SI-3000KM series Application Note Surface Molding Series Regulator IC SI-3000KM series Jun 2015 Rev.2.0 SANKEN ELECTRIC CO., LTD. SI-3000KM －－－ Contents －－－ 1. General Description 1-1 Features －－－－－－－－－－ 3 1-2 Application －－－－－－－－－－ 3 1-3 Type －－－－－－－－－－ 3 2-1 Package Information －－－－－－－－－－ 4 2-2 Ratings －－－－－－－－－－ 5 2-3 Circuit Diagram －－－－－－－－－－ 10 3-1 Voltage Control －－－－－－－－－－ 12 3-2 Overcurrent Protection －－－－－－－－－－ 12 3-3 Thermal Shutdown －－－－－－－－－－ 13 4-1 External Components －－－－－－－－－－ 14 4-2 Pattern Design Notes －－－－－－－－－－ 15 5-1 Output ON / OFF Control －－－－－－－－－－ 16 5-2 Thermal Design －－－－－－－－－－ 16 6-1 SI-3012KM －－－－－－－－－－ 18 6-2 SI-3010KM －－－－－－－－－－ 20 2. Specification 3. Operational Description 4. Cautions 5. Applications 6. Typical Characteristics 2 SI-3000KM 1. General Description The SI-3000KM is a series regulator IC using a hyposaturation type PNP bipolar transistor in the power section and it can be used with the low difference of input/output voltages. It is provided with an ON / OFF terminal which operates in Active High mode and the current consumption of circuits at OFF time is zero. ● 1-1 Features - - Output current 1A Output current is 1A at maximum with the outline of TO-252-5L. Hyposaturation (Vdif = 0.6 Vmax / Io = 1A) It can be designed with low difference of input/output voltages. ON/OFF function The ON/OFF terminal which can be directly controlled by TLL logic signals is provided. Low current consumption Current consumption of circuits at OFF time is zero. Quiescent Current at no load is 600μA at maximum. High ripple attenuation ratio 75dB: F = 100 - 120kHz at Vo = 5V Built-in Overcurrent protection / Thermal shutdown The automatic restoration and Foldback type overcurrent protection and Thermal shutdown circuit are built in. ● 1-2 Application For on-board local power supplies, power supplies for OA equipment, stabilization of secondary output voltage of regulator and power supply for communication equipment - ● 1-3 Type Type: Semiconductor integrated circuits (monolithic IC) Structure: Resin molding type (transfer molding) 3 SI-3000KM 2. Specification Unit: mm ● 2-1 Package Information *1 ３＊＊＊ＫＭ *2 ＳＫ *3 *4 １ ２ ３ ４ ５ Pin assignment １．Vc ２．VIN ３．GND ４．Vout ５．Sense（or ADJ terminal for SI-3010KM/SI-3012KM） Marking Method *1:Product Name *2:Logo Mark *3:Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept.,O for Oct. N for Nov. D for Dec. 3rd letter：day 1 to 9day： for ”1”to “9” 10 to 31day：for “A” to”Z” (But,“ B”,”I”,”O”,”Q” is removed. *4:Administer number (Seven digit) The stem part has same potential as No. 3 pin (GND). Product mass: about 0.33 g 4 SI-3000KM ● 2-2 Ratings 2-2-1 Absolute Maximum Ratings Parameter Symbol DC Input Voltage Output Control Terminal Voltage DC Output Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance (Junction to Air) Thermal Resistance (Junction to Case) VIN Ta = 25°C Ratings SI-3012KM/3025KM SI-3010KM/2050KM /3033KM /3090KM/3120KM 17 35*1 Units V VC VIN V Io PD*2 Tj Tstg 1.0 1 -30 ro +125 -30 to +125 A W ℃ ℃ θj-a 95 ℃/W θj-c 6 ℃/W *1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage of the electrical characteristics. *2: When mounted on glass-epoxy board of 900mm2 (copper laminate area 4.3%). 2-2-2 Recommended Conditions Parameter Symbol Ratings SI-3012KM SI-3025KM SI-3033KM SI-3010KM SI-3050KM SI-3090KM SI-3120KM 2.4*2 to 6.0*1 2.4*2 to 5.0*1 *2 to 6.0*1 2.4*2 to 27*1 2.4*2 to 17*1 *2 to 20*1 *2 to 25*1 Units Input Voltage VIN Output Current Io 0 to 1.0 A Top -30 to 85 ℃ Tj -20 to 100 ℃ Operational Ambient Temperature Junction Temperature in Operation V *1: VIN (max) and Io (max) are restricted by the relationship PD (max) = (VIN – Vo) × Io . *2: Refer to the Dropout Voltage parameter. 