Datasheet

PHOTOMULTIPLIER TUBE
R649
FEATURES
●Low dark count: 350 s-1 Max.
●High gain
APPLICATIONS
●For photon counting
SPECIFICATIONS
GENERAL
Parameter
Spectral response
Wavelength of maximum response
MateriaI
Photocathode
Minimum effective area
Window material
Structure
Dynode
Number of stages
Operating ambient temperature
Storage temperature
Base
Suitable socket
Description / Value
300 to 850
420
Multialkali
5×8
Borosilicate glass
Box and Grid
12
-30 to +50
-80 to +50
21-pin glass base
E678-21C (supplied)
Unit
nm
nm
—
mm
—
—
—
°C
°C
—
—
Value
1500
0.01
Unit
V
mA
MAXIMUM RATINGS (Absolute maximum values)
Supply voltage
Average anode current
Parameter
Between anode and cathode
CHARACTERISTICS (at 25 °C)
Cathode sensitivity
Anode sensitivity
Parameter
Luminous (2856 K)
Radiant at 420 nm
Red / White ratio (R-68)
Luminous (2856 K)
Radiant at 420 nm
Gain
Anode dark count
Time response
Anode pulse rise time
Electron transit time
Min.
80
—
—
100
—
—
—
—
—
Typ.
120
51
0.2
800
3.4 × 105
6.7 × 106
200
13
70
Max.
—
—
—
—
—
—
350
—
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
s-1
ns
ns
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12
P
Ratio
4
0
2.5
1.5
1
1
1
1
1
1
1
1
1
1
Supply voltage: 1000 V, K: Cathode, Dy: Dynode, G: Grid, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2016 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R649
Figure 1: Typical spectral response
Figure 2: Typical gain
TPMHB0530EA
109
CATHODE
RADIANT
SENSITIVITY
TPMHB0607EA
108
10
QUANTUM
EFFICIENCY
107
GAIN
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
1
106
0.1
105
0.01
200
400
600
800
104
500
1000
600
700
800 900 1000
1250
1500
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
Figure 3: Dimensional outline and basing diagram (Unit: mm)
Socket E678-21C
(Supplied)
52.0 ± 1.5
5×8
FACEPLATE
51
19
PHOTOCATHODE
HA
TREATMENT
IC IC DY10
DY8
10 11 12
DY6
DY12
13
9
14
8
DY4
P 7
15
16 DY2
DY11 6
17 G
DY9 5
DY7 4
3
2
DY5
1
DY3
DY1
K
IC
6.5
4
13 MAX.
13
BOTTOM VIEW
(BASING DIAGRAM)
21 PIN BASE
56.8
R5
18 IC
19
20
IC
21
5
126 ± 2
IC
TPMHA0216EC
TACCA0066EC
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
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Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected]
TPMH1256E03
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No.158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)03-659-0080, Fax: (886)07-811-7238 E-mail: [email protected]
APR. 2016 IP