PANASONIC DA3J101F0L

Doc No. TT4-EA-11766
Revision. 3
Product Standards
Switching Diode
DA3J101F0L
DA3J101F0L
Silicon epitaxial planar type
Unit: mm
For high speed switching circuits
DA3X101F in SMini3 type package
2.0
0.3
0.13
3
 Features
1.25
2.1
 Small reverse current IR
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
0.9
 Marking Symbol: 22
(0.65)(0.65)
1.3
 Basic Part Number :
Dual DA2J101 (Series)
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak
forward surge current *1
Junction temperature
Operating ambient temperature
Storage temperature
Note)
VR
VRM
Single
Series
Single
Series
Single
Series
IF
IFM
IFSM
Tj
Topr
Tstg
Rating
Unit
80
80
100
65
225
145
500
325
150
-40 to +85
-55 to +150
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
1. Anode1
2. Cathode2
3. Cathode1
Anode2
Panasonic
JEITA
Code
SMini3-F2-B
SC-85
―
Internal Connection
3
1
2
*1: t = 1 s
Page 1 of 4
Established : 2009-11-05
Revised
: 2013-06-04
Doc No. TT4-EA-11766
Revision. 3
Product Standards
Switching Diode
DA3J101F0L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
Note)
VF
VR
IR
Ct
*1
trr
Conditions
Min
IF = 100 mA
IR = 100 μA
VR = 80 V
VR = 0 V , f = 1 MHz
IF = 10 mA, VR = 6V
Irr = 0.25 x IR
Typ
Max
Unit
0.92
1.20
100
1.2
V
V
nA
pF
3
ns
80
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *1: trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.25 × IR
IF = 10 mA
VR = 6 V
Page 2 of 4
Established : 2009-11-05
Revised
: 2013-06-04
Doc No. TT4-EA-11766
Revision. 3
Product Standards
Switching Diode
DA3J101F0L
Technical Data ( reference )
IF - VF
IR - VR
1.E-05
Ta = 125 °C
1.E-01
Reverse current IR (A)
Forward current IF (A)
1.E+00
1.E-02
85 °C
1.E-03
25 °C
1.E-04
1.E-05
1.E-06
0.0
-40 °C
IR value is not exceeding
100 pA at -40 °C
1.E-06
Ta = 125 °C
85 °C
1.E-07
1.E-08
25 °C
1.E-09
1.E-10
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
0
20
40
60
80
Reverse voltage VR (V)
Ct - VR
Terminal capacitance Ct (pF)
1.2
Ta = 25 °C
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
Reverse voltage VR (V)
Page 3 of 4
Established : 2009-11-05
Revised
: 2013-06-04
Doc No. TT4-EA-11766
Revision. 3
Product Standards
Switching Diode
DA3J101F0L
SMini3-F2-B
Unit: mm
2.0±0.2
+0.05
0.13-0.02
+0.05
0.30-0.02
(5°)
2
(0.65) (0.65)
1.3±0.1
0.425±0.050
1
2.1±0.1
1.25±0.10
3
(0.49)
0.9±0.1
0 to 0.1
(0.89)
(5°)
 Land Pattern (Reference) (Unit: mm)
1.9
0.8
0.9
1.3
Page 4 of 4
Established : 2009-11-05
Revised
: 2013-06-04
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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