Da ata a S he et AM3 321A A_RE E Parrt Numbe er : SPM MRDT3215A0 SPMRDT T3215A0 0 Introd duction n Part Numberr : SPM MRDT32 215A0 pact Po ower Lig ghting S Source Comp Featu ures age: Ag plated 2 pa ad design package with silico one resin Packa View Angle : 120˚ al wavelen ngth : 620 0nm Typica al efficienccy : 60 lm m/W Optica ondition : JEDEC J Le evel 2a Preco ding Voltag ge : up to o ±2kV [HB BM] ESD Withstand Appliications s trafficc lights LCD, switc ches, keyss, displays s, illuminatted adverttising) back lighting (L or and extterior auto omotive lig ghting interio andescent lamps substtitution of micro inca er lights (e e.g. steps, exit wayys, etc.) marke mbol luminaire signal and sym Envirronmen ntal Com mplianc ce Samssung is co ompliant to o the resttrictions off hazardou us substannces in ele ectronic equipm ment, name ely, the Ro oHS, ELV,, ISO1400 01 and RE EACH direectives. Samsung will no ot intention nally suppllement the e restricted d materialss to the LED L 6+ productt: Cd,Pb,H Hg,PBBs,P PBDEs and d Cr 2015/08/03 3/Rev.05 - 1 - SPMRDT T3215A0 0 Table T o of Co ontentts Part Numberr Descrip ption -------------------------- 3 Characteristic c -------------------------- 4 Typiical Chara acteristic -------------------------- 4 Lum minous inte ensity Bin -------------------------- 4 Forw ward Volta age Bin -------------------------- 5 Dom minant Wavelength B Bin -------------------------- 5 Abso olute Maximum R Rating -------------------------- 6 Typical Charracteristicc Graph -------------------------- 7 Mecchanical Dimensio D on -------------------------- 11 1 Sold dering Infformation n 1 -------------------------- 12 Packking Information 1 -------------------------- 13 Prod duct Labe eling Info ormation 1 -------------------------- 15 Relia ability Te est Cond ition 1 -------------------------- 16 Preccaution fo or Use 1 -------------------------- 17 Revision His story 1 -------------------------- 19 Com mpany Infformation n 1 -------------------------- 19 2015/08/03 3/Rev.05 - 2 - SPMRDT T3215A0 0 Part N Numberr Descrription The Part number designation d n is expla ined as fo ollows : SP M R RD T 321 5 A 0 AB B CD EF AB C DE F GHI J K L MN OP QR Where: AB - dessignates com mpany name e and Samssung LED PKG P (SP for Samsung LLED PKG) C - dessignates pow wer variant (M for autom motive Midd dle Power) DE - dessignates color variant (R RD for auto motive RED D and single e color) F - dessignates LED PKG vers sion (value T for initial version) GHI - dessignates pro oduct configu uration and type J - dessignates ope erating cond dition (value 5 for 50mA A) K - dessignates spe ecific properrty L - dessignates CR RI variant (va alue 0 for d discrete colo or) MN - dessignates forw ward voltage e property OP - dessignates dom minant wave elength prop perty QR - dessignates lum minous intensity propertyy 2015/08/03 3/Rev.05 - 3 - SPMRDT T3215A0 0 Chara acteristiics [1] [TJ = 25℃] Typical Characcteristics Parrameter Sym mbol Valu ue Unit Forward voltage (IF = 50 mA A) VF 2.200 V Reverse current (V VR = 5 V) IR 100 ㎂ Peak wa avelength (I ( F = 50 mA) m λ Peak 6200 ㎚ Dominant wavelength (IF = 50 mA) λ Dom 619..5 ㎚ Spectral bandwidth h at half maximum m △λ 166 ㎚ TC Cλ Peak 0.133 ㎚/K TC Cλ Dom 0.077 ㎚/K TC T V -2.226 ㎷/K 677 K/W Temperatture