LTC4364-1/LTC4364-2 Surge Stopper with Ideal Diode FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 4V to 80V Withstands Surges Over 80V with VCC Clamp Adjustable Output Clamp Voltage Ideal Diode Controller Holds Up Output Voltage During Input Brownouts Reverse Input Protection to –40V Reverse Output Protection to –20V Overcurrent Protection Low 10μA Shutdown Current at 12V Adjustable Fault Timer 0.1% Retry Duty Cycle During Faults (LTC4364-2) Available in 4mm × 3mm 14-Lead DFN, 16-Lead MSOP, and 16-Lead SO Packages The LTC®4364 surge stopper with ideal diode controller protects loads from high voltage transients. It limits and regulates the output during an overvoltage event, such as load dump in automobiles, by controlling the voltage drop across an external N-channel MOSFET pass device. The LTC4364 also includes a timed, current limited circuit breaker. In a fault condition, an adjustable fault timer must expire before the pass device is turned off. The LTC4364-1 latches off the pass device while the LTC4364-2 automatically restarts after a delay. The LTC4364 precisely monitors the input supply for overvoltage (OV) and undervoltage (UV) conditions. The external MOSFET is held off in undervoltage and auto-retry is disabled in overvoltage. APPLICATIONS n n n n An integrated ideal diode controller drives a second MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. The LTC4364 controls the forward voltage drop across the MOSFET and minimizes reverse current transients upon power source failure, brownout or input short. Automotive/Avionic Surge Protection Hot Swap/Live Insertion Redundant Supply ORing Output Port Protection L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION Overvoltage Protector Regulates Output at 27V During Input Transient 4A, 12V Overvoltage Output Regulator with Ideal Diode Withstands 200V 1ms Transient at VIN FDB33N25 VIN 12V 2.2k 6.8nF VCC SHDN OV 60V 10mΩ + 383k CMZ5945B 68V UV 6V FDB3682 22µF VOUT CLAMPED AT 27V 10Ω OUT FB ENABLE FAULT FLT TMR 27V CLAMP (ADJUSTABLE) 50ms/DIV 102k ENOUT OV GND 12V 4364 TA01b Ideal Diode Holds Up Output During Input Short 4.99k LTC4364 90.9k CTMR = 6.8µF ILOAD = 0.5A VIN 20V/DIV VOUT 20V/DIV 12V HGATE SOURCE DGATE SENSE UV 10k 92V INPUT SURGE 12V VIN 10V/DIV INPUT SHORTED TO GND CLOAD = 6300µF ILOAD = 0.5A 436412 TA01a 0.22µF VOUT 12V 10V/DIV OUTPUT HELD UP 1ms/DIV 4364 TA01c 436412f 1 LTC4364-1/LTC4364-2 ABSOLUTE MAXIMUM RATINGS (Notes 1, 2) Supply Voltage: VCC .................................. –40V to 100V SOURCE, OV, UV, SHDN Voltages.............. –40V to 100V DGATE, HGATE Voltages (Note 3)...................... SOURCE – 0.3V to SOURCE + 10V ENOUT, FLT Voltages................................. –0.3V to 100V OUT, SENSE Voltages.................................–20V to 100V Voltage Difference (SENSE to OUT)............. –30V to 30V Voltage Difference (OUT to VCC)...............–100V to 100V Voltage Difference (SENSE to SOURCE)...–100V to 100V FB, TMR Voltages...................................... –0.3V to 5.5V Operating Ambient Temperature Range LTC4364C................................................. 0°C to 70°C LTC4364I..............................................–40°C to 85°C LTC4364H........................................... –40°C to 125°C Storage Temperature Range................... –65°C to 150°C Lead Temperature (Soldering, 10 sec) MS, SO Packages.............................................. 300°C PIN CONFIGURATION TOP VIEW TOP VIEW OUT 1 14 FB SENSE 2 13 TMR DGATE 3 12 ENOUT SOURCE 4 15 11 FLT HGATE 5 10 GND VCC 6 9 OV SHDN 7 8 UV OUT 1 TOP VIEW OUT SENSE NC DGATE SOURCE HGATE NC VCC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 FB TMR ENOUT FLT GND OV UV SHDN MS PACKAGE 16-LEAD PLASTIC MSOP TJMAX = 150°C, θJA = 120°C/W DE PACKAGE 14-LEAD (4mm × 3mm) PLASTIC DFN TJMAX = 150°C, θJA = 45°C/W EXPOSED PAD (PIN 15) PCB GND CONNECTION OPTIONAL SENSE 2 NC 3 DGATE 4 SOURCE 5 16 FB 15 TMR 14 ENOUT 13 FLT 12 GND HGATE 6 11 OV NC 7 10 UV VCC 8 9 SHDN S PACKAGE 16-LEAD PLASTIC SO TJMAX = 150°C, θJA = 100°C/W ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC4364CDE-1#PBF LTC4364CDE-1#TRPBF 43641 14-Lead (4mm × 3mm) Plastic DFN 0°C to 70°C LTC4364IDE-1#PBF LTC4364IDE-1#TRPBF 43641 14-Lead (4mm × 3mm) Plastic DFN –40°C to 85°C LTC4364HDE-1#PBF LTC4364HDE-1#TRPBF 43641 14-Lead (4mm × 3mm) Plastic DFN –40°C to 125°C LTC4364CDE-2#PBF LTC4364CDE-2#TRPBF 43642 14-Lead (4mm × 3mm) Plastic DFN 0°C to 70°C LTC4364IDE-2#PBF LTC4364IDE-2#TRPBF 43642 14-Lead (4mm × 3mm) Plastic DFN –40°C to 85°C LTC4364HDE-2#PBF LTC4364HDE-2#TRPBF 43642 14-Lead (4mm × 3mm) Plastic DFN –40°C to 125°C LTC4364CMS-1#PBF LTC4364CMS-1#TRPBF 43641 16-Lead Plastic MSOP 0°C to 70°C LTC4364IMS-1#PBF LTC4364IMS-1#TRPBF 43641 16-Lead Plastic MSOP –40°C to 85°C LTC4364HMS-1#PBF LTC4364HMS-1#TRPBF 43641 16-Lead Plastic MSOP –40°C to 125°C LTC4364CMS-2#PBF LTC4364CMS-2#TRPBF 43642 16-Lead Plastic MSOP 0°C to 70°C LTC4364IMS-2#PBF LTC4364IMS-2#TRPBF 43642 16-Lead Plastic MSOP –40°C to 85°C LTC4364HMS-2#PBF LTC4364HMS-2#TRPBF 43642 16-Lead Plastic MSOP –40°C to 125°C 436412f 2 LTC4364-1/LTC4364-2 ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC4364CS-1#PBF LTC4364CS-1#TRPBF LTC4364S-1 16-Lead Plastic SO 0°C to 70°C LTC4364IS-1#PBF LTC4364IS-1#TRPBF LTC4364S-1 16-Lead Plastic SO –40°C to 85°C LTC4364HS-1#PBF LTC4364HS-1#TRPBF LTC4364S-1 16-Lead Plastic SO –40°C to 125°C LTC4364CS-2#PBF LTC4364CS-2#TRPBF LTC4364S-2 16-Lead Plastic SO 0°C to 70°C LTC4364IS-2#PBF LTC4364IS-2#TRPBF LTC4364S-2 16-Lead Plastic SO –40°C to 85°C LTC4364HS-2#PBF LTC4364HS-2#TRPBF LTC4364S-2 16-Lead Plastic SO –40°C to 125°C Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS 80 V 750 µA VCC Operating Supply Range ICC Supply Current VCC = SOURCE = SENSE = OUT = 12V, No Fault l 370 ICC(SHDN) Supply Current in Shutdown Shutdown l 10 50 μA ICC(REV) Reverse Input Current VCC = −30V l 0 –10 μA ∆VHGATE HGATE Gate Drive, (VHGATE − VSOURCE) VCC = 4V, DGATE Low, IHGATE = 0µA, −1µA VCC = 8V to 80V, DGATE Low, IHGATE = 0µA, −1µA l l 5 10 7 12 9 16 V V IHGATE(UP) HGATE Pull-Up Current VCC = HGATE = DGATE = SOURCE = 12V l –10 –20 –30 µA IHGATE(DN) HGATE Pull-Down Current Overvoltage: FB = 1.5V, ∆VHGATE = 5V l 60 130 mA Overcurrent: ∆VSNS = 100mV, ∆VHGATE = 5V l 60 130 mA 0.4 l 4 Surge Stopper Shutdown/Fault Turn-Off: ∆VHGATE = 5V l ISRC SOURCE Input Current VCC = SOURCE = SENSE = OUT = 12V VCC = SOURCE = 12V, Shutdown VSOURCE = –30V l l l VFB FB Servo Voltage VCC = 12V to 80V l 1 mA 18 32 –2.0 40 90 –3.5 µA µA mA 1.22 1.25 1.28 V 0 1 µA 45 43 18 50 50 25 55 57 32 mV mV mV 55 –2 110 –4 µA mA IFB FB Input Current FB = 1.25V l ∆VSNS Overcurrent Fault Threshold, (VSENSE – VOUT) VCC = 4V to 80V, OUT = 2.5V to VCC, 0°C to 125°C VCC = 4V to 80V, OUT = 2.5V to VCC, –40°C to 125°C VCC = 4V to 80V, OUT = 0V to 1.5V l l l ISNS SENSE Input Current SENSE = VCC = SOURCE = OUT = 12V SENSE = –15V l l ITMR(UP) TMR Pull-Up Current, Overvoltage TMR = 1V, FB = 1.5V, VCC – OUT = 0.5V TMR = 1V, FB = 1.5V, VCC – OUT = 75V l l –1.3 –40 –2.2 –50 –3 –60 µA µA TMR Pull-Up Current, Overcurrent TMR = 1V, ∆VSNS = 60mV, VCC – OUT = 0.5V TMR = 1V, ∆VSNS = 60mV, VCC – OUT = 75V l l –6 –210 –10 –260 –14 –310 µA µA TMR Pull-Up Current, Warning TMR = 1.3V, FB = 1.5V, VCC – OUT = 0.5V l –3 –5 –7 µA TMR Pull-Up Current, Retry TMR = 1V, FB = 1.5V l –1.3 –2 –3 µA ITMR(DN) TMR Pull-Down Current TMR = 1V, FB = 1.5V, Retry Shutdown l l 1.1 0.3 2 0.75 2.7 1.5 µA mA VTMR(F) TMR Fault Threshold FLT Falling, VCC = 4V to 80V l 1.22 1.25 1.28 V VTMR(G) TMR Gate Off Threshold HGATE Falling, VCC = 4V to 80V l 1.32 1.35 1.38 V 436412f 3 LTC4364-1/LTC4364-2 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VTMR(R) TMR Retry Threshold HGATE Rising (After 32 Cycles), VCC = 4V to 80V l 0.125 0.15 0.175 V ∆VTMR Early Warning Timer Window VTMR(G) – VTMR(F), VCC = 4V to 80V l 75 100 125 UV Falling, VCC = 4V to 80V l 1.22 1.25 1.28 l 25 50 80 mV mV VUV UV Input Threshold VUV(HYST) UV Input Hysteresis VUV(RST) UV Reset Threshold UV Falling, VCC = 4V to 80V, LTC4364-1 Only l 0.5 0.6 0.7 V VOV OV Input Threshold OV Rising, VCC = 4V to 80V l 1.22 1.25 1.28 V V VOV(HYST) OV Input Hysteresis IIN UV, OV Input Current UV, OV = 1.25V UV, OV = –30V l l 0 –0.3 1 –0.6 µA mA VOL ENOUT, FLT Output Low ISINK = 0.25mA ISINK = 2mA l l 0.1 0.5 0.3 1.3 V V ILEAK ENOUT, FLT Leakage Current ENOUT, FLT = 80V l 0 2.5 µA ∆VOUT(TH) Out High Threshold (VCC – VOUT) ENOUT from Low to High l 0.4 0.7 1 V VOUT(RST) Out Reset Threshold ENOUT from High to Low l 1.4 2.2 3 V IOUT OUT Input Current VCC = OUT = 12V, SHDN Open OUT = –15V l l 40 –4 80 –8 µA mA Output Current in Shutdown, ISNS + IOUT VCC = SOURCE = SENSE = OUT = 12V, Shutdown l VSHDN SHDN Input Threshold VCC = 4V to 80V l 0.5 VSHDN(FLT) SHDN Pin Float Voltage VCC = 12V to 80V l ISHDN SHDN Input Current SHDN = 0.5V Maximum Allowable Leakage, VCC = 4V SHDN = –30V l 12 mV 12 40 µA 1.6 2.2 V 2.3 4 6.5 V –1 l –3.3 –1.5 –120 –300 µA µA µA FB = 1.5V, VCC = 80V, OUT = 16V ∆VSNS = 60mV, VCC – OUT = 12V l l 0.125 0.075 0.2 0.12 % % tOFF,HGATE(UV) Undervoltage to HGATE Low Propagation Delay UV Steps from 1.5V to 1V l 1.3 4 μs tOFF,HGATE(OV) Overvoltage to HGATE Low Propagation Delay FB Steps from 1V to 1.5V l 0.25 1 μs tOFF,HGATE(OC) Overcurrent to HGATE Low Propagation Delay ∆VSNS Steps from 0mV to 150mV, OUT = 0V l 0.5 2 μs D Retry Duty Cycle, Overvoltage Retry Duty Cycle, Output Short Ideal Diode ΔVDGATE DGATE Gate Drive, (VDGATE − VSOURCE) VCC = 4V, No Fault, IDGATE = 0µA, −1µA VCC = 8V to 80V, No Fault, IDGATE = 0µA, −1µA l l 5 10 8.5 12 12 16 V V IDGATE(UP) DGATE Pin Pull-Up Current DGATE = SOURCE = VCC = 12V, ∆VSD = 0.1V l –5 –10 –15 µA IDGATE(DN) DGATE Pin Pull-Down Current ∆VDGATE = 5V, ∆VSD = –0.2V ∆VDGATE = 5V, Shutdown/Fault Turn-Off l l 60 0.4 130 1 ∆VSD Ideal Diode Regulation Voltage, (VSOURCE − VSENSE) ∆VDGATE = 2.5V, VCC = SOURCE = 12V ∆VDGATE = 2.5V, VCC = SOURCE = 4V l l 10 24 30 48 45 72 mV mV tOFF(DGATE) DGATE Turn-Off Propagation Delay ∆VSD Steps from 0.1V to –1V l 0.35 1.5 μs Note 1: Stress beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All Currents into device pins are positive and all currents out of device pins are negative. All voltages are referenced to GND unless otherwise specified. mA mA Note 3: Internal clamps limit the HGATE and DGATE pins to minimum of 10V above the SOURCE pin. Driving these pins to voltages beyond the clamp may damage the device. 436412f 4 LTC4364-1/LTC4364-2 TYPICAL PERFORMANCE CHARACTERISTICS Supply Current vs VCC VCC = SOURCE = SENSE = OUT 400 300 250 200 ISNS + IOUT 150 SHDN = 0 12 OUT = 0 40 30 20 OUT = VCC 10 50 0 10 20 40 30 50 60 70 0 80 20 10 0 30 40 50 VCC (V) 60 OUT = 0 8 OUT = 12V 6 ISNS + IOUT in Shutdown vs VCC 100 70 0 –50 –25 80 –24 SOURCE = VCC HGATE = DGATE = SOURCE = VCC ∆VSD = 100mV 20 12 ∆VHGATE (V) IGATE(UP) (µA) 40 DGATE –8 –4 20 30 40 50 60 70 0 80 4 8 6 10 VCC (V) 12 20 VCC (V) 40 9 60 6 80 0 –10 –5 –15 436412 G05 436412 G06 ∆VHGATE vs VIN in Figure 1 ∆VDGATE vs IDGATE VCC = 12V 13 –20 IHGATE (µA) 436412 G04 14 10 7 SNS = OUT = 12V 10 11 8 SNS = OUT = 24V 0 VCC = 12V 13 –16 –12 125 ∆VHGATE vs IHGATE 14 HGATE 60 100 436412 G03 GATE Pull-Up Current vs VCC –20 80 SNS = OUT = 48V 75 50 25 TEMPERATURE (°C) 0 436412 G02 436412 G01 ISNS + IOUT IN SHUTDOWN (µA) 10 2 ISRC VCC (V) 0 SHDN = 0 VCC = 12V 14 4 100 0 ICC(SHDN) vs Temperature 16 50 ICC 350 ICC(SHDN) (µA) SUPPLY CURRENT (µA) ICC(SHDN) vs VCC 60 ICC(SHDN) (µA) 450 ∆VDGATE vs VIN in Figure 1 14 14 12 12 10 10 10 9 ∆VDGATE (V) 11 ∆VHGATE (V) ∆VDGATE (V) 12 8 6 4 7 6 0 –2 –6 –4 IDGATE (µA) –8 –10 436412 G07 2 6 R4 IN FIGURE 1 0Ω 2.2k 4.7k 10k 8 4 8 12 16 VIN (V) 20 8 R4 IN FIGURE 1 0Ω 2.2k 4.7k 10k 4 24 436412 G08 2 4 8 12 16 VIN (V) 20 24 436412 G09 436412f 5 LTC4364-1/LTC4364-2 TYPICAL PERFORMANCE CHARACTERISTICS HGATE Pull-Down Current vs Temperature 175 150 125 100 75 150 125 50 25 75 0 TEMPERATURE (°C) 100 50 25 75 0 TEMPERATURE (°C) 100 10 125 –60 –200 –150 –100 –50 20 30 40 50 VCC – VOUT (V) 60 70 0 80 0 10 20 30 40 50 VCC – VOUT (V) 60 70 0 10 20 30 40 50 VCC – VOUT (V) 60 70 80 VCC = 4V 50 35 ∆VSD (mV) ∆VSD (mV) VOL (V) 0.2 60 40 1.00 30 25 20 0 OVERCURRENT CONDITION OUT = 0V 0.3 Ideal Diode Regulation Voltage vs Temperature 45 1.25 0.25 0.4 436412 G15 50 VCC = 12V 0.50 OVERVOLTAGE CONDITION OUT = 16V 0.5 0 80 Ideal Diode Regulation Voltage vs VCC 0.75 0.6 436412 G14 EN, FLT Output Low vs Current 3.5 4.0 0.1 436412 G13 1.50 3.0 0.7 RETRY DUTY CYCLE (%) ITMR(UP) (µA) –10 10 1.5 2.0 2.5 VOUT (V) 0.8 OVERCURRENT CONDITION OUT = 5V –250 TMR = 1V –20 1.0 Retry Duty Cycle vs VCC – VOUT (LTC4364-2 Only) –300 OVERVOLTAGE CONDITION OUT = 5V –50 TMR = 1V –30 0.5 436412 G12 Overcurrent TMR Current vs VCC – VOUT –40 0 436412 G11 Overvoltage TMR Current vs VCC – VOUT 0 30 20 50 –50 –25 125 40 100 436412 G10 ITMR(UP) (µA) 50 75 50 –50 –25 0 60 VSENSE – VSOURCE = 200mV VCC = 12V ∆VDGATE = 5V 175 IDGATE(DN) (mA) IHGATE(DN) (mA) 200 ∆VSNS = 100mV OR FB = 1.5V ∆VHGATE = 5V VCC = 12V Overcurrent Threshold vs OUT Voltage ∆VSNS (mV) 200 DGATE Pull-Down Current vs Temperature 40 VCC = 12V 30 20 15 0 1 2 3 CURRENT (mA) 4 5 10 4 6 8 10 12 20 40 60 80 VCC (V) 436412 G16 436412 G17 10 –50 –25 50 25 0 75 TEMPERATURE (°C) 100 125 436412 G18 436412f 6 LTC4364-1/LTC4364-2 PIN FUNCTIONS DGATE: Diode Controller Gate Drive Output. When the load current creates more than 30mV of drop across the MOSFET, the DGATE pin is pulled high by an internal charge pump current source and clamped to 12V above the SOURCE pin. When the load current is small, the DGATE pin is actively driven to maintain 30mV across the MOSFET. If reverse current develops, a 130mA fast pull-down circuit quickly connects the DGATE pin to the SOURCE pin, turning off the MOSFET. Connect to SOURCE or leave open if unused. ENOUT: Enable Output. An open-drain output that goes high impedance when the voltage at the OUT pin is above (VCC − 0.7V), indicating the external MOSFETs are fully on. The state of the pin is latched and resets when the OUT pin drops below 2.2V. The internal FET is capable of sinking up to 2mA and can withstand up to 80V. Connect to GND if unused. Exposed Pad (DE Package Only): Exposed pad may be left open or