HVGT HVC10F 10kV 200mA HIGH VOLTAGE DIODES Outline Drawings : mm HVC10F is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features High speed switching High Current 26 min. High surge resisitivity for CRT discharge 10 26 min. High reliability design DO-310 RoHS corresponding products Cathode Mark Applications X light Power supply Type Mark Laser Voltage doubler circuit Microwave emission power HVC10F Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition HVC10F Units 10 kV 200 mA I FSM 20 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 120 °C Storage Temperature Tstg -40 to +125 °C Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions HVC10F Units Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 20 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C 80 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014