HCS573MS Radiation Hardened Octal Transparent Latch, Three-State September 1995 Features • • • • • • • • • • • • • Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 0.3 VCC Max - VIH = 0.7 VCC Min Input Current Levels Ii ≤ 5µA at VOL, VOH The HCS573MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. 1 D0 2 19 Q0 D1 3 18 Q1 D2 4 17 Q2 D3 5 16 Q3 D4 6 15 Q4 D5 7 14 Q5 D6 8 13 Q6 D7 9 12 Q7 GND 10 11 LE 20 VCC 20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH C TOP VIEW Description The Intersil HCS573MS is a Radiation Hardened octal transparent three-state latch with an active low output enable. The HCS573MS utilizes advanced CMOS/SOS technology. The outputs are transparent to the inputs when the Latch Enable (LE) is HIGH. When the Latch Enable (LE) goes LOW, the data is latched. The Output Enable (OE) controls the tri-state outputs. When the Output Enable (OE) is HIGH, the outputs are in the high impedance state. The latch operation is independent of the state of the Output Enable. OE OE 1 20 VCC D0 2 19 Q0 D1 3 18 Q1 D2 4 17 Q2 D3 5 16 Q3 D4 6 15 Q4 D5 7 14 Q5 D6 8 13 Q6 D7 9 12 Q7 10 11 LE GND The HCS573MS is supplied in a 20 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCS573DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP HCS573KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack HCS573D/Sample +25oC Sample 20 Lead SBDIP HCS573K/Sample +25oC Sample 20 Lead Ceramic Flatpack HCS573HMSR +25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 324 518771 File Number 4056 Spec Number HCS573MS Functional Diagram P P P OE OE LE A N P Qn N N LE LE N LE Dn Qn P OE N A LE OE LE P N LE TRUTH TABLE OUTPUT ENABLE LATCH ENABLE DATA OUTPUT L H H H L H L L L L I L L L h H H X X Z H = High Level L = Low Level X = Immaterial Z = High Impedance I = Low voltage level prior to the high-to-low latch enable transition h = High voltage level prior to the high-to-low latch enable transition Spec Number 325 518771 Specifications HCS573MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Output Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 µA 1 +25oC 7.2 - mA 2, 3 +125oC, -55oC 6.0 - mA 1 +25oC -7.2 - mA 2, 3 +125oC, -55oC -6.0 - mA VCC = 4.5V, VIH = 3.15V, IOL = 50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 3.15V, IOH = -50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 1 +25oC - ±1.0 µA 2, 3 +125oC, -55oC - ±50 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN IOZ FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 5.5V, VIN = 0V or VCC VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) LIMITS NOTES: 1. All voltages reference to device GND. 2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 326 518771 Specifications HCS573MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Data to Qn LE to Qn SYMBOL TPLH TPHL TPLH TPHL Enable to Output TPZL TPZH Disable to Output (NOTES 1, 2) CONDITIONS TPLZ TPHZ GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 24 ns 10, 11 +125oC, -55oC 2 29 ns VCC = 4.5V VCC = 4.5V LIMITS o 9 +25 C 2 27 ns 10, 11 +125oC, -55oC 2 35 ns VCC = 4.5V o 9 +25 C 2 31 ns 10, 11 +125oC, -55oC 2 40 ns VCC = 4.5V o 9 +25 C 2 27 ns 10, 11 +125oC, -55oC 2 33 ns VCC = 4.5V o 9 +25 C 2 24 ns 10, 11 +125oC, -55oC 2 29 ns 9 +25oC 2 25 ns 10, 11 +125oC, -55oC 2 29 ns 9 +25oC 2 21 ns 10, 11 +125oC, -55oC 2 25 ns VCC = 4.5V VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance Output Transition Time Setup Time Data to LE