VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 2 3 VFT1080C VT1080C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. K K MECHANICAL DATA 2 1 1 VBT1080C VIT1080C PIN 1 K PIN 2 2 3 HEATSINK PIN 1 PIN 2 PIN 3 K Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Mounting Torque: 10 in-lbs maximum 2x5A VRRM 80 V IFSM 80 A VF at IF = 5 A 0.57 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) VT1080C VFT1080C VBT1080C 80 10 5 VIT1080C UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 80 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 30 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -55 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Revision: 11-May-16 Document Number: 89164 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 10 mA TA = 25 °C IF = 3 A Instantaneous forward voltage per diode TYP. MAX. UNIT VBR 80 (minimum) - V TA = 25 °C IF = 5 A VF (1) IF = 3 A TA = 125 °C IF = 5 A Reverse current per diode SYMBOL TA = 25 °C VR = 80 V TA = 125 °C IR (2) 0.54 - 0.63 0.72 0.49 - 0.57 0.66 12 400 μA 6 15 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode RJC per device VT1080C VFT1080C VBT1080C VIT1080C 3.5 6.5 3.5 3.5 2.5 5.5 2.5 2.5 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1080C-E3/4W 1.88 4W 50/tube Tube ITO-220AB VFT1080C-E3/4W 1.70 4W 50/tube Tube TO-263AB VBT1080C-E3/4W 1.35 4W 50/tube Tube TO-263AB VBT1080C-E3/8W 1.35 8W 800/reel Tape and reel TO-262AA VIT1080C-E3/4W 1.43 4W 50/tube Tube Revision: 11-May-16 Document Number: 89164 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Resistive or Inductive Load Instantaneous Reverse Current (mA) Average Forward Current (A) 12 V(B,I)T1080C 10 8 VFT1080C 6 4 2 0 0 25 75 50 100 125 150 175 100 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 20 30 40 50 60 100 Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 3.5 3.0 D = 0.2 2.5 Junction Capacitance (pF) D = 0.8 Average Power Loss (W) 90 Percent of Rated Peak Reverse Voltage (%) 4.0 D = 0.5 D = 0.3 D = 1.0 D = 0.1 2.0 T 1.5 1.0 0.5 D = tp/T 0 1 3 2 4 100 tp 10 0.1 0 5 6 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 80 70 Case Temperature (°C) TA = 150 °C TA = 125 °C 10 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 Junction to Case VFT1080C V(B,I)T1080C 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 11-May-16 Document Number: 89164 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) PIN 2 0.160 (4.06) 0.140 (3.56) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 3 7° REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.110 (2.79) 0.100 (2.54) 7° REF. 0.076 (1.93) REF. 45° REF. 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 30° (TYP.) (REF.) 0.250 (6.35) MIN. 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.510 (12.95) 0.470 (11.94) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 11-May-16 Document Number: 89164 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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