flgapdrive

STGAP1S
Breakthrough in robustness
and flexibility
IGBT/MOSFET driver with 1500 V rated on-chip galvanic isolation provides
enhanced robustness, noise immunity and design flexibility
The STGAP1S’s on-chip isolation
layer provides galvanic
separation between input and
control stages from high current
gate driving and diagnostics.
Its (extremely) high signal
integrity and reduced
propagation delay, together
with extensive diagnostics, help
developers design solutions with
superior robustness and safety.
The device’s high current
capability allows a large
application spectrum, in the
several kW range.
KEY FEATURES
• Up to 1500 V high voltage rail
KEY APPLICATIONS
• Inverters for electrical vehicles
• 5 A sink/source driver current capability
• Electrical vehicle chargers
• Negative gate turn-off
• 600/1200 V inverters
• 2-level turn-off
• Solar inverters
• Active Miller and VCE clamping
• Uninterruptible power supplies (UPS)
• IGBT desaturation detection
• ± 50 V/ns transient immunity
• 100 ns input-output propagation delay
• SPI programmability and digital diagnostics
• Qualified for automotive applications
according to AEC-Q100
SPI communication enables
complete and easy
configurability as well as full
digital diagnostics.
www.st.com/STGAP1S
In ST’s STGAP1S, a thick oxide isolation
layer is grown on-chip to build a miniature
transformer with up to 1500 V isolation
capabilities. The transformer is used to
inductively transfer logic signals between
an input chip, where all interface circuitry is
placed, and an output chip that includes high
current driver and diagnostic blocks.
Particular care was taken in designing the
IGBT/ MOSFET driving section that features
30 V/ 5 A drive capability with separate
sink and source paths for enhanced
design flexibility and BOM reduction. A programmable two-step turn-off with
negative drive and Miller clamp enables
designs with the highest immunity to induced
turn-on. The device is perfectly tailored to
drive wide band-gap devices.
All protection parameters and diagnostic
information are accessible through a series
of on-chip registers, for monitoring and
control purposes, through an SPI bus, thus
reducing pin count.
STGAP1S embeds a comprehensive palette
of protection and diagnostic features
including anti-desaturation and over-current
detection, under-voltage and over-voltage
detection coupled with just a 100 ns of
input-output propagation delay ensuring fast
reaction times.
The result is a compact, robust and highly
noise-immune IGBT/ MOSFET driver offering
enhanced design flexibility for high power
applications such as inverters for electrical
vehicles and electrical vehicle charging
stations as well as inverters for harsh
industrial environments.
VDD
VCECLAMP
To level shifter
3VC
voltage reg
DESATcurr
DESAT
VREGISO
VREG
DESATth
SD
IN+
IN-/DIAG2
DIAG1
VH
UVLO
VH
Control
logic
Floating
section
control
logic
Isolation
GON
GOFF
Level
shifter
CLAMP
VL
GND
UVLO
VL
GND
2LVTOth
GNDISO
Flooting group
CLAMPth
CS
CK
SDI
SENSE
SPI
To floating section
control logic
SDO
SENSEth
ASC
DEVICE SUMMARY
Order code
STGAP1S/STGAP1STR
Package
Packing
Evaluation board
SO24W
Tube/Tape & reel
EVALSTGAP1S
© STMicroelectronics - December 2015 - Printed in United Kingdom - All rights reserved
The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies
All other names are the property of their respective owners
Reference: FLGAPDRIVE1215
For more information on ST products and solutions, visit www.st.com/gapdrive