connected to device ground (GND). FB: Voltage Regulator Feedback Input. Connect this pin to the resistive divider connected between the OUT pin and ground. During an overvoltage condition, the HGATE pin is controlled to maintain 1.25V at the FB pin. Connect to GND to disable the overvoltage clamp. FLT: Fault Output. An open-drain output that pulls low after the TMR pin reaches the warning threshold of 1.25V. It indicates the pass device controlled by the HGATE pin is about to turn off because either the supply voltage has stayed at an elevated level for an extended period of time (overvoltage fault) or the device is in an overcurrent condition (overcurrent fault). The internal FET is capable of sinking up to 2mA and can withstand up to 80V. Connect to GND if unused. GND: Device Ground. HGATE: Surge Stopper Gate Drive Output. The HGATE pin is pulled up by an internal charge pump current source and clamped to 12V above the SOURCE pin. Both voltage and current amplifiers control the HGATE pin to regulate the output voltage and limit the current through the MOSFET. OUT: Output Voltage Sense Input. This pin senses the voltage at the drain of the external N-channel MOSFET connected to the DGATE pin. The voltage difference between VCC and OUT sets the fault timer current. When this difference drops below 0.7V, the ENOUT pin goes high impedance. OV: Overvoltage Comparator Input. When OV is above its threshold of 1.25V, the fault retry function is inhibited. When OV falls below its threshold, the HGATE pin is allowed to turn back on when fault conditions are cleared. At power-up, an OV voltage higher than its threshold blocks turn-on of the external N-channel MOSFET controlled by the HGATE pin (see Applications Information). Connect to GND if unused. SENSE: Current Sense Input. Connect this pin to the input side of the current sense resistor. The current limit circuit controls the HGATE pin to limit the sense voltage between the SENSE and OUT pins to 50mV if OUT is above 2.5V. When OUT drops below 1.5V, the sense voltage is reduced to 25mV for additional protection during an output short. The sense amplifier also starts a current source to charge up the TMR pin. The voltage difference between SENSE and OUT must be limited to less than 30V. Connect to OUT if unused. SHDN: Shutdown Control Input. Pulling the SHDN pin below 0.5V shuts off the LTC4364 and reduces the VCC pin current to 10μA. Pull this pin above 2.2V or disconnect it to allow the internal current source to turn the part back on. When left open, the SHDN voltage is internally clamped to 4V. The leakage current to ground at the pin should be limited to no more than 1μA if no pull-up device is used to turn the part on. The SHDN pin can be pulled up to 100V or below GND by 40V without damage. SOURCE: Common Source Input and Gate Drive Return. Connect this pin directly to the sources of the external back-to-back N-channel MOSFETs. SOURCE is the anode of the ideal diode and the voltage sensed between this pin and the SENSE pin is used to control the source-drain voltage across the N-channel MOSFET (forward voltage of the ideal diode). 436412f 7 LTC4364-1/LTC4364-2 PIN FUNCTIONS TMR: Fault Timer Input. Connect a capacitor between this pin and ground to set the times for fault warning, fault turn-off, and cool down periods. Either voltage regulation or current regulation starts pulling up the TMR pin. The current charging up this pin during the fault conditions increases with the voltage difference between VCC and OUT pins (see Applications Information). When TMR reaches 1.25V, the FLT pin pulls low to indicate the detection of a fault condition. If the condition persists, the pass device controlled by HGATE turns off when TMR reaches the threshold of 1.35V. As soon as the fault condition disappears, a cool down interval commences while the TMR pin cycles 32 times between 0.15V and 1.35V with 2μA charge and discharge currents. When TMR crosses 0.15V the 32nd time, the HGATE pin is allowed to pull high turning the pass device back on if the OV pin voltage is below its threshold for the LTC4364-2 version. The HGATE pin latches low after fault time-out for the LTC4364-1. UV: Undervoltage Comparator Input. When the UV pin falls below its 1.25V threshold, the HGATE pin is pulled down with a 1mA current. When the UV pin rises above 1.25V plus the hysteresis, the HGATE pin is pulled up by the internal charge pump. For LTC4364-1, after HGATE is latched off, pulling the UV pin below 0.6V resets the latch and allows HGATE to retry. If unused, connect to the SHDN pin. VCC: Positive Supply Voltage Input. The positive supply input ranges from 4V to 80V for normal operation. It can also be pulled below ground potential by up to 40V during a reverse battery condition, without damaging the part. Shutting down the LTC4364 by pulling the SHDN pin to ground reduces the VCC current to 10μA. 436412f 8 LTC4364-1/LTC4364-2 BLOCK DIAGRAM VCC SOURCE HGATE HGATE OFF 10µA CHARGE PUMP f = 620kHz DGATE 12V 12V SENSE DGATE OFF 20µA FD – VA – IA + – 1.25V + – + + – DA + + – + – 30mV 30mV 50mV/ 25mV OUT FB SHDN – OC ENOUT SET OV ENOUT RESET SHDN + UVIN RETRY OV – 1.35V + 0.15V VCC – CONTROL CIRCUITRY VCC – 0.7V + 1.25V + – UV – + 2.2V FLT + 32x ENOUT – + 2µA 1.25V TMR – GND 436412 BD 436412f 9 LTC4364-1/LTC4364-2 OPERATION The LTC4364 is designed to suppress high voltage surges and limit the output voltage to protect load circuitry and ensure normal operation in high availability power systems. It features an overvoltage protection regulator that drives an external N-channel MOSFET (M1) as the pass device and an ideal diode controller that drives a second external N-channel MOSFET (M2) for reverse input protection and output voltage holdup. The LTC4364 operates from a wide range of supply voltage, from 4V to 80V. With a clamp limiting the VCC supply, the input voltage may be higher than 80V. The input supply can also be pulled below ground potential by up to 40V without damaging the LTC4364. The low power supply requirement of 4V allows it to operate even during cold cranking conditions in automotive applications. Normally, the pass device M1 is fully on, supplying current to the load with very little power loss. If the input voltage surges too high, the voltage amplifier (VA) controls the gate of M1 and regulates the voltage at the OUT pin to a level that is set by an external resistive divider from the OUT pin to ground and the internal 1.25V reference. The LTC4364 also detects an overcurrent condition by monitoring the voltage across an external sense resistor placed between the SENSE and OUT pins. An active current limit circuit (IA) controls the gate of M1 to limit the sense voltage to 50mV if OUT is above 2.5V. In the case of a severe output short that brings OUT below 1.5V, the sense voltage is reduced to 25mV to reduce the stress on M1. During an overvoltage or overcurrent event, a current source starts charging up the capacitor connected at the TMR pin to ground. The pull-up current source in overcurrent condition is 5 times of that in overvoltage to accelerate