CD4060BMS CMOS 14 Stage Ripple-Carry Binary Counter/Divider and Oscillator December 1992 Pinout Features • High Voltage Type (20V Rating) • Common Reset • 12MHz Clock Rate at 15V Q12 1 16 VDD Q13 2 15 Q10 Q14 3 14 Q8 • Fully Static Operation Q6 4 13 Q9 • Buffered Inputs and Outputs Q5 5 12 RESET • Schmitt Trigger Input Pulse Line Q7 6 11 øI Q4 7 10 ø0 VSS 8 9 ø0 • Standardized, Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Functional Diagram Oscillator Features Q4 • All Active Components on Chip Q5 • RC or Crystal Oscillator Configuration Q6 • RC Oscillator Frequency of 690kHz Min. at 15V Q7 R 12 14 STAGE RIPPLE COUNTER AND OSCILLATOR Applications • Control counters øI 11 • Timers Q8 Q9 Q10 Q12 • Frequency Dividers VSS = 8 VDD = 16 • Time Delay Circuits Q13 Q14 7 5 4 6 14 13 15 1 2 3 Description CD4060BMS consists of an oscillator section and 14 ripple carry binary counter stages. The oscillator configuration allows design of either RC or crystal oscillator circuits. A RESET input is provided which resets the counter to the all O’s state and disables the oscillator. A high level on the RESET line accomplishes the reset function. All counter stages are master slave flip-flops. The state of the counter is advanced one step in binary order on the negative transition of øI (and ø0). All inputs and outputs are fully buffered. Schmitt trigger action on the input pulse line permits unlimited input pulse rise and fall times. ø0 9 ø0 10 The CD4060BMS is supplied in these 16 lead outline packages: Braze Seal DIP H4W Frit Seal DIP H1F Ceramic Flatpack H6W CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-949 File Number 3317 Specifications CD4060BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 GROUP A SUBGROUPS LIMITS TEMPERATURE MIN +25 - 10 µA +125oC - 1000 µA 3 -55oC - 10 µA 1 +25o C -100 - nA 2 +125oC -1000 - nA 3 -55oC -100 - nA 1 +25oC - 100 nA 2 +125oC - 1000 nA - 100 nA - 50 mV - V 3 Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 Output Current (Sink) (Excluding pins 9 & 10) Output Current (Source) (Excluding pins 9 & 10) N Threshold Voltage P Threshold Voltage Functional IOL5 VDD = 5V, VOUT = 0.4V UNITS 1 -55oC VDD = 18V MAX 2 oC 1 +25oC 0.53 - mA IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 1.4 - mA IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 3.5 - mA 1 +25oC - -0.53 mA 1 +25oC - -1.8 mA IOH5A IOH5B VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -1.4 mA IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -3.5 mA 1 +25oC -2.8 -0.7 V 1 +25oC 0.7 2.8 V VNTH VPTH F VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 4 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11 - V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 7-950 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. Specifications CD4060BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CONDITIONS (NOTES 1, 2) Propagation Delay Input Pulse Operation øI to Q4 TPHL1 TPLH1 VDD = 5V, VIN = VDD or GND Propagation Delay QN to QN + 1 TPHL2 TPLH2 VDD = 5V, VIN = VDD or GND Propagation Delay RESET Transition Time Maximum Input Pulse Frequency TPHL3 TTHL TTLH GROUP A SUBGROUPS TEMPERATURE 10, 11 VDD = 5V, VIN = VDD or GND VDD = 5V VIN = VDD or GND -55oC +25oC o o +125 C, -55 C o MIN MAX UNITS - 740 ns - 999 ns - 200 ns - 270 ns 9 +25 C - 360 ns 10, 11 +125oC, -55oC - 486 ns - 200 ns - 270 ns o 9 10, 11 FØI +125oC, 9 10, 11 VDD = 5V, VIN = VDD or GND +25oC 9 LIMITS +25 C o o +125 C, -55 C o 9 +25 C 3.5 - MHz 10, 11 +125oC, -55oC 2.59 - MHz MIN MAX UNITS - 5 µA +125 C - 150 µA oC, - 10 µA NOTES: 1. VDD = 5V, CL = 50pF, RL = 200K 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS NOTES VDD = 5V, VIN = VDD or GND 1, 2 TEMPERATURE -55oC, +25oC o VDD = 10V, VIN = VDD or GND 1, 2 -55 +25oC +125 C - 300 µA -55oC, +25oC - 10 µA +125oC - 600 µA oC, +125oC, - 50 mV o VDD = 15V, VIN = VDD or GND Output Voltage VOL VDD = 5V, No Load 1, 2 1, 2 +25 -55oC Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -55oC 9.95 - V Output Current (Sink) (Excluding pins 9 & 10) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 0.36 - mA 0.64 - mA 0.9 - mA 1.6 - mA Output Current (Sink) (Excluding pins 9 & 10) -55 IOL10 VDD = 10V, VOUT = 0.5V 1, 2 oC +125 -55 Output Current (Sink) (Excluding pins 9 & 10) IOL15 Output Current (Source) (Excluding pins 9 & 10) IOH5A Output Current (Source) (Excluding pins 9 & 10) IOH5B Output Current (Source) (Excluding pins 9 & 10) IOH10 VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V 1, 2 1, 2 1, 2 2.4 - mA -55oC 4.2 - mA +125oC - -0.36 mA - -0.64 mA - -1.15 mA - -2.0 mA - -0.9 mA - -1.6 mA +125 1, 2 oC +125oC -55 7-951 oC +125oC -55 VDD = 10V, VOUT = 9.5V oC oC -55 VDD = 5V, VOUT = 2.5V oC oC Specifications CD4060BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Output Current (Source) (Excluding pins 9 & 10) IOH15 CONDITIONS VDD =15V, VOUT = 13.5V NOTES TEMPERATURE MIN MAX UNITS 1, 2 +125oC - -2.4 mA -55 C - -4.2 mA o Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC - 3 V Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -55oC +7 - V Drive Current at Pin 9 Oscillator Design IOL VDD = 5V, VO = .4V 3 +25oC 0.16 - mA 3 +25oC 0.42 - mA VDD = 10V, VO = .5V VDD = 15V, VO = 1.5V Drive Current at Pin 9 Oscillator Design IOH VDD = 5V VDD = 10V VDD = 15V Propagation Delay Input Pulse øI to Q4 TPHL1 TPLH1 VDD = 10V VDD = 15V Propagation Delay QN to QN + 1 TPHL2 TPLH2 VDD = 10V Propagation Delay RESET Transition Time Maximum Input Pulse Frequency Minimum RESET Pulse Width Minimum Input Pulse Width F = 100kHz TPHL3 VDD = 15V FØI RC Operation CX Max RX CX RC Operation Variation of Frequency (Unit-to-Unit) CX = 200pF RS = 560K RX = 50k 1, 2, 3 - -.42 mA 1, 2, 3 o +25 C - 1.0 mA 1, 2, 3 +25o C C - 300 ns 1, 2, 3 +25 oC - 200 ns 1, 2, 3 +25oC - 100 ns 1, 2, 3 +25oC - 160 ns 1, 2, 3 +25 oC - 100 ns VDD = 10V 1, 2, 3 +25o C - 100 ns VDD = 15V 1, 2, 3 +25oC - 80 ns 8 - MHz 12 - MHz C - 120 ns oC - 60 ns VDD = 10V VDD = 5V o 1, 2, 3 +25 C 1, 2, 3 +25 oC 1, 2, 3 +25o 1, 2, 3 +25 VDD = 15V 1, 2, 3 +25o C - 40 ns VDD = 5V 1, 2, 3 +25oC - 100 ns VDD = 10V 1, 2, 3 +25oC - 40 ns 1, 2, 3 oC - 30 ns 2, 3 +25oC - 20 MΩ VDD = 10V, CX = 50µF 2, 3 +25 oC - 20 MΩ VDD = 15V, CX = 10µF 2, 3 +25oC - 10 MΩ 2, 3 +25 oC - 1000 µF +25 oC - 50 µF 2, 3 +25 oC - 50 µF VDD = 10V 2, 3 +25oC 530 810 ns VDD = 15V 2, 3 +25oC 690 940 ns 2, 3 +25 oC 18 25 kHz 2, 3 +25 oC 20 26 kHz 2, 3 +25oC 21.1 27 kHz 2, 3 +25 oC - 2 kHz +25 oC - 1 kHz VDD = 5V, CX = 10µF VDD = 5V, RX = 500kΩ 2, 3 VDD = 5V VDD = 10V VDD = 15V Variation of Frequency with Voltage Change (Same Unit) mA +25o +25 C VDD = 15V, RX = 300kΩ RX = 5kΩ CX = 15pF mA -.16 1, 2, 3 VDD = 10V VDD = 10V, RX = 300kΩ Maximum Oscillator Frequency (Note 4) - - ns VDD = 15V RC Operation RX Max -1.0 80 VDD = 10V TW +25 C +25oC - VDD = 15V TW 3 1, 2, 3 o VDD = 15V TTHL TTLH o CX = 200pF 5V to 10V RS = 560K 10V to 15V RX = 50k 2, 3 7-952 +25 Specifications CD4060BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL Input Capacitance CIN CONDITIONS Any Input NOTES TEMPERATURE MIN MAX UNITS 1, 2 +25oC - 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. RC Oscillator applications are not recommended at supply voltages below 7V for RX < 50kΩ. