SCT2450KE Data Sheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating ; RoHS compliant Packaging lApplication Tube Reel size (mm) - Tape width (mm) - Type • Solar inverters Basic ordering unit (pcs) 30 • DC/DC converters Packing code C • Switch mode power supplies Marking SCT2450KE • Induction heating • Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 10 A Tc = 100°C ID *1 7 A ID,pulse *2 25 A VGSS -6 to 22 V VGSS-surge*3 -10 to 26 V Power dissipation (Tc = 25°C) PD 85 W Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2015.11 - Rev.C Data Sheet SCT2450KE lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 1.36 1.77 °C/W Thermal resistance, junction - ambient RthJA - - 50 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 A Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA 1.6 2.8 4.0 V Gate threshold voltage VGS (th) VDS = VGS, ID = 0.9mA *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 450 585 Tj = 125°C - 610 - f = 1MHz, open drain - 25 - W S VGS = 18V, ID = 3A Static drain - source on - state resistance Gate input resistance RDS(on) *4 Tj = 25°C RG Transconductance gfs *4 VDS = 10V, ID = 3A - 1.0 - Input capacitance Ciss VGS = 0V - 463 - Output capacitance Coss VDS = 800V - 21 - Reverse transfer capacitance Crss f = 1MHz - 4 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 500V - 31 - Turn - on delay time td(on) *4 VDD = 400V, VGS = 18V - 19 - ID = 3A - 17 - RL = 133W - 38 - RG = 0W - 34 - - 47 - tr *4 Rise time Turn - off delay time td(off) *4 tf *4 Fall time Turn - on switching loss Turn - off switching loss Eon *4 Eoff *4 mW pF pF ns VDD = 600V, ID=3A VGS = 18V/0V RG = 0W, L=500H *Eon includes diode reverse recovery J - 17 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *4 VDD = 400V - 27 - Gate - Source charge Qgs *4 ID = 3A - 7 - Gate - Drain charge Qgd VGS = 18V - 9 - VDD = 400V, ID = 3A - 10.5 - Gate plateau voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. *4 V(plateau) 3/13 nC V 2015.11 - Rev.C Data Sheet SCT2450KE lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 10 A - - 25 A - 4.3 - V - 19 - ns - 13 - nC - 1.4 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *4 Reverse recovery time trr VGS = 0V, IS = 3A *4 Reverse recovery charge Qrr *4 Peak reverse recovery current Irrm *4 IF = 3A, VR = 400V di/dt = 110A/s lTypical Transient Thermal Characteristics Symbol Value Rth1 230m Rth2 687m Rth3 441m www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Cth1 219 Cth2 1.29m Cth3 13.1m Unit Ws/K 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 90 100 PW = 100s 70 Drain Current : ID [A] Power Dissipation : PD [W] 80 60 50 40 30 20 PW = 1ms 10 PW = 10ms PW = 100ms 1 Operation in this area is limited by RDS(on) 0.1 Ta=25ºC Single Pulse 10 0 0.01 0 50 100 150 200 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 5 10 20V 18V 18V 4 14V 16V Drain Current : ID [A] Drain Current : ID [A] 8 14V 20V Ta=25ºC Pulsed 6 12V 4 10V 2 16V 12V 3 10V 2 VGS= 8V 1 Ta=25ºC Pulsed VGS= 8V 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150°C Typical Output Characteristics(I) Fig.7 Tj = 150°C Typical Output Characteristics(II) 10 5 Ta=150ºC Pulsed 20V 20V 18V 18V 8 4 16V 14V 6 Drain Current : ID [A] Drain Current : ID [A] 1 12V 10V 4 2 VGS= 8V 12V 16V 14V 10V 3 2 VGS= 8V 1 Ta=150ºC Pulsed 0 0 2 4 6 8 0 10 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 10 10 VDS= 10V Plused VDS= 10V Plused 9 Drain Current : ID [A] Drain Current : ID [A] 8 1 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 7 6 5 4 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 3 2 1 0 0.001 0 2 4 6 8 0 10 12 14 16 18 20 4 6 Fig.10 Gate Threshold Voltage vs. Junction Temperature 10 12 14 16 18 20 Fig.11 Transconductance vs. Drain Current 5 10 VDS = 10V ID = 1mA 4.5 VDS= 10V Plused Transconductance : gfs [S] 4 3.5 3 2.5 2 1.5 1 1 0.1 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.5 0 -50 8 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Gate Threshold Voltage : VGS(th) [V] 2 0 50 100 150 0.01 0.01 200 Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 0.1 1 10 Drain Current : ID [A] 7/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves 1.4 Ta=25ºC Pulsed 1.2 1 ID = 6A 0.8 0.6 ID = 3A 0.4 0.2 0 6 8 10 12 14 16 18 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 20 22 Gate - Source Voltage : VGS [V] 1 0.9 VGS= 18V Plused 0.8 0.7 ID = 6A 0.6 0.5 ID = 3A 0.4 0.3 0.2 0.1 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 10 VGS= 18V Plused 1 Ta=150ºC Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 10 1000 Coss Stored Energy : EOSS [J] Capacitance : C [pF] 10000 Ciss 100 Coss 10 Crss Ta=25ºC f = 1MHz VGS = 0V Ta=25ºC 9 8 7 6 5 4 3 2 1 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 400 600 800 Drain - Source Voltage : VDS [V] Fig.18 Dynamic Input Characteristics Fig.17 Switching Characteristics 10000 20 Ta = 25ºC VDD = 400V VGS = 18V RG= 0W Pulsed tf 1000 Gate - Source Voltage : VGS [V] Switching Time : t [ns] 200 td(off) 100 td(on) 10 tr 1 Ta = 25ºC VDD= 400V ID= 3A Pulsed 15 10 5 0 0.1 1 10 100 0 10 15 20 25 30 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5 9/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 300 100 Switching Energy : E [J] 90 80 70 Switching Energy : E [J] Ta = 25ºC ID= 3A VGS = 18V/0V RG= 0W L=500H Eon 60 50 40 30 Eoff 20 Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0W L=500H 250 200 Eon 150 100 Eoff 50 10 0 0 0 200 400 600 800 1000 0 Drain - Source Voltage : VDS [V] 2 4 6 8 10 12 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 120 Ta = 25ºC VDD= 600V ID= 3A VGS = 18V/0V L=500H Switching Energy : E [J] 110 100 90 80 Eon 70 60 50 40 30 Eoff 20 10 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/13 2015.11 - Rev.C Data Sheet SCT2450KE lElectrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 10 1000 VGS=0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 1 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 Ta=25ºC di / dt = 110A / s VR = 400V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 Inverse Diode Forward Current : IS [A] 11/13 2015.11 - Rev.C Data Sheet SCT2450KE lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/13 2015.11 - Rev.C Data Sheet SCT2450KE lDimensions (Unit : mm) TO-247 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 13/13 2015.11 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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