HV55G30 55mA 30kV 100nS-High Voltage Power Diodes High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : VV Features VV High speed switching Epoxy resin molded in vacuum, Have anticorrosion in the surface High surge resisitivity for CRT discharge High reliability design Avalanche characteristic Applications X light Power supply Laser DO-312 Series Voltage doubler circuit Lead Diameter 0.6mm Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. 3.0mm 12mm 27mm Maximum Ratings and Characteristics Absolute Maximum Ratings Symbols Items Repetitive Peak Renerse Voltage V RRM IO Average Output Current I FSM Suege Current Condition HV55G30 Units Ta=25°C, I R =0.1mA 30 kV Ta=25°C,Resistive Load 55 mA Ta=25°C,8.3msec, half sine 3.0 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +125 °C HV55G30 Units 48 V Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions at: I F Maximum Forward Voltage Drop VF at 25°C, Maximum Reverse Current IR1 at 25°C,VR =VRRM 1.0 uA IR2 at 100°C,V R =VRRM 10 uA Maximum Reverse Recovery Time Trr at 25°C; I F =0.5I R; I R =I F (AV); 100 nS Junction Capacitance Cj at 25°C; V R=0V,f=1MHz 0.8 pF GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: n Irr =0.25I R Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 01