coefficient of peak waveleng gth(IF =50 mA, -30℃ ℃≤ T≤ 80℃ ℃) Temperatture coefficient of dominant waveleng gth(IF =50 mA, -30℃ ℃≤ T≤ 80℃ ℃) Temperatture coefficient of fo orward voltage(IF = 50 mA A, -30℃≤ T≤ 80℃) Thermal resistance e Rth_J--S (Junction n to Solder point) (Elec.) [1] [ ous Inten nsity Bin[2] Lumino Symbo ol IV, ΦV Condition IF = 50mA [TJ = 25℃] Luminous Inte ensity L Luminous s Flux[3] IV [cd] ΦV [lm] Bin Cod de Min. Max. M Min. Max. BA 1.8 2.24 2 5.4 6.72 BB 2.2 24 2.80 2 6.72 8.40 CA 2.8 80 3.55 3 8.40 10.65 * Note [1] Measure ement condition : LED(T TJ) = Ambie ent temperatture(TA), by applying puulse current for under 25 ms. [2] Luminou us intensity measuring equipment e : CAS140CT T IV and VF tolerances are ±10% % and ±0.1 V V, respective ely. [3] Luminou us flux value e is just refference purp poses. LED are sorted by the valuee of luminou us intensity. 2015/08/03 3/Rev.05 - 4 - SPMRDT T3215A0 0 [1] [TJ = 25℃] ‧ Forwa ard Volta age Bin[2]] Symbo ol VF Condition Bin Cod de Min. Typ. T Max. E1 1.9 - 2.05 E2 2.0 05 - 2.2 IF = 50mA V E3 2.2 20 - 2.35 E4 2.3 35 - 2.5 [1] [TJ = 25℃] ‧ Dominant Wa avelength h Bin[4] Symbol Co ondition λD IF = 50mA Bin Cod de Min. Typ. T Max. C1 615 5.0 - 619.5 Unit nm C2 619 9.5 * Note [4] Wavelen ngth measurring equipment : CAS14 40CT tolerance ±2 nm 2015/08/03 3/Rev.05 Unit - 5 - - 624.0 SPMRDT T3215A0 0 Absolute Ma aximum Rating gs Parrameter Sym mbol Valu ue Unit Operating g tempera ature range e TOPR -40 ~ 100 ℃ Storage temperature range TSTG -40 ~ 100 ℃ TJ_Max. 1255 ℃ IF 700 mA IF 5 mA IFM 1000 mA VR 5 V PTOT 1800 ㎽ - ±22 kV Junction temperatu ure Maximum m forward current[5] (TJ : 25℃ ℃)[6] Minimum m forward ccurrent[5] (TJ : 25℃ ℃)[6] Maximum m peaked current (TJ : 25℃ ℃)[6] Reverse voltage (TJ : 25℃ ℃)[6] Power co onsumption (TJ : 25℃ ℃)[6] ESD sen nsitivity(HB BM) * Notes ormance may y be resulte ed by driving g the produc ct at below Min. IF or above a Max. [5] Unpredictable perfo IF. is excludedd by applyin [6] The me easurement condition me eans that te emperature dependence d ng pulse current for under 25 ms.. m 2015/08/03 3/Rev.05 - 6 - SPMRDT T3215A0 0 Typica al Charracteristtics Grraph Typiccal Specttrum : IF = 50 mA, TJ = 25°C C[6] ength Sh hift vs An ngle Wavele : IF = 50 mA, TJ = 25°C C[6] 2015/08/03 3/Rev.05 - 7 - SPMRDT T3215A0 0 ‧ Relattive Lum minous Inttensity & Forward Voltage e vs Forrward Cu urrent : TJ = 25°C[6] d Currentt Wavvelength Shift vs Forward : Reference poinnt_IF = 500 mA, TJ = 25°C[6] 2015/08/03 3/Rev.05 - 8 - SPMRDT T3215A0 0 ‧ Relattive Lum minous Inttensity & Forward Voltage e vs Tem mperature e : Reference poinnt_25℃, IF = 50 mA A ature Wavvelength Shift vs Tempera : Reference poinnt_25℃, IF = 50 mA A 2015/08/03 3/Rev.05 - 9 - SPMRDT T3215A0 0 ‧ Typiccal Radia ant Patte ern : IF = 50 mA, TJ = 25°C[66] ‧ Max. Permisssible Forrward Cu urrent : IF = f (Tc) 2015/08/03 3/Rev.05 - 10 - SPMRDT T3215A0 0 Mecha anical Dimens D sion[7] ② An node mark ① * Note [7] Unit : m mm, Tolerancce : ±0.10m mm Do not place presssure on the encapsulatin ng resin (ha atch area) on the polym mer The maximum compressing forrce is 15N o ‧ Electtric Sche ematic Diagram ② ① 2015/08/03 3/Rev.05 - 11 - SPMRDT T3215A0 0 Solde ering Infformation Configurattion & Solder Pa ad Layout[8] Pad C * Note [8] Unit : m mm, Tolerancce : ±0.10m mm w Soldering Cond dition (Pb b Free) Reflow Reflow w Frequency : 2 tim mes max. al Solderiing Cond dition Manua Not m more than 5 seconds s @MAX3 300℃, und der soldering iron.