DMA30401 Tentative Total pages page DMA30401 Silicon PNP epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Marking Symbol : A7 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Tr1 Emitter-base voltage (Collector open) Tr2 Collector current Peak collector current Total power dissipation *1 Overall Junction temperature Storage temperature Symbol Rating Unit VCBO VCEO VEBO IC ICp PT Tj Tstg -60 -50 -7 -100 -200 125 150 -55 to +150 V V V mA mA mW °C °C Note: 1. *1 Measuring on substrate at 17 mm × 10 mm × 1 mm 5 4 Tr 1 Tr 2 1 2 3 Pin name 1. Emitter(Tr1) 2. Base(Tr1) 3. Collector(Tr2) 4. Emitter(Tr2) 5. Base(Tr2) 6. Collector(Tr1) Electrical Characteristics Ta = 25 °C ±3 °C Tr1, Tr2 Parameter Symbol Conditions Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = -10 μA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IB = 0 Forward current transfer ratio hFE VCE = -10 V, IC = -2mA Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -10 mA Transition frequency fT VCE = -10 V, IC = -2 mA Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz (Common base, input open circuited) Min Typ Max -60 -50 -7 210 -0.2 150 -0.1 -100 460 -0.5 2 Unit V V V μA μA V MHz pF Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 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