DATASHEET

ISL43L840
®
Data Sheet
October 12, 2004
Ultra Low ON-Resistance, Low-Voltage,
Single Supply, Dual 4 to 1 Analog
Multiplexer
The Intersil ISL43L840 device is a precision, bidirectional,
analog switches configured as a dual 4-channel
multiplexer/demultiplexer, designed to operate from a single
+1.6V to +3.6V supply.
ON resistance is 0.5Ω with a +3V supply and 0.62Ω with a
single +1.8V supply. Each switch can handle rail to rail
analog signals. The off-leakage current is only 4nA max at
+25°C and 30nA max at +85°C with a +3.3V supply.
All digital inputs are 1.8V logic-compatible when using a
single +3V supply.
The ISL43L840 is a dual 4 to 1 multiplexer device that is
offered in a 16 Ld TSSOP and 16 Ld 3x3 QFN packages.
FN6096.1
Features
• ON Resistance (RON)
- V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5Ω
- V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.62Ω
• RON Matching Between Channels. . . . . . . . . . . . . . . . .0.12Ω
• RON Flatness Across Signal Range . . . . . . . . . . . . . .0.056Ω
• Single Supply Operation. . . . . . . . . . . . . . . . . +1.6V to +3.6V
• Low Power Consumption (PD). . . . . . . . . . . . . . . . . . <0.2µW
• Fast Switching Action (VS = +3V)
- tRANS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19ns
• Guaranteed Break-Before-Make
• High Current Handling Capacity (300mA Continuous)
• Available in 16 Ld 3x3 QFN and 16 Ld TSSOP
• 1.8V CMOS-Logic Compatible (+3V Supply)
Table 1 summarizes the performance of this family.
TABLE 1. FEATURES AT A GLANCE
• Pb-Free Available as an Option (RoHS Compliant)
(see Ordering Info)
ISL43L840
Applications
Configuration
Dual 4:1 Mux
3V RON
0.5Ω
3V tRANS
19ns
1.8V RON
0.62Ω
1.8V tRANS
24ns
Packages
16 Ld TSSOP, 16 Ld 3x3 QFN
• Battery Powered, Handheld, and Portable Equipment
- Cellular/Mobile Phones
- Pagers
- Laptops, Notebooks, Palmtops
Related Literature
• Portable Test and Measurement
• Medical Equipment
• Audio and Video Switching
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Application Note AN557 “Recommended Test Procedures
for Analog Switches”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL43L840
(Note 1)
A0
V+
B2
ISL43L840 (3X3 QFN)
A2
ISL43L840 (TSSOP)
TOP VIEW
16
15
14
13
A2 2
15 B2
COMA
1
12 B1
COMA 3
14 B1
A3
2
11 COMB
A1
3
10 B0
ADDA0
4
9
13 COMB
A1 5
12 B0
ADDA0 6
11 B3
10 ADDB0
LOGIC
ADDA1 7
9 ADDB1
GND 8
5
6
7
B3
8
ADDB0
A3 4
ADDB1
16 V+
GND
A0 1
ADDA1
Pinouts
NOTE:
1. Switches Shown for Logic “0” Inputs.
Truth Table
Ordering Information
ISL43L840
ADDA1
ADDA0
ADDB1
ADDB0
SWITCH ON
0
0
X
X
A0
0
1
X
X
A1
1
0
X
X
A2
1
1
X
X
A3
X
X
0
0
B0
X
X
0
1
B1
X
X
1
0
B2
X
X
1
1
B3
NOTE:
Care.
PART NO.
TEMP.
