HCS154MS Features The Intersil HCS154MS is a Radiation Hardened 4 to 16 line Decoder/Demultiplexer with two enable inputs. A high on either enable input forces the output to a high state. The Demultiplexing function is performed by using the four input lines A0 to A3 to select the desired output states. • • • • The HCS154MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS154MS is supplied in a 24 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). • • • • • • • • 3 Micron Radiation Hardened SOS CMOS Total Dose 200k RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 Rads (Si)/s Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) Latch-Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min • Input Current Levels Ii ≤ 5µA at VOL, VOH Pin Configurations 24 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F24 TOP VIEW 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW Y0 1 24 VCC Y0 1 24 VCC Y1 2 23 A0 Y1 2 Y2 3 22 A1 Y2 3 23 22 Y3 4 21 A2 Y3 4 Y4 5 20 A3 Y4 5 19 E2 Y5 6 Y5 6 A0 A1 A2 A3 E2 Y6 7 Y6 7 18 E1 Y7 8 Y7 8 17 Y15 9 Y8 Y8 Y9 9 16 Y14 Y9 10 15 Y13 Y10 11 14 Y12 GND 12 13 Y11 Y10 GND 21 20 19 18 17 16 11 15 14 12 13 10 E1 Y15 Y14 Y13 Y12 Y11 Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER PART MARKING TEMP. RANGE (°C) SCREENING LEVEL PACKAGE PKG. DWG. # 5962R9572901VJC HCS154DMSR Q 5962R95 72901VJC -55oC to +125oC Intersil Class S 24 Ld SBDIP Equivalent 5962R9572901VXC HCS154KMSR Q 5962R95 72901VXC -55oC to +125oC Intersil Class S 24 Ld Ceramic Flatpack K24.A Equivalent January 6, 2011 FN2479.3 1 D24.6 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 1995, 2011. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HCS154MS Radiation Hardened 4 to 16 Line Decoder/Demultiplexer HCS154MS Functional Diagram TABLE 1. TRUTH TABLE INPUTS OUTPUTS E1 E2 A3 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15 L L L L L L L H H H H H H H H H H H H H H H L L L L L H H L H H H H H H H H H H H H H H L L L L H L H H L H H H H H H H H H H H H H L L L L H H H H H L H H H H H H H H H H H H L L L H L L H H H H L H H H H H H H H H H H L L L H L H H H H H H L H H H H H H H H H H L L L H H L H H H H H H L H H H H H H H H H L L L H H H H H H H H H H L H H H H H H H H L L H L L L H H H H H H H H L H H H H H H H L L H L L H H H H H H H H H H L H H H H H H L L H L H L H H H H H H H H H H L H H H H H L L H L H H H H H H H H H H H H H L H H H H L L H H L L H H H H H H H H H H H H L H H H L L H H L H H H H H H H H H H H H H H L H H L L H H H L H H H H H H H H H H H H H H L H L L H H H H H H H H H H H H H H H H H H H L L H X X X X H H H H H H H H H H H H H H H H H L X X X X H H H H H H H H H H H H H H H H H H X X X X H H H H H H H H H H H H H H H H NOTE: H = High Level, L = Low Level, X = Immaterial 2 FN2479.3 January 6, 2011 HCS154MS Absolute Maximum Ratings Reliability Information Supply Voltage. . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . -0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . ±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . ±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . -65°C to +150°C Lead Temperature (Soldering 10sec) . . . . . . . . . . . +265°C Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . +175°C ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package . . . . . . . . . . . . . . 63°C/W 23°C/W Ceramic Flatpack Package . . . . . . . 87°C/W 23°C/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . 0.79W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . 0.57W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package . . . . . . . . . . . . . . . . . . . . . . 15.9mW/°C Ceramic Flatpack Package . . . . . . . . . . . . . . . 11.5mW/°C Operating Conditions Supply Voltage . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns MaxOperating Temperature Range (TA) . . . -55°C to +125°C Input Low Voltage (VIL) . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . 70% of VCC to VCC CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. DC Electrical Specifications SYMBOL ICC IOL IOH VOL VOH IIN FN CONDITIONS (Note 1) LIMITS GROUP A SUBGROUPS TEMPERATURE 1 +25°C - 40 µA 2, 3 +125°C, -55°C - 750 µA 1 +25°C 4.8 - mA 2, 3 +125°C, -55°C 4.0 - mA 1 +25°C -4.8 - mA 2, 3 +125°C, -55°C -4.0 - mA Output Voltage Low VCC = 4.5V, VIH = 3.15V, IOL = 50μA, VIL = 1.35V 1, 2, 3 +25°C, +125°C, -55°C - 0.1 V VCC = 5.5V, VIH = 3.85V, IOL = 50μA, VIL = 1.65V 1, 2, 3 +25°C, +125°C, -55°C - 0.1 V VCC = 4.5V, VIH = 3.15V, IOH = -50μA, VIL = 1.35V 1, 2, 3 +25°C, +125°C, -55°C VCC -0.1 - V VCC = 5.5V, VIH = 3.85V, IOH = -50μA, VIL = 1.65V 1, 2, 3 +25°C, +125°C, -55°C VCC -0.1 - V Input Leakage Current VCC = 5.5V, VIN = VCC or GND 1 +25°C - ±0.5 µA 2, 3 +125°C, -55°C - ±5.0 µA Noise Immunity Functional Test VCC = 4.5V, VIH = 0.70(VCC), (Note 2) VIL = 0.30(VCC) 7, 8A, 8B +25°C, +125°C, -55°C - - - PARAMETERS Quiescent Current VCC = 5.5V, VIN = VCC or GND Output Current (Sink) VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V Output Current (Source) VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V Output Voltage High MIN MAX UNITS NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. 