5 SI-3000KM 2-2-3 Electrical Characteristics(1) （SI-3012KM,SI-3025KM,SI-3033KM） Ta = 25°C Ratings Parameter Symbol SI-3012KM(Vo adjustable) min Input Voltage VIN VO (Vadj) Conditio ns Output Voltage Settings Line Regulation ⊿ VOLINE Conditio ns Load Regulation ⊿ VOLOAD Conditio ns Circuit Current at Output OFF Temperature Coefficient of Output Voltage Ripple Rejection Overcurrent Protection Starting Current*2 VC Termin al Control Voltage (Output ON)*3 Control Voltage (Output OFF) Control Current (Output ON) Control Current (Output OFF) min typ SI-3033KM max *1 (1.24) (1.28) (1.32) min typ Units max *1 2.45 2.5 2.55 V 3.234 3.300 3.366 V VIN=3.3V,Io=10mA VIN=3.3V,Io=10mA 15 15 mV VIN=3.3V,Io=10mA 40 VIN=3.3V,Io=10mA 40 40 mV VIN=3.3V, Io=0 to 1A(Vo=2.5V) VIN=3.3V, Io=0 to 1A 0.4 VIN=5V, Io=0 to 1A 0.4 Io=0.5A(Vo=2.5V) 0.4 Io=0.5A 0.6 Io=0.5A 0.6 Io=1A(Vo=2.5V) 0.6 Io=1A 350 Iq VIN=5V,Io=10mA 15 VIN=3.3 to 8V, Io=10mA(Vo=2.5V) VDIF2 Conditio ns Quiescent Circuit Current max 2.4*1 VDIF1 Conditio ns Dropout Voltage typ SI-3025KM Io=1A 350 350 Conditio ns VIN=3.3V,Io=0A,VC=2V, R2=24kΩ VIN=3.3V,Io=0A,VC=2V VIN=5V,Io=0A,VC=2V Iq(OFF) 1 1 1 VIN=3.3V,VC=0V VIN=3.3V,VC=0V VIN=5V,VC=0V ⊿Vo/ ⊿Ta ±0.3 ±0.3 ±0.3 Conditio ns Tj=0 to 100℃(Vo=2.5V) Tj=0 to 100℃ Tj=0 to 100℃ RREJ 55 55 55 Conditio ns VIN=3.3V,f=100 to 120Hz,Vo=2.5V VIN=3.3V,f=100 to 120Hz VIN=5V,f=100 to 120Hz 1.1 1.1 mV/℃ 1.1 Conditio ns VC,IH μA μA Conditio ns IS1 V VIN=3.3V VIN=3.3V 2.2 A VIN=5V 2.2 dB 2.2 V VC,IL 0.8 0.8 0.8 IC,IH Conditio ns 40 40 40 IC,IL Conditio ns VC=2V -5 0 VC=0V VC=2V -5 0 VC=0V VC=2V -5 0 μA VC=0V *1: Refer to the clause of a difference in input and output voltage. *2: Is1 is specified at the 5% drop point of output voltage Vo on the condition that VIN = overcurrent protection starting current, Io = 10mA. *3: Output is OFF when the output control terminal Vc is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. Attention … As PD=(VIN－Vo)×Io, VIN(MAX) and Io(MAX) must be referred to the data of P17, copper area vs power dissipation upon actual applications. 6 SI-3000KM 2-2-3 Electrical Characteristics(2) （SI-3010KM,SI-3050KM,SI-3090KM） Ta = 25°C Ratings Parameter Symbol SI-3010KM(Vo adjustable) min Input Voltage VIN VO or (Vadj) Conditio ns Output Voltage Settings typ max 2.4*1 (0.98) (1.00) (1.02) VIN=7V, Io=0 to 1A(Vo=5V) VDIF1 Conditio ns Io=0.5A(Vo=5V) Temperature Coefficient of Output Voltage Ripple Rejection Overcurrent Protection Starting Current*2 VC Termin al Control Voltage (Output ON)*3 Control Voltage (Output OFF) Control Current (Output ON) Control Current (Output OFF) Input Overvoltage Shutdown Voltage min typ Units max 5.00 5.10 V 8.82 9.00 9.18 V ⊿ VOLOAD Conditio ns Circuit Current at Output OFF SI-3090KM max VIN=7V,Io=10mA Load Regulation VIN=11V,Io=10mA 30 75 54 mV VIN=6 to 11V, Io=10mA(Vo=5V) VIN=6 to 11V,Io=10mA 75 VIN=10 to 15V,Io=10mA 40 40 mV VIN=7V, Io=0 to 1A 0.3 0.3 0.6 Io=1A 600 VIN=7V,Io=0A,VC=2V, R2=10kΩ VIN=7V,Io=0A,VC=2V 600 VIN=11,Io=0A,VC=2V 1 μA VIN=7V,VC=0V VIN=7V,VC=0V VIN=11V,VC=0V ⊿Vo/ ⊿Ta ±0.5 ±0.5 ±1.0 Conditio ns Tj=0 to 100℃(Vo=5V) Tj=0 to 100℃ Tj=0 to 100℃ RREJ 75 75 68 Conditio ns VIN=7V,f=100 to 120Hz,Vo=5V VIN=7V,f=100 to 120Hz VIN=11V,f=100 to 120Hz mV/℃ 1.1 Conditio ns VC,IH μA 1 Conditio ns IS1 V Io=1A 600 1 Iq(OFF) 0.3 Io=0.5A 0.6 Io=1A(Vo=5V) Iq VIN=11V, Io=0 to 1A Io=0.5A 0.6 VDIF2 Conditio ns Conditio ns typ *1 4.90 VIN=7V,Io=10mA ⊿ VOLINE Conditio ns Quiescent Circuit Current min *1 Line Regulation Dropout Voltage SI-3050KM 1.1 VIN=7V 1.1 VIN=7V 2.0 dB A VIN=11V 2.0 2.0 V 0.8 VC,IL 40 IC,IH Conditio ns -5 VOVP 33 0 40 VC=2V -5 VC=0V 0 VC=2V -5 VC=0V 26 Io=10mA 0.8 40 VC=2V IC,IL Conditio