RANGE (°C)
PIN
V+
GND
FUNCTION
System Power Supply Input (1.6V to 3.6V)
Ground Connection
COMA
Analog Switch Channel A Output
COMB
Analog Switch Channel B Output
A0-A3
Analog Switch Channel A Input
B0-B3
Analog Switch Channel B Input
ADDAx
Address Input Pin
ADDBx
Address Input Pin
2
PKG. DWG. #
ISL43L840IV
-40 to 85
16 Ld TSSOP
M16.173
ISL43L840IV-T
-40 to 85
16 Ld TSSOP
Tape & Reel
M16.173
ISL43L840IR
-40 to 85
16 Ld 3x3 QFN
L16.3x3
ISL43L840IR-T
-40 to 85
16 Ld 3x3 QFN
Tape & Reel
L16.3x3
ISL43L840IVZ
(See Note)
-40 to 85
16 Ld TSSOP
(Pb-free)
M16.173
ISL43L840IVZ-T
(See Note)
-40 to 85
16 Ld TSSOP
Tape and Reel
(Pb-free)
M16.173
ISL43L840IRZ
(See Note)
-40 to 85
16 Ld 3x3 QFN
(Pb-free)
L16.3x3
ISL43L840IRZ-T
(See Note)
-40 to 85
16 Ld 3x3 QFN
Tape and Reel
(Pb-free)
L16.3x3
Logic “0” ≤0.5V. Logic “1” ≥1.4V, with a 3V supply. X = Don’t
Pin Descriptions
PACKAGE
NOTE: Intersil Pb-free products employ special Pb-free material
sets; molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and compatible
with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C.
FN6096.1
ISL43L840
Absolute Maximum Ratings
Thermal Information
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.7V
Input Voltages
Ax, Bx, ADDx (Note 2) . . . . . . . . . . . . . . . . . . -0.3 to (V+) + 0.3V
Output Voltages
COMx (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+) + 0.3V
Continuous Current NO or COM . . . . . . . . . . . . . . . . . . . . . ±300mA
Peak Current NO or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . ±500mA
ESD Rating
HBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV
Thermal Resistance (Typical, Note 3)
θJA (°C/W)
16 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .
150
16 Ld 3x3 QFN Package . . . . . . . . . . . . . . . . . . . . .
75
Maximum Junction Temperature (Plastic Package). . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
(Lead Tips Only)
Operating Conditions
Temperature Range
ISL43L840IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. Signals on Ax, Bx, COMx, ADDx exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications - 3V Supply Test Conditions: VSUPPLY = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 4, 8),
Unless Otherwise Specified
TEMP
(°C)
(NOTE 5)
MIN
TYP
Full
0
-
V+
V
25
-
0.5
0.75
Ω
Full
-
-
0.8
Ω
25
-
0.12
0.2
Ω
Full
-
-
0.2
Ω
25
-
0.056
0.15
Ω
Full
-
-
0.15
Ω
25
-4
-
4
nA
Full
-30
-
30
nA
25
-8
-
8
nA
Full
-60
-
60
nA
Input Voltage High, VINH, VADDH
Full
1.4
-
-
V
Input Voltage Low, VINL, VADDL
Full
-
-
0.5
V
V+ = 3.6V, VINH = VADD = 0V or V+ (Note 10)
Full
-0.5
-
0.5
µA
V+ = 2.7V, VAx or VBx = 1.5V, RL = 50Ω, CL = 35pF,
(See Figure 1, Note 10))
25
-
19
28
ns
Full
-
-
30
ns
25
-
4
-
ns
Full
1
-
-
ns
PARAMETER
TEST CONDITIONS
(NOTE 5)
MAX
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
ON Resistance, RON
V+ = 2.7V, ICOM = 100mA, VAx or VBx = 0V to V+,
(See Figure 5)
RON Matching Between Channels,
∆RON
V+ = 2.7V, ICOM = 100mA, VAx or VBx = Voltage at max
RON, (Note 6)
RON Flatness, RFLAT(ON)
V+ = 2.7V, ICOM = 100mA, VAx or VBx = 0V t0 V+,
(Note 7)
Ax or Bx OFF Leakage Current,
IAx(OFF) or IBx(OFF)
V+ = 3.3V, VCOM = 0.3V, 3V, VAx or VBx = 3V, 0.3V
COM ON Leakage Current,
ICOM(ON)