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 25 µA o -2.8 -0.2 V o Supply Current N Threshold Voltage VNTH N Threshold Voltage Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25 C - ±1 V P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V P Threshold Voltage Delta ∆VTP Functional F VDD = 10V, ISS = -10µA 1, 4 VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND +25 C 1, 4 +25 C - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns o VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-2 IDD ± 1.0µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A 100% 5004 1, 7, 9, Deltas CONFORMANCE GROUP PDA (Note 1) Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 PDA (Note 1) Final Test Group A Group B Group D 7-953 READ AND RECORD IDD, IOL5, IOH5A Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 Specifications CD4060BMS TABLE 6. APPLICABLE SUBGROUPS (Continued) MIL-STD-883 METHOD CONFORMANCE GROUP GROUP A SUBGROUPS READ AND RECORD NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 Note 1 1 - 7, 9, 10, 13 - 15 8, 11, 12 16 Static Burn-In 2 Note 1 1 - 7, 9, 10, 13 - 15 8 11, 12, 16 Dynamic Burn-In Note 1 - 8, 12 16 1 - 7, 9, 10, 13 - 15 8 11, 12, 16 Irradiation Note 2 9V ± -0.5V 50kHz 25kHz 1 - 7, 9, 10, 13 - 15 11 - NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V Logic Diagram ø0 9 ø 0 10 *** ø I 11 * * ø1 Q1 * FF1 ø1 Q1 ø2 Q13 FF2-FF13 ø2 Q13 ø14 Q14 FF14 ø14 Q14 Q14 * ** RESET 12 Q4 - Q10 Q12, Q13 **R = HIGH DOMINATES (RESETS ALL STAGES) VDD ***COUNTER ADVANCES ONE BINARY COUNT ON EACH NEGATIVE - GOING TRANSITION OF øI (AND øO) *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS DETAIL OF TYPICAL FLIP-FLOP STAGE ø ø p p R n n Q R ø ø ø ø p p n n ø ø 7-954 Q CD4060BMS AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = 15V 25 20 15 10V 10 5 5V 0 5 10 AMBIENT TEMPERATURE (TA) = +25oC 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 10V 7.5 5.0 2.5 15 5V 0 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 1. TYPICAL N-CHANNEL OUTPUT LOW SINK CURRENT CHARACTERISTICS 0 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 2. MINIMUM N-CHANNEL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 0 -5 -10 -15 -10V -20 -25 -15V -30 -5 -10V PROPAGATION DELAY TIME (tPLH, tPHL) (ns) PROPAGATION DELAY TIME (tPLH, tPHL) (ns) SUPPLY VOLTAGE (VDD) = 5V 100 10V 50 15V 40 60 80 -15 FIGURE 4. MINIMUM P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 150 20 -10 -15V AMBIENT TEMPERATURE (TA) = +25oC 0 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 3. TYPICAL P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 0 0 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 30 OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Curves 100 LOAD CAPACITANCE (CL) (pF) FIGURE 5. TYPICAL PROPAGATION DELAY TIME (QN TO QN+1) AS A FUNCTION OF LOAD CAPACITANCE 7-955 AMBIENT TEMPERATURE (TA) = +25oC 700 600 500 SUPPLY VOLTAGE (VDD) = 5V 400 300 10V 200 100 0 15V 0 20 40 60 80 LOAD CAPACITANCE (CL) (pF) 100 FIGURE 6. TYPICAL PROPAGATION DELAY TIME (Ø1 TO Q4 OUTPUT) AS A FUNCTION OF LOAD CAPACITANCE CD4060BMS (Continued) 105 TRANSITION TIME (tTHL, tTLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 15V 50 0 0 20 DYNAMIC POWER DISSIPATION (PD) (µW) Typical Performance Curves 8 6 4 2 104 SUPPLY VOLTAGE (VDD) = 15V 8 6 4 10V 2 5V 10V 103 8 6 4 2 LOAD CAPACITANCE 102 8 6 4 CL = 50pF CL = 15pF 2 10 40 60 80 100 LOAD CAPACITANCE (CL) (pF) AMBIENT TEMPERATURE (TA) = +25oC 2 4 6 8 0.1 2 1 4 6 8 2 10 4 6 8 102 2 4 6 8 103 2 4 6 8 104 INPUT FREQUENCY (føI) (kHz) FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY Test Circuits VDD 500µF ID CL CL CL CL CL 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 CL CX CL CL RX RS CL 11 10 9 CL NOTE: RS IS 2RX TO 10RX T = 2.2 RXCX PULSE GENERATOR 12 FIGURE 9. DYNAMIC POWER DISSIPATION TEST CIRCUIT FIGURE 10. TYPICAL RC CIRCUIT 7-956 CD4060BMS Test Circuits (Continued) 11 C1 9 10 RC RS C2 NOTE: CXTAL = C1 + C2 + CSTRAY RC = Broader frequency response RS = Current limiting FIGURE 11. TYPICAL CRYSTAL CIRCUIT Chip Dimensions and Pad Layout Dimension in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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