Radiation Hardened 16-bit parallel error detection and correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The check word is stored with the data word during a memory write cycle; during a memory read cycle a 22-bit word is taken form memory and checked for errors. Single bit errors in the data words are flagged and corrected. Single bit errors in check words are flagged but not corrected. The position of the incorrect bit is pinpointed, in both cases, by the 6-bit error syndrome code which is output during the error correction cycle. The ACS630MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic Family. 28 PIN CERAMIC FLATPACK, MIL-STD-1835 DESIGNATOR CDFP3-F28, LEAD FINISH C TOP VIEW DEF DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 DB8 DB9 DB10 DB11 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC SEF S1 S0 CB0 CB1 CB2 CB3 CB4 CB5 DB15 DB14 DB13 DB12 The ACS630MS is supplied in a 28 lead Ceramic Flatpack (K suffix) or a 28 Lead Ceramic Dual-In-Line Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE 5962F9671101VXC -55oC 5962F9671101VYC -55oC SCREENING LEVEL PACKAGE to +125oC MIL-PRF-38535 Class V 28 Lead SBDIP to +125oC MIL-PRF-38535 Class V 28 Lead Ceramic Flatpack ACS630D/Sample o 25 C Sample 28 Lead SBDIP ACS630K/Sample 25oC Sample 28 Lead Ceramic Flatpack ACS630HMSR 25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 Spec Number File Number 518781 3199.1 ACS630MS Function Tables Control Functions CONTROL ERROR FLAGS MEMORY CYCLE S1 S0 WRITE Low Low Generates Checkword Input Data READ Low High Read Data and Checkword READ High High READ High Low EDAC FUNCTION DATA I/O CHECKWORD SEF DEF Output Checkword Low Low Input Data Input Checkword Low Low Latch and Flag Error Latch Data Latch Checkword Enabled Enabled Correct Data Word and Generate Syndrome Bits Output Corrected Data Output Syndrome Bits Enabled Enabled 12 14 Check Word Generation 16-BIT DATA WORD CHECKWORD BIT 0 1 CB0 X X CB1 X X CB2 CB3 2 X X X X X CB4 3 4 X X 5 X 6 X X X 7 X 9 10 X X X X X 11 X X X X X X X X 15 X X CB5 13 X X X X 8 X X X X X X X X X X X X X NOTE: The six check bits are parity bits derived from the matrix of data bits as indicated by “x” for each bit Error Syndrome Codes ERROR LOCATIONS SYNDROME ERROR CODE 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 NO ERROR CB0 L L H L L H H H L L L H H L H H L H H H H H H CB1 L H L L H L L H L H H L H H L H H L H H H H H CB2 H L L H L L H L H L H H L H H L H H L H H H H CB3 L L L H H H L L H H L L L H H H H H H L H H H CB4 H H H L L L L L H H H H H L L L H H H H L H H CB5 H H H H H H H H L L L L L L L L H H H H H L H DB CB Error Functions TOTAL NUMBER OF ERRORS ERROR FLAGS 16-BIT DATA 6-BIT CHECKWORD SEF DEF DATA CORRECTION 0 0 Low Low Not Applicable 1 0 High Low Correction 0 1 High Low Correction 1 1 High High Interrupt 2 0 High High Interrupt 0 2 High High Interrupt Spec Number 2 518781 ACS630MS Die Characteristics DIE DIMENSIONS: 171 mils x 159 mils 4340mm x 4040mm METALLIZATION: Type: AlSi Metal 1 Thickness: 7.125kÅ ±1.125kÅ Metal 2 Thickness: 9kÅ ±1kÅ GLASSIVATION: Type: SiO2 Thickness: 8kÅ ±1kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 110µm x 110µm 4.4 mils x 4.4 mils Metallization Mask Layout ACS630MS DB2 DB1 DB0 DEF VCC SEF S1 (4) (3) (2) (1) (28) (27) (26) DB3 (5) (25) S0 DB4 (6) (24) CB0 DB5 (7) (23) CB1 DB6 (8) (22) CB2 DB7 (9) (21) CB3 DB8 (10) (20) CB4 DB9 (11) (19) CB5 (12) (13) (14) (15) (16) (17) (118) DB10 DB11 GND DB12 DB13 DB14 DB15 Spec Number 3 518781