V+ = 3.3V, VCOM = VAx or VBx = 0.3V, 3V
DIGITAL INPUT CHARACTERISTICS
Input Current, IINH, IINL, IADDH,
IADDL
DYNAMIC CHARACTERISTICS
Address Transition Time, tTRANS
Break-Before-Make Time, tBBM
V+ = 3.3V, VAx or VBx = 1.5V, RL = 50Ω, CL = 35pF,
(See Figure 3, Note 10)
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0Ω, (See Figure 2)
25
-
-96
-
pC
Input OFF Capacitance, COFF
f = 1MHz, VAx or VBx = VCOM = 0V, (See Figure 7)
25
-
62
-
pF
COM ON Capacitance, CCOM(ON)
f = 1MHz, VAx or VBx = VCOM = 0V, (See Figure 7)
25
-
232
-
pF
3
FN6096.1
ISL43L840
Electrical Specifications - 3V Supply Test Conditions: VSUPPLY = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 4, 8),
Unless Otherwise Specified (Continued)
TEMP
(°C)
(NOTE 5)
MIN
TYP
RL = 50Ω, CL = 35pF, f = 100kHz,
(See Figures 4 and 6)
25
-
65
-
dB
25
-
-100
-
dB
f = 20Hz to 20kHz, 0.5Vp-p, RL = 32Ω
25
-
0.02
-
%
Full
1.6
-
3.6
V
25
-
-
0.05
µA
Full
-
-
0.9
µA
PARAMETER
TEST CONDITIONS
OFF Isolation
Crosstalk, (Note 9)
Total Harmonic Distortion (THD)
(NOTE 5)
MAX
UNITS
POWER SUPPLY CHARACTERISTICS
Power Supply Range
Positive Supply Current, I+
V+ = 3.6V, VINH, VADD = 0V or V+, Switch On or Off
NOTES:
4. VIN = Input voltage to perform proper function.
5. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
6. RON matching between channels is calculated by subtracting the channel with the highest max Ron value from the channel with lowest max Ron
value.
7. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range.
8. Parts are 100% tested at +25°C. Limits across the full temperature range are guaranteed by design and correlation.
9. Between any two switches.
10. Guaranteed but not tested.
Electrical Specifications: 1.8V Supply Test Conditions: V+ = +1.8V, GND = 0V, VINH = 1V, VINL = 0.4V (Note 4, 8),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (NOTE 5)
TYP
MAX
UNIT
(NOTE 5)
S
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Full
0
-
V+
V
25
-
0.62
0.85
Ω
Full
-
-
0.9
Ω
25
-
0.12
-
Ω
Full
-
0.12
-
Ω
25
-
0.14
-
Ω
Full
-
0.14
-
Ω
Input Voltage High, VINH, VADDH
Full
1
-
-
V
Input Voltage Low, VINL, VADDL
Full
-
-
0.4
V
Input Current, IINH, IINL, IADDH, IADDL V+ = 1.8V, VINH, VADD = 0V or V+ (Note 10)
Full
-0.5
-
0.5
µA
25
-
24
33
ns
Full
-
-
35
ns
ON Resistance, RON
V+ = 1.8V, ICOM = 10.0mA, VAx or VBx= 1.0V,
(See Figure 5)
RON Matching Between Channels,
∆RON)
V+ = 1.8V, ICOM = 10.0mA, VAx or VBx = 1.0V,
(See Figure 5)
RON Flatness, RFLAT(ON)
V+ = 1.8V, ICOM = 10.0mA, VAx or VBx = 0V, 0.9V, 1.6V,
(See Figure 5)
DIGITAL INPUT CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Address Transition Time, tTRANS
V+ = 1.8V, VAx or VBx = 1.0V, RL = 50Ω, CL = 35pF,
(See Figure 1, Note 10)
Break-Before-Make Time, tBBM
V+ = 1.8V, VAx or VBx = 1.0V, RL = 50Ω, CL = 35pF,
(See Figure 3, Note 10)
25
-
9
-
ns
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0Ω, (See Figure 2)
25
-
-46
-
pC
4
FN6096.1
ISL43L840
Test Circuits and Waveforms
V+
LOGIC
INPUT
tr < 5ns
tf < 5ns
50%
V+
C
C
0V
tTRANS
V+
VOUT
VA0, VB0
A0,B0
90%
VOUT
COMA
COMB
A1-A3
B1-B3
ADD1-0 GND
SWITCH
OUTPUT
LOGIC
INPUT
10%
0V
CL
35pF
RL
50Ω
0V
tTRANS
Logic input waveform is inverted for switches that have the opposite
logic sense.