(o ne time only) o 2015/08/03 3/Rev.05 - 12 - SPMRDT T3215A0 0 Packin ng Info ormation n Taping[9] A B 4.0±0.10 4.0±1.0 C 2 ± 2.0 D 0.05 1.7 75± E 0.10 5.5 ± G F 12.0± 0.05 0.10 3.2± H 3.83± 0.10 I 00.10 0.23± J 2.17± 0.02 * Not mm, Cumula ative toleranc ce/10 pitche es to be ±0.2mm [9] Unit : m LED ta aping quantitty : 2,000EA A / Reel. Adhesio on Strength of Cover Tape T : Adhession strength h to be 0.1--0.7N when the cover tape t is turned off from the e carrier tap pe at 10˚ a angle to be the carrier tape. Reel[10]] A 180.0 0 B -3.0 60 ±1.0 0 C 13.0 W1 ± 0.3 [10] Unit : mm 2015/08/03 3/Rev.05 - 13 - 13.0 ± 0.5 W2 W 15.4 4 ± 1.0 0.10 0 SPMRDT T3215A0 0 ‧ Packing Box information Dimension n of Transsportation Box in m mm W Width Length Height Reels//box 2 245 220 182 Up to 10 0 Reels 2 245 220 86 Up to 5 Reels 2015/08/03 3/Rev.05 - 14 - SPMRDT T3215A0 0 Produ uct Labeling In nformattion Label Informatiion A ABCDEF F Bin Code Part Number SPMR RDT3215A0 ABCD DEF XXXX IIIIIIIIIIIIIIIIIIIIIIIIIIIII ①②③④ ④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / 1,000 PCS P IIIIIIIIIIIIIIIIIIIIIIIIII ber Lot Numb 1. Bin C Code AB : Forwarrd Voltage e(VF) Bin CD : Domina ant Wavellength(λD) Bin EF : Lumino ous Intens sity(IV) Bin 2. Lot No. 00 PCS ①②③④ ④⑤⑥⑦⑧ ⑧⑨ / 1ⓐⓑ ⓑⓒ / 2,00 ① : Producttion Site (S:SAMSU ( UNG KORE EA, G:TIA ANJIN CHI NA) ② ④ : L (LED) : Productt State (A A:Normalityy, B:Bulk, C:First Pro oduction, R:Reprodu uction, S:Sample) : Year (X X:2013, Y:2 2014, Z:20 015 ...) ⑤ : Month (1 ~ 9, A, B, C) ⑥ : Day (1 ~ 9, A, B ~ V) ③ ⑦⑧⑨ : SAMSU UNG ELEC CTRONICS S Product number (1 ( ~ 999) ⓐⓑⓒ : Reel Number (1 ~ 999) 2015/08/03 3/Rev.05 - 15 - SPMRDT T3215A0 0 Reliab bility Te est Con nditions s Fo or dettailed Inforrmatio on ple ease conta act your SA AMSU UNG S Sales partn ner 2015/08/03 3/Rev.05 - 16 - SPMRDT T3215A0 0 Preca aution fo or Use 1) For ovver-current--proof functtion, custom mers are re ecommended to applyy resistors to preven nt sudden change of the curren nt caused by b slight sh hift of the vvoltage. 2) This d device shou uld not be used in an ny type of fluid such as water, oil, organiic solve ent, etc. When W wash hing is requ uired, IPA is recomme ended to u se. ecided afterr considerin ng the 3) When the LEDs illuminate, operating current should be de ent maximum tempera ature. ambie s in a clean env ironment. 4) LEDs must be stored months or more m after being shippped from If the LEDs are to be storred for 3 m onics, they should be e packed by a sealed container with nitrog gen gas ung Electro Samsu injecte ed.(Shelf liffe of sealed d bags: 12 2 months, te emp. ~40 ℃, ℃ ~90 % R RH) 5) After sstorage bag g is open, device sub bjected to soldering, solder refloow, or othe er high ttemperature e processes s must be:: a. Mo ounted within 672 hours (28 dayss) at an as ssembly line with a coondition of no morre than 30 ℃/60 %RH H, b. Sto ored at <10 0 %RH. w anti-mo oisture pac cking, fold to t close anny opening and 6) Repacck unused Products with then sstore in a dry place. es require baking beffore mountiing, if humidity card reading r is >60 % 7) Device at 23± ±5 ℃. 