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GH50-15J
500mA 15kV 50nS-High Voltage Power Diodes Ultra-Fast Recovery
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
GH HVG
50- T
15J
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
DO-722 Series
Voltage doubler circuit
Lead Diameter 1.2mm
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
7.5mm
22mm
24mm
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
Repetitive Peak Renerse Voltage
V RRM
IO
Average Output Current
I FSM
Suege Current
Condition
GH50-15J
Units
Ta=25°C, I R =0.1mA
15
kV
Ta=25°C,Resistive Load
0.5
A peak
Ta=25°C,8.3msec, half sine
20
A peak
Junction Temperature
Tj
150
°C
Allowable Operation Case Temperature
Tc
150
°C
Storage Temperature
Tstg
-40 to +150
°C
GH50-15J
Units
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IFM =500mA
16
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
0.5
uA
IR2
at 125°C,V R =VRRM
50
uA
Maximum Reverse Recovery Time
Trr
at 25°C; I F =0.5A;
50
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
8.0
pF
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
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E-mail: [email protected]
4001 83 84 85
China Tel:
I R =1.0A;
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Irr =250mA;
Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
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www.getedz.com
www.hvgtsemi.com
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