Repeat test for other switches. CL includes fixture and stray
capacitance.
RL
-----------------------------V OUT = V
(NO or NC) R + R
L
( ON )
FIGURE 1A. ADDRESS tTRANS MEASUREMENT POINTS
FIGURE 1B. ADDRESS tTRANS TEST CIRCUIT
FIGURE 1. SWITCHING TIMES
V+
V+
LOGIC
INPUT
VOUT
RG
OFF
OFF
C
COMA
Ax, Bx
ON
0V
0Ω
COMB
ADDX
SWITCH
OUTPUT
VOUT
VG
∆VOUT
GND
CL
1nF
LOGIC
INPUT
Q = ∆VOUT x CL
Repeat test for other switches.
FIGURE 2B. Q TEST CIRCUIT
FIGURE 2A. Q MEASUREMENT POINTS
FIGURE 2. CHARGE INJECTION
V+
C
C
tr < 5ns
tf < 5ns
V+
LOGIC
INPUT
0V
VOUT
A0-A3
B0-B3
V+
COMA
COMB
ADD1-0
90%
SWITCH
OUTPUT
VOUT
RL
50Ω
CL
35pF
LOGIC
INPUT
GND
0V
tBBM
Repeat test for other switches. CL includes fixture and stray
capacitance.
FIGURE 3A. tBBM MEASUREMENT POINTS
FIGURE 3B. tBBM TEST CIRCUIT
FIGURE 3. BREAK-BEFORE-MAKE TIME
5
FN6096.1
ISL43L840
Test Circuits and Waveforms (Continued)
V+
V+
C
C
RON = V1/100mA
SIGNAL
GENERATOR
NO or NC
NO or NC
VNX
100mA
0V or V+
ANALYZER
COM
0V or V+
V1
ADDX
ADDX
COM
GND
GND
RL
FIGURE 4. OFF ISOLATION TEST CIRCUIT
V+
SIGNAL
GENERATOR
C
V+
NOA or NCA
0V or V+
C
50Ω
COMA
NO or NC
ADDX
0V or V+
ADDX
IMPEDANCE
ANALYZER
NOB or NCB
ANALYZER
FIGURE 5. RON TEST CIRCUIT
COMB
N.C.
GND
COM
GND
RL
FIGURE 6. CROSSTALK TEST CIRCUIT
FIGURE 7. CAPACITANCE TEST CIRCUIT
Detailed Description
The ISL43L840 analog switches offer precise switching
capability from a single 1.6V to 3.6V supply with low onresistance (0.5Ω) and high speed operation (tRANS = 19ns).
The device is especially well-suited to portable battery
powered equipment thanks to the low operating supply
voltage (1.6V), low power consumption (0.2µW), and low
leakage currents (60nA max). High frequency applications
also benefit from the wide bandwidth, and the very high off
isolation and crosstalk rejection.
Supply Sequencing And Overvoltage Protection
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND (see
Figure 8). To prevent forward biasing these diodes, V+ must
be applied before any input signals, and the input signal
voltages must remain between V+ and GND. If these
6
conditions cannot be guaranteed, then one of the following
two protection methods should be employed.
Logic inputs can easily be protected by adding a 1kΩ
resistor in series with the input (see Figure 8). The resistor
limits the input current below the threshold that produces
permanent damage, and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
This method is not applicable for the signal path inputs.
Adding a series resistor to the switch input defeats the
purpose of using a low RON switch, so two small signal
diodes can be added in series with the supply pins to provide
overvoltage protection for all pins (see Figure 8). These
additional diodes limit the analog signal from 1V below V+ to
1V above GND. The low leakage current performance is
unaffected by this approach, but the switch signal range is
FN6096.1
ISL43L840
reduced and the resistance may increase, especially at low
supply voltages.