ns Conditio ns 0.8 0 μA VC=0V 30 Io=10mA Io=10mA V *1: Refer to the clause of a difference in input and output voltage. *2: Is1 is specified at the 5% drop point of output voltage Vo on the condition that VIN = overcurrent protection starting current, Io = 10mA. *3: Output is OFF when the output control terminal Vc is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. Attention … SI-3010KM,SI-3050KM,SI-3090KM cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage; 7 SI-3000KM (1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) Vo adjustment by raising ground voltage As PD=(VIN－Vo)×Io, VIN(MAX) and Io(MAX) must be referred to the data of P17, copper area vs power dissipation upon actual applications. 2-2-3 Electrical Characteristics(3) （SI-3120KM） Ratings Parameter SI-3120KM Symbol min Input Voltage VIN VO or (Vadj) Conditio ns Output Voltage Settings typ max *1 V 11.76 12.00 12.24 V VIN=7V,Io=10mA Line Regulation ⊿ VOLINE Conditio ns Load Regulation ⊿ VOLOAD Conditio ns VIN=14V, Io=0 to 1A VDIF1 Conditio ns Io=0.5A Dropout Voltage Quiescent Circuit Current Circuit Current at Output OFF Temperature Coefficient of Output Voltage Ripple Rejection Overcurrent Protection Starting Current*2 VC Termin al Control Voltage (Output ON)*3 Control Voltage (Output OFF) Control Current (Output ON) Control Current (Output OFF) Input Overvoltage Shutdown Voltage 72 mV VIN=13 to 18V, Io=10mA 180 mV 0.3 0.6 VDIF2 Conditio ns 600 Iq VIN=14V,Io=0A,VC=2V, Iq(OFF) 1 μA μA Conditio ns VIN=7V,VC=0V ⊿Vo/ ⊿Ta ±1.5 Conditio ns Tj=0 to 100℃ RREJ Conditio ns VIN=14V,f=100 to 120Hz mV/℃ 66 dB 1.1 Conditio ns VC,IH V Io=1A Conditio ns IS1 Ta = 25°C Units A VIN=14V 2.0 V VC,IL 0.8 IC,IH Conditio ns 40 VC=2V IC,IL Conditio ns -5 VOVP 33 Conditio ns 0 μA VC=0V Io=10mA V *1: Refer to the clause of a difference in input and output voltage. *2: Is1 is specified at the 5% drop point of output voltage Vo on the condition that VIN = overcurrent protection starting current, Io = 10mA. *3: Output is OFF when the output control terminal Vc is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs. 8 SI-3000KM Attention … SI-3120KM cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage; (1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) Vo adjustment by raising ground voltage As PD=(VIN－Vo)×Io, VIN(MAX) and Io(MAX) must be referred to the data of P17, copper area vs power dissipation upon actual applications. 9 SI-3000KM ● 2-3 Circuit Diagram 2-3-1 Block Diagram （SI-3010KM,SI-3012KM） （SI-3025KM,SI-3033KM,SI-3050KM,SI-3090KM,SI-3120KM） 2-3-2 Typical Connection Diagram Load （SI-3010KM,SI-3012KM） Load （SI-3025KM,SI-3033KM,SI-3050KM,SI-3090KM,SI-3120KM） *1 For SI-3012KM,SI-3025KM,SI-3033KM. It is the setup to use a ultra-low ESR capacitor such as a ceramics-capacitor for Co with these models. When an electrolytic-capacitor is used for Co, they may oscillate at low-temperature. *1 For SI-3010KM,SI-3050KM,SI-3090KM,SI-3120KM. As for these models,they may oscillate when a ultra-low ESR capacitor such as ceramic-capacitor is used for Co. 10 SI-3000KM *2: D1: Reverse biased protection diodes In the case of reverse bias between input and output, this diode will be required. (Recommended diodes: SJPL-H2 made by Sanken) It is unnecessary in case of Vo≦3.3V. R1, R2: resistors for setting output voltages Output voltages can be adjusted by connecting R1 and R2 as shown in the above figure. R2: 10kΩ is recommended.(In case of the SI-3120KM,24kΩ is recommended.) R1=(Vo-VADJ) /（VADJ /R2） *3: In the case that Vo ≦ 1.5V is set, R3 should be inserted. 