IRFD420, SiHFD420 Datasheet

IRFD420, SiHFD420
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V)
500
RDS(on) ()
• Repetitive Avalanche Rated
VGS = 10 V
3.0
Qg (Max.) (nC)
24
Qgs (nC)
3.3
Qgd (nC)
13
Configuration
RoHS*
• End Stackable
COMPLIANT
• Fast Switching
• Ease of Paralleling
Single
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
HVMDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1 inch pin centers. The dual drain serves as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
G
S
Available
• For Automatic Insertion
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
HVMDIP
IRFD420PbF
SiHFD420-E3
IRFD420
SiHFD420
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TA = 25 °C
TA = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
0.37
0.23
A
3.0
0.0083
W/°C
Single Pulse Avalanche Energyb
EAS
51
mJ
Repetitive Avalanche Currenta
IAR
0.37
A
Repetitive Avalanche Energya
EAR
0.10
mJ
PD
1.0
W
dV/dt
3.5
V/ns
TJ, Tstg
- 55 to + 150
Maximum Power Dissipation
Peak Diode Recovery
TA = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
300d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 40 mH, Rg = 25 , IAS = 1.5 A.
c. ISD  4.4 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
www.vishay.com
1
IRFD420, SiHFD420
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
TYP.
MAX.
UNIT
RthJA
-
120
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.59
-
V/°C
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 0.22 Ab
VGS = 10 V
VDS = 50 V, ID = 1.3 Ab
μA
-
-
3.0

1.5
-
-
S
-
360
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
-
92
-
-
37
-
-
-
24
-
-
3.3
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
13
Turn-On Delay Time
td(on)
-
8.0
-
tr
-
8.6
-
-
33
-
-
16
-
-
4.0
-
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
VGS = 10 V
ID = 2.1 A, VDS = 400
Vb
VDD = 250 V, ID = 2.1 A,
Rg = 18 , RD = 120 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
6.0
-
-
-
0.37
S
-
-
5.0
TJ = 25 °C, IS = 0.37 A, VGS = 0 Vb
-
-
1.6
V
-
260
520
ns
-
0.70
1.4
μC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
IRFD420, SiHFD420
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 3 - Typical Transfer Characteristics
TA = 150 °C
Fig. 2 - Typical Output Characteristics, TA = 150 °C
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3
IRFD420, SiHFD420
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C
TJ = 150 °C
SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Fig. 8 - Maximum Safe Operating Area
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
IRFD420, SiHFD420
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
ID, Drain Current (A)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
TA, Ambient Temperature (°C)
td(on)
td(off) tf
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJA)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
tr
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
www.vishay.com
5
IRFD420, SiHFD420
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
Rg
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Fig. 13b - Gate Charge Test Circuit
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
IRFD420, SiHFD420
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91135.
Document Number: 91135
S10-2463-Rev. C, 08-Nov-10
www.vishay.com
7
Package Information
Vishay Siliconix
HVM DIP (High voltage)
0.248 [6.29]
0.240 [6.10]
0.043 [1.09]
0.035 [0.89]
0.197 [5.00]
0.189 [4.80]
0.133 [3.37]
0.125 [3.18]
0.180 [4.57]
0.160 [4.06]
0.094 [2.38]
0.086 [2.18]
A
L
0.160 [4.06]
0.140 [3.56]
0° to 15°
2x
0.017 [0.43]
0.013 [0.33]
0.045 [1.14]
2 x 0.035 [0.89]
E min.
0.024 [0.60]
4x
0.020 [0.51]
0.100 [2.54] typ.
E max.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
A
0.310
0.330
7.87
MAX.
8.38
E
0.300
0.425
7.62
10.79
L
0.270
0.290
6.86
7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000