PHOTOMULTIPLIER TUBE R11715-01 (Cooled PMT) 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type Low Noise Bialkali Photocathode + UV Glass, With a Peltier Device Thermistor, and Insulation Cover Case Attached SPECIFICATIONS GENERAL Parameter Description / Value Spectral Response 185 to 710 Wavelength of Maximum Response 410 MateriaI Low noise bialkali Photocathode Minimum Effective Area 8 × 24 Window Material UV glass Structure Circular-cage Dynode Number of Stages 9 11-pin base JEDEC No. B11-88 Base Approx. 68 Weight -30 to +50 Operating Ambient Temperature -30 to +50 Storage Temperature E678-11A (Sold separately) SuitabIe Socket E717-63 (Sold separately) SuitabIe Socket Assembly Unit nm nm — mm — — — — g °C °C — — R11715-01 (R11715 with peltier device) PELTIER DEVICE Unit V V mA Parameter Value Maximum Power Consumption 8.20 W Maximum Supply Current 2.73 A Maximum Applied Voltage 3.00 V Maximum Operating Temperature 50 °C Leak Current Between 1 nA or less 1 Cathode and Peltier GND CHARACTERISTlCS (at Ambient Temperature 25 °C) NOTE: 1Insulation resistance at 25 °C: 1.0 × 1014 Ω MAXIMUM RATINGS (Absolute Maximum Values) Value 1250 250 0.1 Parameter Supply Between Anode and Cathode Voltage Between Anode and Last Dynode Average Anode Current Cathode Sensitivity Parameter Luminous (2856 K) Radiant at 410 nm Quantum Efficiency at 410 nm Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Radiant at 410 nm Anode Sensitivity Gain Anode Dark Current (After 30 min Storage in Darkness) Anode Dark Counts at Plateau Voltage Time Anode Pulse Rise Time Response Electron Transit Time Min. 80 — — — 1000 — — — — — — Typ. 100 70 21.1 8 1200 8 × 105 1.2 × 107 0.2 / 0.02 A 10 / 1 A 2.2 22 Max. — — — — — — — Unit µA/lm mA/W % — A/lm A/W — 0.5 nA 50 — — s-1 ns ns NOTE: AThe values are measured at ambient temperature 25 °C and a Peltier supply current of 2.73 A, with a heatsink attached to the R11715-01 for forced air cooling. PELTIER COOLING PERFORMANCE Parameter Cathode Cooling Temperature (∆T) Time Required to Reach Target Cooling Temperature Value -15 °C 2 3 min 3 NOTE: 2, 3At a supply current of 2.73 A and with a heatsink attached to the R11715-01 for forced air cooling. Cooling temperature (∆T) is the difference between the ambient temperature and the cathode temperature when fully cooled. When attaching a heatsink to the R11715-01, apply thermal grease to the surface of the Peltier device so that the heat on the hot side dissipates efficiently through the heatsink during operation. Temperature should be controlled by current during operation of the Peltier device. VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE P Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Ratio 1 1 1 1 1 1 1 1 1 1 Supply Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R11715-01 (Cooled PMT) 108 TPMSB0243EA 50 107 101 CATHODE RADIANT SENSITIVITY 100 QUANTUM EFFICIENCY 10-1 10-2 100 106 105 200 300 400 500 600 700 104 500 800 Figure 3: Cooling Characteristics Example (at ambient temperature 40 °C) 600 700 800 1000 1200 1400 TPMSB0239EA 45 180 40 160 35 PHOTOCATHODE TEMPERATURE (°C) 140 30 120 25 100 20 80 60 15 DARK COUNT (s-1) 10 40 5 20 0 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 SUPPLY VOLTAGE (V) WAVELENGTH (nm) 200 DARK COUNT (s-1) TPMSB0242EA GAIN CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 102 Figure 2: Typical Gain Characteristics PHOTOCATHODE TEMPERATURE (°C) Figure 1: Typical Spectral Response TIME (s) * Measured by R11715-01 with heatsink. (heatsink is not on sale) Figure 4: Dimensional Outlines and Basing Diagram (Unit: mm) THERMISTOR PELTIER DEVICE 20 40.0 ± 0.5 5 2.5 ± 0.5 2.5 10 MIN. PELTIER DEVICE 12.5 DY5 5 76 ± 1 DY4 DY6 6 DY7 7 8 4 10 2 DY2 DY8 9 DY9 DY3 3 90 ± 1 PHOTOCATHODE 49.0 ± 2.5 24 MIN. INSULATING PROTECTIVE COVER 1 DY1 11 K P DIRECTION OF LIGHT TPMSA0045EB HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMS1085E01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] OCT. 2014. IP