10kΩ is recommended for R3. Regardless of the setup voltage, R3 is unnecessary in case of the SI-3012KM. 11 SI-3000KM 3. Operational Description ● 3-1 Voltage Control In the SI-3000KM series, the driving circuit is controlled by comparing the reference voltage with the ADJ terminal voltage (voltage divided by Vo detection resistor in fixed output products) to stabilize the output voltage by varying the voltage between the emitter and collector of a main PNP power transistor. The product of voltage between emitter and collector and the output current at this moment is consumed as heat. ● 3-2 Overcurrent Protection 3-2-1 Overcurrent Protection Characterization for SI-3012KM,SI-3025KM,SI-3033KM The Drooping type overcurrent protection function is provided in these models. In the case of the series regulator, as the output voltage drops subject to the overcurrent protection, the difference of input/output voltages increases to cause significant heating. Special care should be taken for the current limiting type overcurrent protection, since large current flows continuously. Output Voltage <Example of Drooping type overcurrent protection characteristic> Output Current 3-2-2 Overcurrent Protection Characterization for SI-3010KM,SI-3050KM,SI-3090KM,SI-3120KM The foldback type overcurrent protection function is provided in these models. After operation of the overcurrent protection function, if the load resistance decreases and the output voltage drops, the output current of products is squeezed to reduce the increase of loss. However, in the case of the foldback type overcurrent protection function, since current limiting is also made at start-up, the function may not be used for the following applications, as it may cause a start-up error. (1) Constant current loads (2) Plus/minus power supply (3) DC power supply (4) Output voltage adjustment by grounding-up Output voltage 出力電圧 < Example of Foldback Overcurrent Protection> 出力電流 Output Current 12 SI-3000KM ● 3-3 Thermal Shutdown This IC is provided with the overheat protection circuit which detects the semiconductor junction temperature of the IC to limit the driving current, when the junction temperature exceeds the set value (around 150°C). Since the minimum operating temperature of the overheat protection circuit is 130°C, the thermal design of Tj <125°C is required. Since the overheat protection has no hysteresis, as soon as the overload state is released and Tj falls below the set temperature, the normal operation is automatically restored. When the overheat protection function is operated in the overload state, the output voltage falls, but at the same time the output current is decreased and in the consequence, overheat protection operation and automatic restoration are repeated in a short interval, resulting eventually in the waveforms of output voltage oscillation. Output voltage 出力電圧 <Example of Thermal Shutdown> Junction Temperature ｼﾞｬﾝｸｼｮﾝ温度 *Note for thermal shutdown characteristic This circuit protects the IC against overheat resulting from the instantaneous short circuit, but it should be noted that this function does not assure the operation including reliability in the state that overheat continues due to long time short circuit. 13 SI-3000KM 4. Cautions ● 4-1 External Components 4-1-1 Input Capacitor CIN The input capacitor is required to eliminate noise and stabilize the operation and values of 0.47μF - 22μF are recommended. Any of ceramic capacitors or electrolytic ones may be used for the input capacitor. 