OPTIONAL
PROTECTION
RESISTOR
FOR LOGIC
INPUTS
1kΩ
OPTIONAL PROTECTION
DIODE
V+
ADDX
VNOx
VCOM
GND
OPTIONAL PROTECTION
DIODE
FIGURE 8. OVERVOLTAGE PROTECTION
High-Frequency Performance
In 50Ω systems, signal response is reasonably flat even past
10MHz with a -3dB bandwidth of 70MHz (see Figure 15).
The frequency response is very consistent over a wide V+
range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal feed
through from a switch’s input to its output. Off Isolation is the
resistance to this feed-through, while Crosstalk indicates the
amount of feed-through from one switch to another.
Figure 16 details the high Off Isolation and Crosstalk
rejection provided by this family. At 100kHz, Off Isolation is
about 65dB in 50Ω systems, decreasing approximately 20dB
per decade as frequency increases. Higher load
impedances decrease Off Isolation and Crosstalk rejection
due to the voltage divider action of the switch OFF
impedance and the load impedance.
Power-Supply Considerations
Leakage Considerations
The ISL43L840 construction is typical of most CMOS analog
switches, in that they have two supply pins: V+ and GND. V+
and GND drive the internal CMOS switches and set their
analog voltage limits. Unlike switches with a 4V maximum
supply voltage, the ISL43L840 4.7V maximum supply
voltage provides plenty of room for the 10% tolerance of
3.6V supplies, as well as room for overshoot and noise
spikes.
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
The minimum recommended supply voltage is 1.6V but the
part will operate with a supply below 1.5V. It is important to
note that the input signal range, switching times, and onresistance degrade at lower supply voltages. Refer to the
electrical specification tables and Typical Performance
curves for details.
V+ and GND power the internal logic (thus setting the digital
switching point) and level shifters. The level shifters convert
the logic levels to switched V+ and V- signals to drive the
analog switch gate terminals.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Logic-Level Thresholds
The device is 1.8V CMOS compatible (0.5V and 1.4V) over a
supply range of 2.0V to 3.6V (see Figure 13). At 3.6V the VIH
level is about 1.27V. This is still below the 1.8V CMOS
guaranteed high output minimum level of 1.4V, but noise
margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
7
FN6096.1
ISL43L840
Typical Performance Curves TA = 25°C, Unless Otherwise Specified
0.75
0.65
ICOM = 100mA
V+ = 1.65V
0.7
V+ = 3V
ICOM = 100mA
0.6
0.65
0.55
V+ = 1.8V
85°C
RON (Ω)
RON (Ω)
0.6
0.55
25°C
0.45
V+ = 2.7V
0.5
0.5
V+ = 3V
0.45
0.4
-40°C
V+ = 3.6V
0.4
0
1
2
3
4
0.35
0
0.5
1
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
0.75
2
2.5
3
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
100
V+ = 1.8V
ICOM = 100mA
0.7
0.65
50
85°C
0.6
V+ = 1.8V
0.55
Q (pC)
RON (Ω)
1.5
VCOM (V)
VCOM (V)
25°C
0
V+ = 3V
0.5
-50
0.45
-40°C
0.4
0
0.5
1
VCOM (V)
1.5
2
-100
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE
0.5
1
1.5
VCOM (V)
2
2.5
3
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
1.6
60
1.4
50
1.2
VINH
tRANS (ns)
VINH AND VINL (V)
0
1
VINL
0.8
40
30
85°C
20
0.6
10
1
1.5
2
2.5
3
3.5
4
4.5
V+ (V)