3 FN2479.3 January 6, 2011 HCS154MS AC Electrical Specifications SYMBOL TPLH CONDITIONS (Notes 3, 4) PARAMETER Address to Output TPHL VCC = 4.5V VCC = 4.5V TPLH TPHL Enable to Output VCC = 4.5V LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25°C 2 29 ns 10, 11 +125°C, -55°C 2 34 ns 9 +25°C 2 27 ns 10, 11 +125°C, -55°C 2 31 ns 9 +25°C 2 27 ns 10, 11 +125°C, -55°C 2 27 ns NOTES: 3. All voltages referenced to device GND. 4. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. Electrical Specifications The following parameters are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. LIMITS SYMBOL CPD CIN TTHL TTLH PARAMETER CONDITIONS Capacitance Power Dissipation VCC = 5.0V, f = 1MHz Input Capacitance VCC = 5.0V, f = 1MHz Output Transition Time NOTES TEMPERATURE MIN MAX UNITS 1 +25°C - 66 pF 1 +125°C, -55°C - 74 pF 1 +25°C - 10 pF 1 +125°C - 10 pF 1 +25°C - 15 ns 1 +125°C - 22 ns VCC = 4.5V DC Post Radiation Electrical Performance Characteristics CONDITIONS (Notes 5, 6) 200k RAD LIMITS TEMPERATURE MIN MAX UNITS ICC Quiescent Current VCC = 5.5V, VIN = VCC or GND +25°C - 0.75 mA IOL Output Current (Sink) VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25°C 4.0 - mA IOH Output Current (Source) VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25°C -4.0 - mA VOL Output Voltage Low VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50μA +25°C - 0.1 V VOH Output Voltage High VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50μA +25°C VCC -0.1 - V SYMBOL PARAMETERS IIN Input Leakage Current VCC = 5.5V, VIN = VCC or GND +25°C - ±5 µA FN Noise Immunity Functional Test VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 7) +25°C - - - Address to Output VCC = 4.5V +25°C 2 34 ns VCC = 4.5V +25°C 2 31 ns VCC = 4.5V +25°C 2 27 ns TPLH TPHL TPLH TPHL Enable to Output NOTES: 5. All voltages referenced to device GND. 6. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 7. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. 4 FN2479.3 January 6, 2011 HCS154MS TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25°C) GROUP B SUBGROUP DELTA LIMIT ICC PARAMETER 5 12μA IOL/IOH 5 -15% of 0 Hour TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS READ AND RECORD Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 8) Group B ICC, IOL/H Group D Subgroups 1, 2, 3, 9, 10, 11 NOTE: 8. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 See “DC Post Radiation Electrical Performance Characteristics” table on page 4 1, 9 See “DC Post Radiation Electrical Performance Characteristics” table on page 4 (Note 9) NOTE: 9. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 24 - - - 18 - 24 - - 1 - 11, 13 - 17 24 23 22 STATIC BURN-IN I TEST CONDITIONS (Note 10) 1 - 11, 13 - 17 12, 18 - 23 STATIC BURN-IN II TEST CONNECTIONS (Note 10) 1 - 11, 13 - 17 12 DYNAMIC BURN-IN I TEST CONNECTIONS (Note 11) - 12, 18 - 21 NOTES: 10. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in. 11. Each pin except VCC and GND will have a resistor of 1kΩ ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 1 - 11, 13 - 17 12 18 - 24 NOTE: Each pin except VCC and GND will have a resistor of 47kΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. 5 FN2479.3 January 6, 2011 HCS154MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125°C min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 12 and 13) 100% Dynamic Burn-In, Condition D, 240 hrs., +125°C or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 13) 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125°C min., Method 1015 100% Radiographic, Method 2012 (Note 14) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 15) 100% Data Package Generation (Note 16) NOTES: 12. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 13. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 14. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 15. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 16. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. 6 FN2479.3 January 6, 2011 HCS154MS AC Timing Diagrams AC Load Circuit DUT TEST POINT VIH INPUT VS CL RL VIL TPLH TPHL VOH CL = 50pF VS RL = 500Ω OUTPUT VOL TTHL TTLH VOH 80% 20% VOL 80% 20% OUTPUT TABLE 10. AC VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VIL 0 V GND 0 V 7 FN2479.3 January 6, 2011 HCS154MS Die Characteristics GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ DIE DIMENSIONS: 85 x 101 mils 2.16 x 2.57mm WORST CASE CURRENT DENSITY: 2.0 x 105A/cm2 METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCS154MS Y1 (2) Y0 (1) VCC (24) A0 (23) A1 (22) Y2 (3) Y3 (4) (21) A2 Y4 (5) (20) A3 (19) E2 Y5 (6) Y6 (7) (18) E1 Y7 (8) (17) Y15 Y8 (9) (16) Y14 Y9 (10) (11) Y10 (12) GND (13) Y11 (14) Y12 (15) Y13 For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 8 FN2479.3 January 6, 2011