turn-off. When TMR reaches 1.25V, the FLT pin pulls low to warn of impending turn-off. The pass device M1 stays on and the TMR pin is further charged up until it reaches 1.35V, at which point the HGATE pin pulls low and turns off M1. The fault timer allows the load to continue functioning during brief transient events while protecting the MOSFET from being damaged by a long period of input overvoltage, such as load dump in vehicles. The fault timer period decreases with the voltage across the MOSFET, to help keep the MOSFET within its safe operating area (SOA). The LTC4364-1 latches off M1 and keeps FLT low after a fault timeout. The LTC4364-2 allows M1 to turn back on and FLT to go high impedance after a cool down timer cycle, provided the OV pin is below its threshold. After the HGATE pin is latched low following fault, momentarily pulling the SHDN pin below 0.5V resets the fault and allows HGATE to pull high for both LTC4364-1 and LTC4364‑2. In addition, momentarily pulling the UV pin below 0.6V allows HGATE to pull high after the cool down timer delay for LTC4364-1, but has no effect on LTC4364‑2. The source and drain of MOSFET M2 serve as the anode and cathode of the ideal diode. The LTC4364 controls the DGATE pin to maintain a 30mV forward voltage across the drain and source terminals of M2. It reduces the power dissipation and increases the available supply voltage to the load, as compared to using a discrete blocking diode. If M2 is driven fully on and the load current results in more than 30mV of forward voltage, the forward voltage is equal to RDS(ON) • ILOAD. In the event of an input short or a power supply failure, reverse current temporarily flows through the MOSFET M2 that is on. If the reverse voltage exceeds –30mV, the LTC4364 pulls the DGATE pin low strongly and turns off M2, minimizing the disturbance at the output. If the input supply drops below the GND pin voltage, the DGATE pin is pulled to the SOURCE pin voltage, keeping M2 off. When the HGATE pin pulls low in any fault condition, the DGATE pin also pulls low, so both pass devices are turned off. If the output (and so the SOURCE pin, through the body diode of M2) drops below GND, the HGATE pin is pulled to the SOURCE pin voltage, turning M1 off and shutting down the forward current path. An input undervoltage condition is accurately detected using the UV pin. The HGATE and DGATE pins remain low if UV is below its 1.25V threshold. The SHDN pin not only turns off the pass devices but also shuts down the internal circuitry, reducing the supply current to 10µA. 436412f 10 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION Some power systems must cope with high voltage surges of short duration such as those in automobiles. Load circuitry must be protected from these transients, yet critical systems may need to continue operating during these events. If the voltage regulation loop is engaged for longer than the timeout period, set by the timer capacitor, an overvoltage fault is detected. The HGATE pin is pulled down to the SOURCE pin by a 130mA current, turning M1 off. This prevents M1 from being damaged during a long period of overvoltage, such as during load dump in automobiles. After the fault condition has disappeared and a cool down period has transpired, the HGATE pin starts to pull high again (LTC4364-2). The LTC4364-1 latches the HGATE pin low after an overvoltage fault timeout and can be reset using the SHDN or UV pin (see Resetting Faults). The LTC4364 drives an N-channel MOSFET (M1) at the HGATE pin to limit the voltage and current to the load circuitry during supply transients or overcurrent events. The selection of M1 is critical for this application. It must stay on and provide a low impedance path from the input supply to the load during normal operation and then dissipate power during overvoltage or overcurrent conditions. The LTC4364 also drives a second N-channel MOSFET (M2) at the DGATE pin as an ideal diode to protect the load from damage during reverse polarity input conditions, and to block reverse current flow in the event the input collapses. A typical application circuit using the LTC4364 to regulate the output at 27V during input surges with reverse input protection is shown in Figure 1. Overcurrent Fault The LTC4364 features an adjustable current limit that protects against short circuits and excessive load current. During an overcurrent event, the HGATE pin is regulated to limit the current sense voltage across the SENSE and OUT pins (∆VSNS) to 50mV when OUT is above 2.5V. The current limit sense voltage is reduced to 25mV when OUT is below 1.5V for additional protection during an output short. Overvoltage Fault A current sense resistor is placed between SENSE and OUT and its value (RSNS) is determined by: The LTC4364 limits the voltage at the OUT pin during an overvoltage situation. An internal voltage amplifier regulates the HGATE pin voltage to maintain 1.25V at the FB pin. During this period of time, the N-channel MOSFET M1 remains on and supplies current to the load. This allows uninterrupted operation during brief overvoltage transient events. MAX DC: 100V/–24V VIN MAX 1ms 12V TRANSIENT: 200V RSNS = where ILIM is the desired current limit. M1 FDB33N25 D4 SMAJ24A D3 1.5KE200A R1 383k 1% R2 90.9k 1% R3 10k 1% R4 2.2k 0.5W C1 0.1µF M2 FDB3682 UV = 6V OV = 60V RSNS 10mΩ + R5 10Ω R6 100Ω D5 1N4148W D1 CMZ5945B 68V ∆VSNS ILIM VCC HGATE SHDN CHG 0.1µF SOURCE DGATE SENSE UV OUT FB LTC4364 R7 102k 1% R8 4.99k 1% ENOUT OV GND ENABLE FAULT FLT TMR VOUT 4A CLAMPED AT 27V COUT 22µF 436412 F01 CTMR 47nF Figure 1. 4A, 12V Overvoltage Output Regulator with Reverse Current Protection 436412f 11 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION An overcurrent fault occurs when the current limit circuitry has been engaged for longer than the timeout delay set by the timer capacitor. The HGATE pin is then immediately pulled low by 130mA to the SOURCE pin, turning off the MOSFET M1. After the fault condition has disappeared and a cool down period has transpired, the HGATE pin is allowed to pull back up and turn on the pass device (LTC4364-2). The LTC4364-1 latches the HGATE pin low after the overcurrent fault timeout and can be reset using the SHDN or UV pin (see Resetting Faults). Input Overvoltage Comparator Input overvoltage is detected with the OV pin and an external resistive divider connected to the input (Figure 1). At power-up, if the OV pin voltage is higher than its 1.25V threshold before the 100μs internal power-on-reset expires, or before the input undervoltage condition is cleared at the UV pin, the HGATE pin will be held low until the OV pin voltage drops below its threshold. To prevent start-up in the event the board is hot swapped into an overvoltage supply, separate resistive dividers with filtering capacitors can be used for the OV and UV pins (Figure 2). The RC constants should be skewed so that τUV/τOV > 50. In Figure 2, If the board is plugged into a supply that is higher than 60V, the LTC4364 will not turn on the pass devices until the supply voltage drops below 60V. Once the