GH50-15J 500mA 15kV 50nS-High Voltage Power Diodes Ultra-Fast Recovery High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : Features GH HVG 50- T 15J High speed switching Epoxy resin molded in vacuum, Have anticorrosion in the surface High surge resisitivity for CRT discharge High reliability design Avalanche characteristic Applications X light Power supply Laser DO-722 Series Voltage doubler circuit Lead Diameter 1.2mm Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. 7.5mm 22mm 24mm Maximum Ratings and Characteristics Absolute Maximum Ratings Symbols Items Repetitive Peak Renerse Voltage V RRM IO Average Output Current I FSM Suege Current Condition GH50-15J Units Ta=25°C, I R =0.1mA 15 kV Ta=25°C,Resistive Load 0.5 A peak Ta=25°C,8.3msec, half sine 20 A peak Junction Temperature Tj 150 °C Allowable Operation Case Temperature Tc 150 °C Storage Temperature Tstg -40 to +150 °C GH50-15J Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IFM =500mA 16 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 0.5 uA IR2 at 125°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C; I F =0.5A; 50 nS Junction Capacitance Cj at 25°C; V R=0V,f=1MHz 8.0 pF GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: I R =1.0A; n Irr =250mA; Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 01