4-1-2 Output Capacitor Co Co for SI-3010KM,SI-3050KM,SI-3090KM,SI-3120KM In the output capacitor Co, larger capacitance than the recommended value is required for phase compensation. Equivalent series resistance values (ESR) of capacitors are limited, and depending on products, therefore the type of recommended capacitors is limited. Recommended ESR values for SI-3010KM,SI-3050KM,SI-3090KM,SI-3120KM: 2Ω > ESR > 0.2Ω It is recommended to use electrolytic capacitors. When capacitors with ultra-low ESR such as ceramic capacitors, functional polymer capacitors,OS-capacitors etc., are used, phase margin is decreased, possibly causing the oscillation of output voltage. Therefore these capacitors can not be used. Co for SI-3012KM,SI-3025KM,SI-3033KM Using a ceramics capacitor and a function polymer capacitor, OS-capacitor etc., is recommended. As for these models,when a big-ESR capacitor such as electrolytic-capacitors was used, phase margin is decreased and possibly causing the oscillation of output voltage. ESR's increase in the low temperature condition. Therefore, an electrolytic-capacitor can't be recommended because output may oscillate at a low temperature even when the output doesn't oscillate at a room temperature. 4-1-3 Reverse bias protection diode D1 In the case of falling-down of the input voltage, it is recommended to insert a protection diode D1 against the reverse bias between input and output. However, in the case of setting the Vout < 3.3V or lower, D1 is not required including the case of reverse bias. In order to select a suitable D1, it should be taken into consideration that the diode has adequate forward current withstand voltage against the instantaneous discharge of energy stored in output capacitor Co. The permissible value of the forward current per unit time of diode is specified in IFSM (A) and in the case of our diode, it is specified at 50Hz half wave (10ms), but it should be noted that different companies may specify different times. The selection of diode should be made by converting the specified time into the actual discharging time so as to meet the required IFSM (A). The discharging time of Co is normally shorter than 1ms, but it is recommended to do the conversion with 1ms in consideration of margin. For conversion into IFSM, calculation should be made by using the equations (1) and (2). 2 I FSM t1 X 2 --- (1) As for IFSM, please refer to the catalog of each company. t1 = specified time in catalog of each company Converted IFSM＝ 2 X t2 --- (2) t2: converted time (discharging time of Co) 14 SI-3000KM <Graph 1> Idis A Charge at 5V CoCo vs Idis（放電電流） vs. Idis (discharge current) Reference 120 100 80 60 40 20 0 1 10 100 1000 Co uF On the assumption of Cout = 470μF, IFSM of around 90A or more (in 1ms time period) is required and according to our specifications of diode, IFSM is specified for 10ms, therefore the diode of 30A has the tolerated dose of 94.8A (in 1ms) to prove that it is usable. ● 4-2 Pattern Design Notes 4-2-1 Input / Output Capacitor The input capacitor C1 and the output capacitor C2 should be connected to the IC as close as possible. If the rectifying capacitor for AC rectifier circuit is on the input side, it can be used as an input capacitor. However, if it is no close to the IC, the input capacitor should be connected in addition to the rectifying capacitor. 4-2-2 ADJ Terminal (Output Voltage Set-up for SI-3010KM & SI-3012KM) The ADJ terminal is a feedback detection terminal for controlling the output voltage. The output voltage set-up is achieved by connecting R1 and R2. SI-3010KM: it should be set in a manner that IADJ is around 100μA. SI-3012KM: it should be set in a manner that IADJ is around 50μA. R1, R2 and output voltage can be obtained by the following equations: IADJ=VADJ/R2 *VADJ = 1. 0V ± 2% (SI-3010KM), R2 = 10kΩ recommended *VADJ = 1. 