HGATE pin begins pulling high, an input overvoltage condition detected by OV will not turn off the pass device. Instead, OV prevents the LTC4364 from restarting following a fault (see Cool Down Period and Restart). This prevents the pass device from cycling between ON and OFF states when the input voltage stays at an elevated level for a long period of time, reducing the stress on the MOSFET. VIN 383k 475k UV = 6V 10nF UV 100k 1nF OV 10k The LTC4364 detects input undervoltage conditions such as low battery using the UV pin. When the voltage at the UV pin is below its 1.25V threshold, the HGATE pin pulls low to keep the pass device off. Once the UV pin voltage rises above the UV threshold plus the UV hysteresis (50mV typical), the HGATE pin is allowed to pull up without going through a timer cycle. In Figure 1 and Figure 2, the input UV threshold is set by the resistive dividers to 6V. An undervoltage condition does not produce an output at the FLT pin. Fault Timer The LTC4364 includes an adjustable fault timer. Connecting a capacitor from the TMR pin to ground sets the delay period before the MOSFET M1 is turned off during an overvoltage or overcurrent fault condition. The same capacitor also sets the cool down period before M1 is allowed to turn back on after the fault condition has disappeared. Once a fault condition is detected, a current source charges up the TMR pin. The current level varies depending on the voltage drop across the VCC pin and the OUT pin, corresponding to the MOSFET VDS. The on time is inversely proportional to the voltage drop across the MOSFET. This scheme therefore takes better advantage of the available safe operating area (SOA) of the MOSFET than would a fixed timer current. The timer current starts at around 2μA with 0.5V or less of VCC – VOUT, increasing linearly to 50μA with 75V of VCC – VOUT during an overvoltage fault (Figure 3a): ITMR(UP)OV = 2μA + 0.644[μA/V] • (VCC – VOUT – 0.5V) During an overcurrent fault, the timer current starts at 10μA with 0.5V or less of VCC – VOUT and increases to 260μA with 75V of VCC – VOUT (Figure 3b): ITMR(UP)OC = 10μA + 3.36[μA/V] • (VCC – VOUT – 0.5V) LTC4364 0V = 60V Input Undervoltage Comparator 436412 F02 τUV = (383k||100k) • 10nF τOV = (475k||10k) •1nF This arrangement allows the pass device to turn off faster during an overcurrent event, since more power is dissipated under this condition. Refer to the Typical Performance Characteristics section for the timer current at different VCC – VOUT in both overvoltage and overcurrent events. Figure 2. External UV and OV Configuration Blocks Start-Up Into an Overvoltage Condition 436412f 12 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION since it would lengthen the overall fault timer period and cause more stress on the power transistor during an overcurrent event. VTMR (V) ITMR = 5µA 1.35 ITMR = 5µA 1.25 VCC – VOUT = 75V (ITMR = 50µA) VCC – VOUT 0 = 75V Assuming VCC – VOUT remains constant, the on-time of HGATE during an overvoltage fault is: VCC – VOUT = 10V (ITMR = 8µA) TIME tFLT 25ms/µF tWARNING 20ms/µF tFLT 156ms/µF =10V CTMR •1.25V CTMR •100mV + ITMR(UP)OV 5µV and that during an overcurrent fault is: tWARNING 20ms/µF (3a) Overvoltage Fault Timer Current VTMR (V) tOC = CTMR •1.35V ITRM(UP)OC If the fault condition disappears after TMR reaches 1.25V but is lower than 1.35V, the TMR pin is discharged by 2μA. When TMR drops to 0.15V, the FLT pin resets to a high impedance state. 1.35 1.25 VCC – VOUT = 75V (ITMR = 260µA) tOV = VCC – VOUT = 10V (ITMR = 42µA) Cool Down Period and Restart 0 VCC – VOUT = 75V =10V tFLT 4.8ms/µF TIME tWARNING 0.38ms/µF tFLT 29.8ms/µF tWARNING 2.38ms/µF 436412 F03 (3b) Overcurrent Fault Timer Current Figure 3. Fault Timer Current of the LTC4364 When the voltage at the TMR pin, VTMR, reaches 1.25V, the FLT pin pulls low to indicate the detection of a fault condition and provide warning of the impending power loss. In the case of an overvoltage fault, the timer current then switches to a fixed 5μA. The interval between FLT asserting low and the MOSFET M1 turning off is given by: t WARNING = CTMR • 100mV 5µA This constant early warning period allows the load to perform necessary backup or housekeeping functions before the supply is cut off. After VTMR crosses the 1.35V threshold, the pass device M1 turns off immediately. Note that during an overcurrent event, the timer current is not reduced to 5μA after VTMR has reached 1.25V threshold, As soon as TMR reaches 1.35V and HGATE pulls low in a fault condition, the TMR pin starts discharging with a 2μA current. When the TMR pin voltage drops to 0.15V, TMR charges with 2μA. When TMR reaches 1.35V, it starts discharging again with 2μA. This pattern repeats 32 times to form a long cool down timer period before retry (Figure 4). At the end of the cool down period (when the TMR pin voltage drops to 0.15V the 32nd time), the voltage at the OV pin is checked. If the OV voltage is above its 1.25V threshold, retry is inhibited and the HGATE pin remains low. If the OV pin voltage is below 1.25V minus the OV hysteresis, the LTC4364-2 retries, pulling the HGATE pin up and turning on the pass device M1. The FLT pin will then go to a high impedance state. The total cool down timer period is given by: tCOOL = 63 • CTMR • 1.2V 2µA The latch-off version, LTC4364-1, latches the HGATE and FLT pins low after a fault timeout. It also generates the cool down TMR pulses as shown in Figure 4, but does not retry after the cool down period. There are two ways to restart the part. The first method is to pull the UV pin below 0.6V momentarily (>10μs) after the cool down timer 436412f 13 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION period. If the UV reset pulse is asserted during the cool down period, the TMR pulses are unaffected and the part restarts after the cool down period ends. If OV is higher than 1.25V while UV reset pulse is applied, the part will not restart until OV drops below 1.25V even if the cool down period ends. reverse input protection with minimum voltage drop in normal operation. In the event of an input short or a power supply brownout, reverse current may temporarily flow through M2. The LTC4364 detects this reverse current and immediately pulls the DGATE pin to the SOURCE pin, turning off M2. This minimizes discharge of the output reservoir capacitor and holds up the output voltage. In the case where the input supply drops below ground, the SOURCE pin is pulled below ground through the body diode of M1. The LTC4364 responds to this condition by shorting the DGATE pin to the SOURCE pin, keeping M2 off. The second method of restarting the LTC4364-1 is to pulse the SHDN pin low for more than 200μs. If this is applied during the cool down period, the cool down timer is reset with 1mA quickly discharging the TMR pin, and the part will restart when TMR drops below 0.15V. If the SHDN reset pulse is applied after the cool down period, the part restarts immediately. Sufficient cool down time should be allowed before toggling the SHDN pin to prevent overstressing the pass device. MOSFET Selection