FIGURE 13. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
8
25°C
-40°C
1
1.5
2
2.5
3
V+ (V)
3.5
4
4.5
FIGURE 14. ADDRESS TRANS TIME vs SUPPLY VOLTAGE
FN6096.1
ISL43L840
0
V+ = 3V
GAIN
0
PHASE
20
40
60
80
RL = 50Ω
VIN = 0.2VP-P to 2VP-P
0.1
100
1
10
100
FREQUENCY (MHz)
FIGURE 15. FREQUENCY RESPONSE
CROSSTALK (dB)
-10
-10
20
-20
30
-30
40
-40
50
-50
60
ISOLATION
-60
70
-70
80
-80
OFF ISOLATION (dB)
0
10
V+ = 3V
PHASE (DEGREES)
NORMALIZED GAIN (dB)
Typical Performance Curves TA = 25°C, Unless Otherwise Specified (Continued)
90
CROSSTALK
-90
-100
1k
100
10k
100k
1M
10M
110
100M 500M
FREQUENCY (Hz)
FIGURE 16. CROSSTALK AND OFF ISOLATION
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND (QFN Paddle Connection: To Ground or Float)
TRANSISTOR COUNT:
228
PROCESS:
Submicron CMOS
9
FN6096.1
ISL43L840
Thin Shrink Small Outline Plastic Packages (TSSOP)
M16.173
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
E
0.25(0.010) M
2
INCHES
E1
GAUGE
PLANE
-B1
B M
L
0.05(0.002)
-A-
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.043
-
1.10
-
A1
3
A
D
-C-
e
α
c
0.10(0.004)
C A M
0.05
0.15
-
A2
0.033
0.037
0.85
0.95
-
b
0.0075
0.012
0.19
0.30
9
c
0.0035
0.008
0.09
0.20
-
B S
0.002
D
0.193
0.201
4.90
5.10
3
0.169
0.177
4.30
4.50
4
0.026 BSC
E
0.246
L
0.020
N
α
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-153-AB, Issue E.
0.006
E1
e
A2
A1
b
0.10(0.004) M
0.25
0.010
SEATING PLANE
MILLIMETERS
0.65 BSC
0.256
6.25
0.028
0.50
16
0o
-
0.70
6
16
8o
0o
-
6.50
7
8o
Rev. 1 2/02
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.15mm (0.006
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees)
10
FN6096.1
ISL43L840
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L16.3x3
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
2X
MILLIMETERS
0.15 C A
D
A
9
D/2
D1
D1/2
2X
N
6
INDEX
AREA
0.15 C B
1
2
3
E1/2
E
2X
2X
TOP VIEW
0.15 C A
A
0.90
1.00
-
-
-
0.05
-
A2
-
-
1.00
9
A3
0.20 REF
0.18
0
0.08 C
SEATING PLANE
A3
SIDE VIEW
9
5
NX b
4X P
D1
2.75 BSC
9
1.35
1.50
1.65
-
2.75 BSC
1.35
1.50
9
1.65
7, 8, 10
0.50 BSC
-
k
0.20
-
-
-
L
0.30
0.40
0.50
8
N
16
2
Nd
4
3
P
-
-
0.60
NX k
θ
-
-
12
4
3
9
9
Rev. 1 6/04
4X P
NOTES:
1
(DATUM A)
2
3
6
INDEX
AREA
NX L
N e
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
(Ne-1)Xe
REF.
E2
E2/2
2. N is the number of terminals.
7
3. Nd and Ne refer to the number of terminals on each D and E.
8
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
9
CORNER
OPTION 4X
(Nd-1)Xe
REF.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
BOTTOM VIEW
A1
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
NX b
5
8. Nominal dimensions are provided to assist with PCB Land
Pattern Design efforts, see Intersil Technical Brief TB389.
SECTION "C-C"
C
L
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
C
L
10
7, 8, 10
3.00 BSC
Ne
D2
2 N
5, 8
-
8
7
L1
0.30
3.00 BSC
0.10 M C A B
D2
(DATUM B)
A1
0.23
9
D
e
/ / 0.10 C
C
C C
0.80
E2
A2
NOTES
A
E1
B
MAX
A1
E
0.15 C B
8
NOMINAL
D2
9
4X
MIN
b
E/2
E1
SYMBOL
L
L1
e
10
L
10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2
and D2 MAX dimension.
e
TERMINAL TIP
FOR ODD TERMINAL/SIDE
FOR EVEN TERMINAL/SIDE
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11
FN6096.1