28V ± 3% (SI-3012KM), R2 = 24kΩ recommended R1 = (Vo-VADJ) / IADJ R2 = VADJ / IADJ Vout = R1× (VADJ / R2) + VADJ 15 SI-3000KM 5. Applications ● 5-1 Output ON / OFF Control The ON/OFF control of output can be made by directly applying voltage to No. 1 Vc terminal. When the Vc terminal is open, the operation is in OFF. The Vc terminal is in OFF below 0.8V and in ON at above 2V. ● 5-2 Thermal Design 5-2-1 Calculation of heat dissipation Heat generation of the surface mounting IC is generally dependent on size, material and copper foil area of the mounted printed circuit board. Full attention should be paid to heat dissipation and adequate margin be taken into consideration at thermal design. In order to enhance the heat dissipation effect, it is recommended to enlarge the copper foil area connected to the stem part on the back side of the product. The copper foil area of the printed circuit board significantly affects the heat dissipation effect. As the junction temperature Tj (MAX) is an inherent value, it must be observed strictly. For this purpose, heat sink design (thermal resistance of board) which is appropriate for Pd (MAX) and Ta MAX is required. This is graphically shown in the heat derating curve for easy understanding. The heat dissipation design is done in the following procedure. 1) The maximum ambient temperature in the set Ta MAX is obtained. 2) The maximum loss PdMAX which varies the input/output conditions is obtained. Pd = (VIN - Vout) × Iout 3) The area of copper foil is determined from the intersection point in the heat derating curve below shown. 16 SI-3000KM For reference information, the graph of copper foil area vs. thermal resistance between junction temperature and ambient temperature θj-a and the graph of copper foil area vs. permissible dissipation that both are in the single side copper foil board FR - 4 are shown below. 17 SI-3000KM 6. Typical Characteristics 6.1 SI-3012KM (Ta = 25°C) *Set Vout = 2.5V (R2 = 24kΩ) 18 SI-3000KM 19 SI-3000KM 6.1 SI-3010KM (Ta = 25°C) *Set Vout = 5V (R2 = 10kΩ) 20 SI-3000KM 21 SI-3000KM Notice ・ The contents of this description are subject to change without prior notice for improvement etc. Please make sure that any information to be used is the latest one. ・ Any example of operation or circuitry described in this application note is only for reference, and we are not liable to any infringement of industrial property rights, intellectual property rights or any other rights owned by third parties resulting from such examples. ・ In the event that you use any product described here in combination with other products, please review the feasibility of combination at your responsibility. ・ Although we endeavor to improve the quality and reliability of our product, in the case of semi-conductor components, defects or failures which occur at a certain rate of probability are inevitable. The user should take into adequate consideration the safety design in the equipment or the system in order to prevent accidents causing death or injury, fires, social harms etc.. ・ Products described here are designed to be used in the general-purpose electronic equipment (home appliances, office equipment, communication terminals, measuring equipment etc.). If used in the equipment or system requiring super-high reliability (transport machinery and its control equipment, traffic signal control equipment, disaster/crime prevention system, various safety apparatus etc.), please consult with our sales office. Please do not use our product for the equipment requiring ultrahigh reliability (aerospace equipment, atomic control, medical equipment for life support etc.) without our written consent. ・ The products described here are not of radiation proof type. ・ The contents of this brochure shall not be transcribed nor copied without our written consent. 22