The LTC4364 drives two N-channel MOSFETs, M1 and M2, as the pass devices to conduct the load current (Figure 1). The important features are on-resistance, RDS(ON), the maximum drain-source voltage, V(BR)DSS, the threshold voltage, and the safe operating area, SOA. A UV reset pulse has no effect on the operation of the LTC4364-2. However, if a SHDN reset pulse as described above is asserted in the middle of the cool down period, the TMR pin quickly discharges with 1mA and the LTC4364-2 is allowed to restart once TMR drops below 0.15V. The OV pin gates the restart of either LTC4364-1 or LTC4364-2 with a SHDN reset pulse. The part will not restart until OV drops below 1.25V. The maximum drain-source voltage rating must be higher than the maximum input voltage. If the output is shorted to ground or in an overvoltage event, the full supply voltage will appear across M1. If the input is shorted to ground, M2 will be stressed by the voltage held up at the output. The gate drive for both MOSFETs is guaranteed to be more than 10V and less than 16V for those applications with VCC higher than 8V. This allows the use of standard threshold voltage N-channel MOSFETs. For systems with VCC less than 8V, a logic-level MOSFET is required since the gate drive can be as low as 5V. For supplies of 24V or higher, a 15V Zener diode is recommended to be placed between Reverse Input Protection The LTC4364 can withstand reverse voltage without damage. The VCC, SHDN, UV, OV, HGATE, SOURCE and DGATE pins can all withstand up to –40V with respect to GND. The LTC4364 controls a second N-channel MOSFET (M2) as an ideal diode to replace an in-line blocking diode for 1.25V <1.25V FB TMR OV < 1.25V CHECKED 1.35V 1.25V 1st 2nd 31st 0.15V 32nd FLT ∆VHGATE COOL DOWN PERIOD 436412 F04 Figure 4. Auto-Retry Cool Down Timer Cycle Following an Overvoltage Fault (LTC4364-2 Only) 436412f 14 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION gate and source of each MOSFET for extra protection (Figures 8 to 10). Transient Stress in the MOSFET The SOA of the MOSFET must encompass all fault conditions. In normal operation the pass devices are fully on, dissipating very little power. But during either overvoltage or overcurrent faults, the HGATE pin is controlled to regulate either the output voltage or the current through MOSFET M1. Large current and high voltage drop across M1 can coexist in these cases. The SOA curves of the MOSFET must be considered carefully along with the selection of the fault timer capacitor. During an overvoltage event, the LTC4364 drives the pass MOSFET M1 to regulate the output voltage at an acceptable level. The load circuitry may continue operating throughout this interval, but only at the expense of dissipation in the MOSFET pass device. MOSFET dissipation or stress is a function of the input voltage waveform, regulation voltage and load current. The MOSFET must be sized to survive this stress. Most transient event specifications use the model shown in Figure 5. The idealized waveform comprises a linear ramp of rise time tr, reaching a peak voltage of VPK and exponentially decaying back to VIN with a time constant of τ. A typical automotive transient specification has constants of tr = 10μs, VPK = 80V and τ = 1ms. A surge condition known as “load dump” has constants of tr = 5ms, VPK = 60V and τ = 200ms. MOSFET stress is the result of power dissipated within the device. For long duration surges of 100ms or more, stress is increasingly dominated by heat transfer; this is a matter of device packaging and mounting, and heat sink thermal mass. This is analyzed by simulation, using the MOSFET’s thermal model. For short duration transients of less than 100ms, MOSFET survival is increasingly a matter of SOA, an intrinsic property of the MOSFET. SOA quantifies the time required at any given condition of VDS and ID to raise the junction temperature of the MOSFET to its rated maximum. MOSFET SOA is expressed in units of watt-squared-seconds (P2t), which is an integral of P(t)2dt over the duration of the transient. This figure is essentially constant for intervals of less than 100ms for any given device type, and rises to infinity under DC operating conditions. Destruction mechanisms other than bulk die temperature distort the lines of an accurately drawn SOA graph so that P2t is not the same for all combinations of ID and VDS. In particular P2t tends to degrade as VDS approaches the maximum rating, rendering some devices useless for absorbing energy above a certain voltage. Calculating Transient Stress To select a MOSFET suitable for any given application, the SOA stress of M1 must be calculated for each input transient which shall not interrupt operation. It is then a simple matter to choose a device which has adequate SOA to survive the maximum calculated stress. P2t for a prototypical transient waveform is calculated as follows (Figure 6). Let: a = VREG – VIN b = VPK – VIN where VIN = Nominal Input Voltage. VPK = 80V VPK τ = 1ms τ VREG = 16V VIN = 12V VIN tr Figure 5. Prototypical Transient Waveform tr = 10µs 436412 F06 436412 F05 Figure 6. Safe Operating Area Required to Survive Prototypical Transient Waveform 436412f 15 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION Then: 1 ( b − a )3 1 b P 2 t =ILOAD2 tr + τ 2a 2In + 3a 2 + b2 – 4ab 2 a b 3 Typically VREG ≈ VIN and τ >> tr simplifying the above to: 1 2 P 2 t = ILOAD2 ( VPK − VREG ) τ 2 For the transient conditions of VPK = 80V, VIN = 12V, VREG = 16V, tr = 10μs and τ = 1ms, and a load current of 3A, P2t is 18.4W2s—easily handled by a MOSFET in a D-pak package. The P2t of other transient waveshapes is evaluated by integrating the square of MOSFET power versus time. LTSpice™ can be used to simulate timer behavior for more complex transients and cases where overvoltage and overcurrent faults coexist. SOA stress of M1 must also be calculated for output shortcircuit conditions. Short-circuit P2t is given by: 2 ∆V P t = VIN • SNS • tOC R 2 SNS where ∆VSNS is the overcurrent fault threshold and tOC is the overcurrent timer interval. For VIN = 15V, OUT = 0V, ∆VSNS = 25mV, RSNS = 12mΩ and CTMR = 100nF, P2t is 2.2W2s—less than the transient SOA calculated in the previous example. Nevertheless, to account for circuit tolerances this figure should be doubled to 4.4W2s. Limiting Inrush Current and HGATE Pin Compensation The LTC4364 limits the inrush current to any load capacitance by controlling the HGATE pin voltage slew rate. An external capacitor, CHG, can be connected from HGATE to ground to slow down the inrush current further at the expense of slower turn-off time. The gate capacitor is set at: CHG = IHGATE(UP) IINRUSH The added gate capacitor slows down the turn-off time during fault conditions and allows higher peak currents to build up during an output short event. If this is a concern, an extra resistor, R6, in series with CHG can restore the turn-off time. A diode, D5, should be placed across R6 with the cathode connected to CHG as shown in Figure 1. In a fast transient input step, D5 provides a bypass path to CHG for the benefit of holding