IRFD9020, SiHFD9020 Datasheet

IRFD9020, SiHFD9020
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dv/dt Rating
VDS (V)
- 60
RDS(on) ()
VGS = - 10 V
Qg (Max.) (nC)
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
• Repetitive Avalanche Rated
0.28
Available
RoHS*
• For Automatic Insertion
COMPLIANT
• End Stackable
• P-Channel
• 175 °C Operating Temperature
Single
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
S
DESCRIPTION
HVMDIP
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
HVMDIP
IRFD9020PbF
Lead (Pb)-free
SiHFD9020-E3
IRFD9020
SnPb
SiHFD9020
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Gate-Source Voltage
SYMBOL
VGS
Continuous Drain Current
Pulsed Drain
VGS at - 10 V
TA = 25 °C
TA = 100 °C
Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche
Energya
Maximum Power Dissipation
Peak Diode Recovery
TA = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
LIMIT
± 20
UNIT
V
- 1.6
- 1.1
A
- 13
0.0083
W/°C
EAS
140
mJ
IAR
- 1.6
A
EAR
0.13
mJ
PD
1.3
W
dV/dt
- 4.5
V/ns
TJ, Tstg
- 55 to + 175
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 , IAS = - 3.2 A (see fig. 12).
c. ISD - 11 A, dI/dt - 140 A/s, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
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IRFD9020, SiHFD9020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
TYP.
MAX.
UNIT
RthJA
-
120
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = - 250 μA
- 60
-
-
V
VDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.056
-
V/°C
VGS(th)
VDS = VGS, ID = - 1 μA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = 20
-
-
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
-
-
- 100
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
-
-
0.28

1.3
-
-
S
-
570
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 0.96 Ab
VGS = - 10 V
VDS = - 25 V, ID = - 0.96
Ab
μA
Dynamic
VGS = 0 V
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 25 V
-
360
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
65
-
Total Gate Charge
Qg
-
-
19
-
-
5.4
VGS = - 10 V
ID = - 11 A, VDS = - 48 V,
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
11
Turn-On Delay Time
td(on)
-
13
-
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
see fig. 6 and 13b
VDD = - 30 V, ID = - 11 A
Rg = 18 , RD = 2.5, see fig.
Between lead,
6 mm (0.25") from
package and center of
die contact
10b
D
-
68
-
-
15
-
-
29
-
-
4.0
-
-
6.0
-
-
-
- 1.6
-
-
- 13
-
-
- 6.3
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 1.6 A, VGS = 0 Vb
TJ = 25 °C, IF = - 11A, di/dt = 100 A/μsb
V
-
100
200
ns
-
0.32
0.64
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
IRFD9020, SiHFD9020
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 3 - Typical Transfer Characteristics
TA = 175 °C
Fig. 2 - Typical Output Characteristics, TA = 175 °C
Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFD9020, SiHFD9020
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C
TJ = 150 °C
SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 8 - Maximum Safe Operating Area
Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
IRFD9020, SiHFD9020
Vishay Siliconix
RD
VDS
VGS
D.U.T.
-ID, Drain Current (A)
Rg
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on)
tr
td(off) tf
VGS
10 %
TA, Ambient Temperature (°C)
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJA)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
90 %
VDS
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
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IRFD9020, SiHFD9020
Vishay Siliconix
IAS
L
Vary tp to obtain
required IAS
VDS
D.U.T.
Rg
VDS
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
IRFD9020, SiHFD9020
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
+
• dV/dt controlled by Rg
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90170.
Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
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Package Information
Vishay Siliconix
HVM DIP (High voltage)
0.248 [6.29]
0.240 [6.10]
0.043 [1.09]
0.035 [0.89]
0.197 [5.00]
0.189 [4.80]
0.133 [3.37]
0.125 [3.18]
0.180 [4.57]
0.160 [4.06]
0.094 [2.38]
0.086 [2.18]
A
L
0.160 [4.06]
0.140 [3.56]
0° to 15°
2x
0.017 [0.43]
0.013 [0.33]
0.045 [1.14]
2 x 0.035 [0.89]
E min.
0.024 [0.60]
4x
0.020 [0.51]
0.100 [2.54] typ.
E max.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
A
0.310
0.330
7.87
MAX.
8.38
E
0.300
0.425
7.62
10.79
L
0.270
0.290
6.86
7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000