8) Device es must be e baked forr 1 day at 65±5 ℃, if baking is required. 9) The L LEDs are sensitive to the static electricity and a surge. It is recoommended to d or anti-electrostatic glove whe en handling g the LEDss. use a wrist band ding the ab bsolute ma aximum ratiing is appliied to LED Ds, it may cause c If voltage exceed ge or even n destructio on to LED devices. damag aged LEDs may show w some unu usual chara acteristics such s as inccrease in leak Dama nt, lowered turn-on vo oltage, or a abnormal lig ghting of LEDs L at low w current. curren 2015/08/03 3/Rev.05 - 17 - SPMRDT T3215A0 0 ccurred by adhesives,, flux, hard dener or 10) VOCs (volatile organic compounds) may be oc nic additive es which is s used in lu uminaires (fixture) ( and LED siliccone bags are organ perm meable to itt. It may le ead a disco oloration wh hen LED expose e to hheat or ligh ht. non can giv ve a signifi cant loss of o light emitted (outpuut) from the e This phenomen naires (fixtu ures). lumin In orrder to prevvent these problems, we recom mmend you to know thhe physical prope erties for th he materials used in luminaires, It requires to selectt carefully. 11) Risk of Sulfurization (or Tarnishing) T The le ead frame from Sams sung Electrronics is a plated pac ckage and it may cha ange to black((or dark co olored) when it is exxposed to Ag A (a), Sulffur (S), Ccchlorine (Cl) or other haloge en compou und. It requ uires attentiion. e (Sulfuriza ation) of the lead fram me may ca ause a change of deggradation in ntensity, Sulfide chrom maticity coordinates an nd it may ccause open n circuit in n extreme cases. It re equires attentiion. Sulfide e (Sulfuriza ation) of the lead fram me may ca ause of sto orage and uusing with oxidizing substa ances together. There efore, LED is not reco ommend to o use and store with the below list. d solder cre eam etc : Rubber, Plain paper, lead 2015/08/03 3/Rev.05 - 18 - SPMRDT T3215A0 0 Revision His story Date Revision R H History 2010.10.18 Author Draw wn Ap pproved Initial Ed dition W.H. Juunh Y.H H. Song 2012.10.08 Speciffication for mat chang ge J.C. Kaang S..H. Lee 2012.11.07 Electric Sc chematic in ncorrect ch hange J.C. Kaang S..H. Lee 2013.02.15 Prrecaution R Revision J.C. Kaang S..H. Lee 2014.01.27 Ad ddition of b box size J.C. Kaang S..H. Lee 2015.08.03 Modify of Packing g Information S.Y. Hoong S.B B. Kwak Company Infformatio on amsung Sem miconductorr Inc., US Sa 3655 N. First Street, San Jose CA A 95134, USA A TEL. +1 1-408-544-400 00 Europe e Samsun ng Electronics s Germany Gm mbH, Samsun ng House, Am Kro onberger Hang g 6, Schwalbaach/Ts,German ny TEL. +4 49-6196-66-0 0 Copyright @1995-2015 All rights re eserved Samsung g Electron nics 95, Samsun ng 2-ro, Giheung-Gu, Yongin-Cityy, Gyeongii-Do 446-711 Korea Japan Samsun ng Japan Corporation SLED D Team 10F, Shinagawa Grand Central C Towerr 2-16-4, Kouunan, Minato-ku, Tokyo 108-824 40, Japan TEL. +8 81-3-6369-63 327 China (Tianjin Offfice in Chin na) http://www w.samsung g.com/sec/b business/# # Sales Conttact : em.yeon@samsu ung.com 2015/08/03 3/Rev.05 Tianjin Samsung LED D Co., LTD. Weisi (6 6th) Rd., Micrro-Electronics Industrial Pa ark, Xiqing District, Tianjin 30038 85, China TEL. +8 86-755-8608-5 5550 - 19 -