HGATE low and preventing self enhancement. Shutdown Short-Circuit Stress where IHGATE(UP) is the HGATE pin pull-up current, IINRUSH is the desired inrush current, CL is total load capacitance at the output. In typical applications, a CHG of 6.8nF is recommended for loop compensation during overvoltage and overcurrent events. With input voltage steps faster than 5V/μs, a larger gate capacitor helps prevent self enhancement of the N-channel MOSFET. • CL The LTC4364 can be shut down to a low current mode by pulling SHDN below 0.5V. The quiescent VCC current drops to 10μA for both the LTC4364-1 and the LTC4364-2. The SHDN pin can be pulled up to 100V or below GND by up to 40V without damage. Leaving the pin open allows an internal current source to pull it up to about 4V and turn the part on. The leakage current at the pin should be limited to no more than 1μA if no pull-up device is used to help turn it on. Supply Transient Protection The LTC4364 is tested to operate to 80V and guaranteed to be safe from damage between 100V and −40V. Voltage transients above 100V or below −40V may cause permanent damage. During a short-circuit condition, the large change in current flowing through power supply traces coupled with parasitic inductances from associated wiring can cause destructive voltage transients in both positive and negative directions at the VCC, SOURCE, and OUT pins. To reduce the voltage transients, minimize the power trace parasitic inductance by using short, wide traces. A small RC filter (R4 and C1 in Figure 1) at the VCC pin filters high voltage spikes of short pulse width. 436412f 16 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION Another way to limit supply transients above 100V at the VCC pin is to use a Zener diode and a resistor, D1 and R4, as shown in Figure 1. D1 clamps voltage spikes at the VCC pin while R4 limits the current through D1 to a safe level during the surge. In the negative direction, D1 along with R4 clamps the VCC pin near GND. The inclusion of R4 in series with the VCC pin increases the minimum required supply voltage due to the extra voltage drop across the resistor, which is determined by the supply current of the LTC4364 and the leakage current of D1. 2.2k adds about 1V to the minimum operating voltage. Output Port Protection For sustained, elevated suppy voltages, the power dissipation of R4 becomes unacceptable. This can be resolved by using an external NPN transistor (Q1 in Figure 7) as a buffer. To protect Q1 against supply reversal, block the collector of Q1 with a series diode or tie it to the cathode of D3 and D4 in Figure 1. Design Example Transient suppressor D3 in Figure 1 clamps the input voltage to 200V for voltage transients higher than 200V, to prevent breakdown of M1. It also blocks forward conduction in D4. D4 limits the SOURCE pin voltage to 24V below GND when the input goes negative. COUT helps absorb the inductive energy at the output upon a sudden input short, protecting the OUT and SENSE pins. VIN 200V C1 100nF R4 22k 1/4W D1 CMZ5945B 68V In applications where the output is on a connector, as shown in Figure 14, if the output is plugged into a supply that is higher than the input, the ideal diode MOSFET, M2, turns off to open the backfeeding path. In the case where the output port is plugged into a supply that is below GND, the SOURCE pin is pulled below GND through the body diode of M2. The LTC4364 responds to this condition by shorting the HGATE pin to the SOURCE pin, turning M1 off and shutting down the current path from VIN to VOUT. As a design example, consider an application with the following specifications: VIN = 8V to 14V DC with a peak transient of 200V and decay time constant τ of 1ms, VOUT ≤ 27V, minimum current limit ILIM(MIN) at 4A, low-battery detection at 6V, input overvoltage level at 60V, and 1ms of overvoltage early warning (Figure 1). Selection of CMZ5945B for D1 will limit the voltage at the VCC pin to less than 71V during the 200V surge. The minimum required voltage at the VCC pin is 4V when VIN is at 6V; the maximum supply current for LTC4364 is 750μA. The maximum value for R4 to ensure proper operation is: Q1 PZTA42 VCC LTC4364 R4 = 6V – 4V = 2.7k 0.75mA Select 2.2k for R4 to accommodate all conditions. With the minimum Zener voltage at 64V, the peak current through R4 into D1 is then calculated as: GND 436412 F07 Figure 7. Buffering VCC to Extend Input Supply Range Output Bypassing The OUT and SENSE pins can withstand up to 100V above and 20V below GND. In all applications the output must be bypassed with at least 22μF low ESR electrolytic (COUT in Figure 1) to stabilize the voltage and current limiting loops, and to minimize capacitive feedthrough of input transients. Total ceramic bypassing of up to one-tenth the total electrolytic capacitance is permissible without compromising performance. ID1(PK) = 200V – 64V = 62mA 2.2k which can be handled by the CMZ5945B with a peak power rating of 200W at 10/1000μs. With a bypass capacitance of 0.1μF (C1), along with R4 of 2.2k, high voltage transients up to 250V with a pulse width less than 20μs are filtered out at the VCC pin. Next, calculate the resistive divider value to limit VOUT to 27V during an overvoltage event: VREG = 1.25V • (R7 +R8 ) = 27V R8 436412f 17 LTC4364-1/LTC4364-2 APPLICATIONS INFORMATION Choosing 250μA for the resistive divider: R8 = 1.25V = 5k 250µA P= (27V – 1.25V ) •R8 = 102.8k 1.25V The closest standard value for R7 is 102k. Now, calculate the sense resistor, RSNS, value: RSNS = ∆VSNS(MIN) ILIM = 45mV = 11mΩ 4A Choose 10mΩ for RSNS. CTMR is then chosen for 1ms of early warning time: 1ms• 5µA CTMR = = 50nF 100mV The closest standard value for CTMR is 47nF. Finally, calculate R1, R2 and R3 for 6V low battery detection and 60V input overvoltage level: 1.25V 6V = R1+R2 +R3 R2 +R3 Simplify the equations and choose 10k for R3 to get: 60V R2 = – 1 •R3 = 9 •R3 = 90k 6V 6V – 1 • (R2+R3) = 3.8 • (R1+R2) = 380k R1= 1.25V Select 90.9kΩ for R2 and 383kΩ for R1. The pass device, M1, should be chosen to withstand an output short condition with VCC = 14V. In the case of a severe output short where VOUT = 0V, ITMR(UP) = 55μA and the total overcurrent fault time is: 18 CTMR • VTMR(G) ITRM(UP) RSNS = 47nF • 1.35V = 1.15ms 55µA = 14V • 32mV = 45W 10mΩ The corresponding P2t is 2.3W2s. During an output overload or soft short, the voltage at the OUT pin could stay at 2V or higher. The total overcurrent fault time when VOUT = 2V is: tOC = 47nF •1.35V = 1.3ms 49µA The maximum power dissipation in M1 is: P= (14V – 2V ) • 55mV = 66W 10mΩ The corresponding P2t is 5.7W2s. Both of the above conditions are well within the safe operating area of FDB33N25. To select the pass device, M2, first calculate RDS(ON) to achieve the desired forward drop VFW at maximum load current (5.5A). If VFW = 0.25V: 1.25V 60V = R1+R2 +R3 R3 tOC = ∆VDS(M1) • ∆VSNS(MAX) Select 4.99k for R8. R7 = The maximum power dissipation in M1 is: RDS(ON) ≤ VFW ILOAD(MAX) = 0.25V = 45.5mΩ 5.5A The FDB3682 offers a maximum RDS(ON) of 36mΩ at VGS = 10V so is a good fit. Its minimum BVDSS of 100V is also sufficient to handle VOUT transients up to 100V during an input short-circuit event. Layout Considerations To achieve accurate current sensing, use Kelvin connections to the current sense resistor, RSNS. Limit the resistance from the SOURCE pin to the sources of the MOSFETs to below 10Ω. The minimum trace width for 1oz copper foil is 0.02" per amp to ensure the trace stays at a reasonable temperature. Note that 1oz copper exhibits a sheet resistance of about 530μΩ/square. Small resistances can cause large errors in high current applications. Noise immunity will be improved significantly by locating resistive dividers close to the pins with short VCC and GND traces. 