Hold Time Data to LE Pulse Width LE CIN TTHL TTLH TSU TH TW CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 +25oC - 30 pF 1 +125oC, -55oC - 60 pF 1 +25oC - 10 pF 1 +125oC, -55oC - 10 pF 1 +25oC - 12 ns 1 +125oC, -55oC - 18 ns 1 +25oC 10 - ns 1 +125oC, -55oC 15 - ns 1 +25oC 8 - ns 1 +125oC, -55oC 12 - ns 1 +25oC 16 - ns 1 +125oC, -55oC 24 - ns VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Spec Number 327 518771 Specifications HCS573MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL TEMPERATURE MIN MAX UNITS Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 6.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -6.0 - mA Output Voltage Low VOL VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50µA +25oC - 0.1 V Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50µA +25oC VCC -0.1 - V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA Tri-State Output Leakage Current IOZ Applied Voltage = 0V or VCC, VCC = 5.5V +25oC - ±50 µA Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 3) +25oC - - - Data to Qn TPHL TPLH VCC = 4.5V +25oC 2 29 ns LEN to Qn TPLH VCC = 4.5V +25oC 2 35 ns TPHL VCC = 4.5V +25oC 2 40 ns TPZL VCC = 4.5V +25oC 2 33 ns TPZH VCC = 4.5V +25oC 2 29 ns TPLZ VCC = 4.5V +25oC 2 29 ns TPHZ VCC = 4.5V +25oC 2 25 ns Enable to Output Disable to Output NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 12µA IOL/IOH 5 -15% of 0 Hour IOZL/IOZH 5 ±200nA PARAMETER Spec Number 328 518771 Specifications HCS573MS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/H Subgroups 1, 2, 3, 9, 10, 11, (Note 2) NOTES: 1. Alternate Group A testing in accordance with method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 20 - - - 1 - 9, 11, 20 - - 12 - 19 20 11 2-9 STATIC BURN-IN I TEST CONNECTIONS (Note 1) 12 - 19 1 - 11 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 12 - 19 10 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) - 1, 10 NOTES: 1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 12 - 19 10 1 - 9, 11, 20 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 329 518771 HCS573MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 330 518771 HCS573MS AC Timing Diagrams INPUT LEVEL INPUT LEVEL LE VS VS VS LE VS TPLH VS VS TSU(L) TSU(H) TH(L) VS VS TH(H) TW DATA VS DATA VS VS TPHL QN QN VS VS FIGURE 1. LATCH ENABLE PROPAGATION DELAYS FIGURE 2. LATCH ENABLE PREREQUISITE TIMES AC VOLTAGE LEVELS PARAMETER VOH TTLH 20% UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VIL 0 V GND 0 V TTHL 80% VOL HCS 80% 20% OUTPUT FIGURE 3. DATA SET-UP AND HOLD TIMES AC Load Circuit DUT TEST POINT CL RL CL = 50pF RL = 500Ω Spec Number 331 518771 HCS573MS Three-State Low Timing Diagram Three-State Low Load Circuit VCC VIH VS INPUT RL VIL TPZL TEST POINT DUT TPLZ CL VOZ VT VW OUTPUT CL = 50pF VOL RL = 500Ω THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VT 2.25 V VW 0.90 V 0 V GND Three-State HighTiming Diagram Three-State High Load Circuit DUT VIH VS TEST POINT INPUT VIL CL RL TPZH TPHZ VOH VT CL = 50pF VW OUTPUT RL = 500Ω VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VT 2.25 V VW 3.60 V 0 V GND Spec Number 332 518771 HCS573MS Die Characteristics DIE DIMENSIONS: 101 x 85 mils METALLIZATION: Type: SiAl Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCS573MS D0 (2) OE (1) VCC (20) Q0 (19) (18) Q1 D1 (3) (17) Q2 D2 (4) (16) Q3 D3 (5) D4 (6) (15) Q4 D5 (7) (14) Q5 D6 (8) (13) Q6 (9) D7 (10) GND (11) LE (12) Q7 Spec Number 333 518771