Doc No. TT4-EA-11905 Revision. 3 Product Standards Switching Diode DA4X101F0R DA4X101F0R Silicon epitaxial planar type Unit: mm 2.9 (0.95)(0.95) For high speed switching circuits 0.13 4 Features 1.5 2.8 Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 3 1 2 0.65 (0.2) 1.9 Marking Symbol: 22 Basic Part Number : 0.4 1.1 Dual DA2J101 (Parrarel, oppositely arranged) Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Maximum peak reverse voltage Single Forward current (Average) Double Repetitive peak Single forward current Double Single Non-repetitive peak Double forward surge current *1 Junction temperature Operating ambient temperature Storage temperature Note) VR VRM IF(AV) IFRM IFSM Tj Topr Tstg 1. Anode 1 2. Cathode 2 Mini4-G4-B SC-61AB TO-253/SOT-143 Panasonic JEITA Code Rating Unit 80 80 100 75 225 170 500 375 150 -40 to +85 -55 to +150 V V mA 3. Anode 2 4. Cathode 1 Internal Connection 4 3 1 2 mA mA °C °C °C *1: t = 1 s Page 1 of 4 Established : 2009-11-26 Revised : 2013-06-19 Doc No. TT4-EA-11905 Revision. 3 Product Standards Switching Diode DA4X101F0R Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time Note) VF VR IR Ct *1 trr Conditions Min IF = 100 mA IR = 100 μA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA , VR = 6 V Irr = 0.25 x IR Typ Max Unit 0.95 1.20 0.9 100 2.0 V V nA pF 3 ns 80 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 μs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.25 × IR IF = 10 mA VR = 6 V Page 2 of 4 Established : 2009-11-26 Revised : 2013-06-19 Doc No. TT4-EA-11905 Revision. 3 Product Standards Switching Diode DA4X101F0R Technical Data ( reference ) IF - VF IR - VR 1.E-05 Ta = 125 °C 1.E-01 Reverse current IR (A) Forward current IF (A) 1.E+00 1.E-02 85 °C 1.E-03 25 °C 1.E-04 1.E-05 1.E-06 0.0 -40 °C IR value is not exceeding 100 pA at -40 °C 1.E-06 Ta = 125 °C 85 °C 1.E-07 1.E-08 25 °C 1.E-09 1.E-10 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0 20 40 60 80 Reverse voltage VR (V) Ct - VR Terminal capacitance Ct (pF) 1.2 Ta = 25 °C f = 1 MHz 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2009-11-26 Revised : 2013-06-19 Doc No. TT4-EA-11905 Revision. 3 Product Standards Switching Diode DA4X101F0R Mini4-G4-B Unit: mm +0.20 2.90-0.05 +0.05 0.13-0.02 (0.95) (0.95) +0.10 0.40-0.05 +0.10 0.65-0.05 (6°) +0.2 0.4±0.2 (0.2) 2 (0.65) 1 2.8-0.3 +0.25 3 1.50-0.05 4 1.9±0.1 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (8°) Land Pattern (Reference) (Unit: mm) 1.0 2.4 1.9 1.0 Page 4 of 4 Established : 2009-11-26 Revised : 2013-06-19 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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