VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 Datasheet

VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
FEATURES
TMBS
®
• Trench MOS Schottky technology
ITO-220AB
TO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
1
2
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VFT2080C
VT2080C
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
PIN 2
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
TO-262AA
K
K
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
MECHANICAL DATA
2
1
1
VBT2080C
PIN 1
3
VIT2080C
K
PIN 2
2
HEATSINK
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
IF(AV)
2 x 10 A
VRRM
80 V
IFSM
100 A
Mounting Torque: 10 in-lbs maximum
VF at IF = 10 A
0.60 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode







MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
PARAMETER
VRRM
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
IF(AV)
VT2080C
VFT2080C VBT2080C
80
20
10
VIT2080C
UNIT
V
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
100
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
EAS
110
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
IRRM
1.0
A
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TJ, TSTG
-55 to +150
°C
Revision: 11-May-16
Document Number: 89166
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage
per diode
TA = 25 °C
IF = 10 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
Reverse current per diode
SYMBOL
TA = 25 °C
VR = 80 V
TA = 125 °C
IR (2)
TYP.
MAX.
0.57
-
UNIT
0.67
0.81
0.52
-
0.60
0.70
20
600
μA
10
20
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
RJC
per device
VT2080C
VFT2080C
VBT2080C
VIT2080C
3.0
6.0
3.0
3.0
2.0
5.0
2.0
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT2080C-E3/4W
1.88
4W
50/tube
Tube
ITO-220AB
VFT2080C-E3/4W
1.73
4W
50/tube
Tube
TO-263AB
VBT2080C-E3/4W
1.36
4W
50/tube
Tube
TO-263AB
VBT2080C-E3/8W
1.36
8W
800/reel
Tape and reel
TO-262AA
VIT2080C-E3/4W
1.44
4W
50/tube
Tube
Revision: 11-May-16
Document Number: 89166
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Resistive or Inductive Load
Instantaneous Reverse Current (mA)
Average Forward Current (A)
24
V(B,I)T2080C
20
16
VFT2080C
12
8
4
0
0
25
75
50
100
125
150
175
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
30
40
50
60
80
70
90
100
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
Junction Capacitance (pF)
D = 0.2
6
5
D = 1.0
D = 0.1
4
T
3
2
1
D = tp/T
2
4
6
8
1000
100
tp
10
0.1
0
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.5
D = 0.3
7
Average Power Loss (W)
TA = 150 °C
10
Percent of Rated Peak Reverse Voltage (%)
8
10
12
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
10
Junction to Case
VFT2080C
V(B,I)T2080C
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 11-May-16
Document Number: 89166
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.055 (1.39)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
2
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
3
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.076 (1.93) REF.
45° REF.
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.190 (4.83)
0.170 (4.32)
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
1
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 11-May-16
Document Number: 89166
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000