SCH2080KE Data Sheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS(on) (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Low VSD *1 Body Diode *2 SBD 5) Easy to parallel 6) Simple to drive lPackaging specifications 7) Pb-free lead plating ; RoHS compliant Packing lApplication Reel size (mm) - Tape width (mm) - ・Solar inverters Tube Type ・DC/DC converters Basic ordering unit (pcs) 30 ・Induction heating Packing code C ・Motor drives Marking SCH2080KE lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 40 A Tc = 100°C ID *1 28 A ID,pulse *2 80 A VGSS -6 to 22 V VGSS-surge*3 -10 to 26 V Power dissipation (Tc = 25°C) PD 262 W Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2015.11 - Rev.F Data Sheet SCH2080KE lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 0.44 0.57 °C/W Thermal resistance, junction - ambient RthJA - - 50 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 20 400 A Tj = 150°C - 170 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA 1.6 2.8 4.0 V Gate threshold voltage VGS (th) VDS = VGS, ID = 4.4mA *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 80 117 Tj = 125°C - 125 - f = 1MHz, open drain - 6.3 - W S VGS = 18V, ID = 10A Static drain - source on - state resistance Gate input resistance RDS(on) *4 Tj = 25°C RG Transconductance gfs *4 VDS = 10V, ID = 10A - 3.7 - Input capacitance Ciss VGS = 0V - 1850 - Output capacitance Coss VDS = 800V - 175 - Reverse transfer capacitance Crss f = 1MHz - 20 - VDD = 400V, VGS = 18V - 37 - tr *4 ID = 10A - 33 - td(off) *4 RL = 40W - 70 - tf *4 RG = 0W - 28 - - 218 - Turn - on delay time Rise time Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss td(on) *4 Eon *4 Eoff *4 mW pF ns VDD = 600V, ID=10A VGS = 18V/0V RG = 0W, L=500H *Eon includes diode reverse recovery J - 64 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol *4 Conditions Unit Min. Typ. Max. VDD = 400V - 106 - Total gate charge Qg Gate - Source charge Qgs *4 ID = 10A - 27 - Gate - Drain charge Qgd *4 VGS = 18V - 31 - Gate plateau voltage V(plateau) VDD = 400V, ID = 10A - 9.7 - www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/13 nC V 2015.11 - Rev.F Data Sheet SCH2080KE lInternal diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 40 A - - 80 A - 1.3 - V - 37 - ns - 60 - nC - 2.4 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *4 Reverse recovery time trr VGS = 0V, IS = 10A *4 Reverse recovery charge Qrr *4 Peak reverse recovery current Irrm *4 IF = 10A, VR = 400V di/dt = 150A/s lTypical Transient Thermal Characteristics Symbol Value Rth1 0.078 Rth2 0.197 Rth3 0.162 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Cth1 0.005 Cth2 0.018 Cth3 0.249 Unit Ws/K 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 300 100 PW = 100us PW = 1ms Drain Current : ID [A] Power Dissipation : PD [W] 250 200 150 100 10 Operation in this area is limited by RDS(ON) 1 PW = 10ms 50 Ta = 25ºC Single Pulse 0 PW = 100ms 0.1 0 50 100 150 200 0.1 Junction Temperature : Tj [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : Rth [K/W] 1 Ta = 25ºC Single 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 40 VGS= 20V VGS= 16V 35 18 VGS= 18V VGS= 14V Drain Current : ID [A] Drain Current : ID [A] VGS= 18V VGS= 14V 16 30 25 20 VGS= 12V 15 VGS= 10V 10 5 Ta = 25ºC Pulsed 14 VGS= 12V 12 10 8 6 VGS= 10V 4 Ta = 25ºC Pulsed 2 0 0 0 2 4 6 8 0 10 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) 20 40 VGS = 20V 35 VGS = 18V 30 VGS = 16V 25 VGS = 14V Drain Current : ID [A] Drain Current : ID [A] VGS= 16V VGS= 20V 20 VGS = 12V 20 VGS = 10V 15 10 Ta = 150ºC Pulsed 5 18 VGS = 20V 16 VGS = 18V 14 VGS = 16V 12 VGS = 14V VGS = 12V 10 VGS= 10V 8 6 4 Ta = 150ºC Pulsed 2 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Typical Transfer Characteristics (II) 40 100 VDS = 10V Pulsed 30 Drain Current : ID [A] 10 Drain Current : ID [A] VDS = 10V Pulsed 35 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 25 20 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 15 10 5 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 2 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature Fig.11 Transconductance vs. Drain Current 5 10 VDS = 10V ID = 10mA 4.5 VDS = 10V Pulsed 4 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 3.5 3 2.5 2 1.5 1 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.5 0 -50 0 50 100 0.01 0.01 150 1 10 100 Drain Current : ID [A] Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 0.1 7/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage 0.15 Ta = 25ºC Pulsed 0.6 0.4 ID = 20A 0.2 ID = 10A 0 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.8 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature VGS = 18V Pulsed ID = 20A 0.1 ID = 10A 0.05 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Gate - Source Voltage : VGS [V] Static Drain - Source On-State Resistance : RDS(on) [Ω] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS = 18V Pulsed 0.1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 10000 60 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : EOSS [uJ] Ta = 25ºC Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 0.1 1 10 100 50 40 30 20 10 0 1000 0 400 600 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 20 10000 1000 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 400V VGS = 18V RG = 0Ω Pulsed tf Switching Time : t [ns] 200 td(off) 100 tr 10 td(on) Ta = 25ºC VDD = 400V ID = 10A Pulsed 15 10 5 0 1 0.01 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20 40 60 80 100 120 Total Gate Charge : Qg [nC] 9/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 400 1200 300 250 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=500H 1000 Switching Energy : E [J] Switching Energy : E [J] 1100 Ta = 25ºC ID=10A VGS = 18V/0V RG=0W L=500H 350 Eon 200 150 100 50 Eoff 900 800 Eon 700 600 500 400 300 200 Eoff 100 0 0 0 200 400 600 800 0 1000 5 10 15 20 25 30 35 Drain - Current : ID [A] Drain - Source Voltage : VDS [V] Fig.21 Typical Switching Loss vs. External Gate Resistance 600 Ta = 25ºC VDD=600V ID=10A VGS = 18V/0V L=500H 550 Switching Energy : E [J] 500 450 400 Eon 350 300 250 200 150 Eoff 100 50 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/13 2015.11 - Rev.F Data Sheet SCH2080KE lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 1 0.1 Ta = 25ºC di / dt = 150A / us VR = 400V VGS = 0V Pulsed 100 10 0.01 0 0.5 1 1.5 1 2 100 Inverse Diode Forward Current : IS [A] Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 11/13 2015.11 - Rev.F Data Sheet SCH2080KE lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/13 2015.11 - Rev.F Data Sheet SCH2080KE lDimensions (Unit : mm) TO-247 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 13/13 2015.11 - Rev.F Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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