436412f LTC4364-1/LTC4364-2 TYPICAL APPLICATIONS + OV 36V HGATE VCC SHDN R1 118k SOURCE DGATE SENSE UV R2 44.2k VOUT 2A OUT FB LTC4364 ENOUT OV R3 5.9k CLOAD 100µF R5 10Ω D6 DDZ9702T CHG 47nF D1 SMAT70A UV 4.2V RSNS 20mΩ M1 SUD50N03-9 VIN 5V TO 28V GND FLT TMR 436412 F08 CTMR 0.22µF Figure 8. 2A Wide Range Hot Swap Controller with Circuit Breaker M1 FDB3632 VIN 18V TO 33V OV 45V VOUT 2.5A CLAMPED CLOAD AT 36V 100µF + CHG 47nF UV 15V RSNS 15mΩ M2 FDMS86101 R1 100k R2 6.04k R3 3.01k VCC SHDN R5 10Ω D7 DDZ9702T D6 DDZ9702T HGATE SOURCE UV DGATE SENSE R7 110k OUT FB R8 4.02k LTC4364 ENOUT OV GND FLT TMR 436412 F09 CTMR 0.1µF Figure 9. 28V Hot Swap with Overvoltage Output Regulation at 27V, Circuit Breaker, and Reverse Current Protection M1 FDB33N25 VIN 36V TO 72V UV 36V OV 76V R2 3.92k RSNS 10mΩ + R4 2.2k CHG 47nF D1 CMZ5945B 68V R1 205k M2 FDB3632 VCC SHDN R5 10Ω D6 DDZ9702T HGATE UV D7 DDZ9702T SOURCE DGATE SENSE OUT FB LTC4364 R7 226k R8 4.02k ENOUT OV R3 3.48k VOUT 4A CLAMPED CLOAD AT 72V 330µF GND FLT TMR 436412 F10 CTMR 0.1µF Figure 10. 48V Hot Swap with Overvoltage Output Regulation at 72V, Circuit Breaker, and Reverse Current Protection 436412f 19 LTC4364-1/LTC4364-2 TYPICAL APPLICATIONS M1A FDD16AN08A0 VINA 12V M2A FDD16AN08A0 RSNSA 10mΩ + CHGA 6.8nF HGATE SOURCE DGATE SENSE VCC SHDN UV R8A 4.99k ENOUT TMR FLT GND M1B FDD16AN08A0 VINB 12V VCC M2B FDD16AN08A0 RSNSB 10mΩ + CHGB 6.8nF COUTB 22µF R5B 10Ω HGATE SOURCE DGATE SENSE SHDN UV OUT FB LTC4364 OV R7B 59k R8B 4.99k ENOUT TMR CTMRB 0.22µF R7A 59k OUT FB LTC4364 OV CTMRA 0.22µF COUTA 22µF R5A 10Ω VOUT CLAMPED AT 16V FLT GND 436412 F11 Figure 11. Redundant Supply Diode-OR with Overvoltage Surge Protection M1 FDB3632 VIN 12V M2 FDMS86101 VOUT CLOAD 100k SHDN SHDN M3 VN2222 VCC HGATE SOURCE DGATE SENSE OUT FB UV LTC4364 ENOUT OV TMR GND FLT 436412 F12 Figure 12. High Side Switch with Ideal Diode for Load Protection 436412f 20 LTC4364-1/LTC4364-2 TYPICAL APPLICATIONS R9 1k, 1W M1 FDD16AN08A0 VIN 12V UV 6V OV 30V VCC SHDN R1 191k + R4 2.2k CHG 6.8nF D1 CMZ5945B 68V R5 10Ω HGATE SOURCE DGATE SENSE UV R2 40.2k RSNS M2 FDD16AN08A0 10mΩ VOUT 4A CLAMPED D8 1N4746A AT 16V 18V, 1W COUT 22µF R7 287k OUT FB R8 24.9k LTC4364 ENOUT OV R3 10k GND FLT TMR 436412 F13 CTMR 0.1µF Figure 13. Overvoltage Regulator with Output Keep Alive During Shutdown PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. DE Package 14-Lead Plastic DFN (4mm × 3mm) (Reference LTC DWG # 05-08-1708 Rev B) 4.00 ±0.10 (2 SIDES) R = 0.05 TYP 0.70 ±0.05 3.60 ±0.05 2.20 ±0.05 3.30 ±0.05 PACKAGE OUTLINE PIN 1 TOP MARK (SEE NOTE 6) 1.70 ± 0.05 0.25 ± 0.05 0.50 BSC 0.200 REF 3.00 ±0.10 (2 SIDES) 0.75 ±0.05 8 0.40 ± 0.10 14 3.30 ±0.10 1.70 ± 0.10 PIN 1 NOTCH R = 0.20 OR 0.35 × 45° CHAMFER (DE14) DFN 0806 REV B 7 1 0.25 ± 0.05 0.50 BSC 3.00 REF 3.00 REF RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED R = 0.115 TYP 0.00 – 0.05 BOTTOM VIEW—EXPOSED PAD NOTE: 1. DRAWING PROPOSED TO BE MADE VARIATION OF VERSION (WGED-3) IN JEDEC PACKAGE OUTLINE MO-229 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 436412f 21 LTC4364-1/LTC4364-2 PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. MS Package 16-Lead Plastic MSOP (Reference LTC DWG # 05-08-1669 Rev Ø) 0.889 ± 0.127 (.035 ± .005) 5.23 (.206) MIN 3.20 – 3.45 (.126 – .136) 4.039 ± 0.102 (.159 ± .004) (NOTE 3) 0.50 (.0197) BSC 0.305 ± 0.038 (.0120 ± .0015) TYP RECOMMENDED SOLDER PAD LAYOUT 0.254 (.010) DETAIL “A” 3.00 ± 0.102 (.118 ± .004) (NOTE 4) 4.90 ± 0.152 (.193 ± .006) 0° – 6° TYP 0.280 ± 0.076 (.011 ± .003) REF 16151413121110 9 GAUGE PLANE 0.53 ± 0.152 (.021 ± .006) DETAIL “A” 0.18 (.007) SEATING PLANE 1.10 (.043) MAX 0.17 – 0.27 (.007 – .011) TYP 1234567 8 0.50 (.0197) BSC NOTE: 1. DIMENSIONS IN MILLIMETER/(INCH) 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 0.86 (.034) REF 0.1016 ± 0.0508 (.004 ± .002) MSOP (MS16) 1107 REV Ø 436412f 22 LTC4364-1/LTC4364-2 PACKAGE DESCRIPTION Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings. S Package 16-Lead Plastic Small Outline (Narrow .150 Inch) (Reference LTC DWG # 05-08-1610 Rev G) .386 – .394 (9.804 – 10.008) NOTE 3 .045 ±.005 .050 BSC 16 N 14 13 12 11 10 9 N .245 MIN .160 ±.005 .150 – .157 (3.810 – 3.988) NOTE 3 .228 – .244 (5.791 – 6.197) 1 .030 ±.005 TYP 15 2 3 N/2 N/2 RECOMMENDED SOLDER PAD LAYOUT .010 – .020 × 45° (0.254 – 0.508) .008 – .010 (0.203 – 0.254) 1 2 3 4 5 6 .053 – .069 (1.346 – 1.752) NOTE: 1. DIMENSIONS IN .014 – .019 (0.355 – 0.483) TYP 8 .004 – .010 (0.101 – 0.254) 0° – 8° TYP .016 – .050 (0.406 – 1.270) 7 .050 (1.270) BSC S16 REV G 0212 INCHES (MILLIMETERS) 2. DRAWING NOT TO SCALE 3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm) 4. PIN 1 CAN BE BEVEL EDGE OR A DIMPLE 436412f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 23 LTC4364-1/LTC4364-2 TYPICAL APPLICATION M1 FDB3632 VIN 12V CIN 10µF UV 6V OV 60V R1 383k 1% R2 90.9k 1% R3 10k 1% CHG 6.8nF VCC SHDN M2 FDMS86101 RSNS 0.2Ω R7 49.9k 1% R5 10Ω HGATE SOURCE DGATE SENSE UV OUT FB LTC4364 R9 16.9k 1% 10µF 50V CER D2 DDZ9702T 15V 10µF 50V CER VOUT* CLAMPED AT 18V RESR 100mΩ R8 4.99k 1% ENOUT OV GND FLT TMR 0.1µF 436412 F14 *PROTECTED AGAINST BACKFEEDING OR FORWARD CONDUCTING FROM –20V TO 50V Figure 14. 0.25A, 12V Surge Stopper with Output Port Protection RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT 4356-1/LT4356-2 Surge Stopper LT4356-3 LT4356-1: 7A Shutdown Mode LT4356-2: Auxiliary Amplifier Alive in Shutdown Mode LT4356-3: Fault Latchoff LTC4363 High Voltage Surge Stopper 4V to 80V, VCC Clamp, Adjustable Output Voltage Clamp, 60V Reverse Input Protection, Overcurrent Protection LTC4366 Floating Surge Stopper 9V to >500V Operation, Adjustable Output Voltage Clamp LTC4357 Positive High Voltage Ideal Diode Controller 0.5µs Turn-Off Time, 9V to 80V LTC4359 Ideal Diode Controller with Reverse Input Protection 4V to 80V Operation, –40V Reverse-Input Protection, Low 13µA Shutdown Current LTC4352 Ideal MOSFET ORing Diode External N-Channel MOSFETs Replace ORing Diodes, 0V to 18V LTC4354 Negative Voltage Diode-OR Controller Controls Two N-Channel MOSFETs, 1µs Turn-Off, 80V Operation LTC4355 Positive Voltage Diode-OR Controller Controls Two N-Channel MOSFETs, 0.5µs Turn-Off, 80V Operation LTC4365 Window Passer - OV, UV and Reverse Supply Protection Controller 2.5V to 34V Operation, Protects 60V to –40V ® 436412f 24 Linear Technology Corporation LT 0712 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2012