PANASONIC DA2J108

This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
Silicon epitaxial planar type
For small current recitification
 Features

Package
 Small reverse current IR
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package

Code
SMini2-F5-B

Pin Name
1: Cathode
2: Anode
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

Marking Symbol: A2
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VR
300
V
Maximum peak reverse voltage
VRM
300
V
Output current (Average)
IO(AV)
200
mA
Repetitive peak forward current
IFRM
600
mA
Non-repetitive peak forward surge current *
IFSM
1
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Reverse voltage
Note) *: 1 t = 1 s
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Forward voltage (DC)
Reverse current (DC)
Terminal capacitance
Symbol
Conditions
Min
Typ
Max
Unit
VF
IF = 200 mA
1.2
V
IR1
VR = 200 V
200
nA
IR2
VR = 300 V
1
µA
Ct
VR = 0 V, f = 1 MHz
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz
Publication date: June 2010
ZKF00171AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
DA2J108_ IR-VR
DA2J108_ IF-VF
IF  VF
DA2J108_Ct-VR
IR  VF
Ct  VR
10−2
104
4.0
Ta = 150°C
100°C
10−4
102
10
Ta = 150°C
125°C
1
10−6
100°C
85°C
10−1
85°C
25°C
10−8
25°C
−30°C
10−2
Ta = 25°C
Terminal capacitance Ct (pF)
125°C
Reverse current IR (mA)
Forward current IF (mA)
103
3.0
2.0
1.0
−30°C
10−3
0
0.4
0.8
Forward voltage VF (V)
2
1.2
10−10
0
100
200
300
Reverse voltage VR (V)
ZKF00171AED
0
0
10
20
30
Reverse voltage VR (V)
40
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
SMini2-F5-B
Unit: mm
1.25 ±0.10
+0.05
0.13 −0.02
0.35 ±0.05
2.5 ±0.2
1.7 ±0.1
2
5°
0 to 0.05
1
0.4 ±0.1
0.50 ±0.05
(0.15)
0.7 ±0.1
5°
ZKF00171AED
3
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semiconductors described in this book
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