RMK 33N Datasheet

RMK 33N
www.vishay.com
Vishay Sfernice
Wirebondable Dual Value Thin Film Chip Resistor Networks,
Center Tap
FEATURES
• High precision
• Very low temperature coefficient < 10 ppm/°C
• Excellent stability 0.03 % (2000 h, rated power,
at + 70 °C)
• Aluminum or gold pads
• High temperature version (up to 230 °C) see
RMKHT (www.vishay.com/doc?60075)
• Wirebondable
• Ohmic range 1 k to 500 k
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Actual Size
The demand for high precision, high stability microchips for
both military and industrial environments is increasing with
the growth and sophistication of modern day hybrid
circuitry. The need for high accuracy ultra stable micro
dividers particularly triggered the development of these third
generation nickel chromium microchip dividers which offer
standards of accuracy and thermal/time stability never
achieved before in the conventional second generation thin
metal film technologies.
SCHEMATICS
RT
R1
R2
RT = R1 + R2 with R1 = R2 Standard
(Unequal values on request)
PERFORMANCES
Stability
Voltage coefficient
Limiting voltage
Noise
Thermal EMF
Shelf life stability
300 ppm typical
< 0.01 ppm/V
100 VDC on RT
< - 35 dB typical
< 0.01 μV/°C
50 ppm
2000 h at + 70 °C under Pn
MIL-STD-202 method 308
1 year
STANDARD ELECTRICAL SPECIFICATIONS
MODEL
SIZE
RESISTANCE
RANGE (1)

POWER
RATING
P70 °C
W
ABSOLUTE
TOLERANCE
±%
RATIO
TOLERANCE
±%
ABSOLUTE
TCR (2)
± ppm/°C
RATIO
TCR
± ppm/°C
RMK 33N
0303
1K to 500K
0.050
0.1, 0.5, 1
0.1, 0.05, 0.02, 0.01
5, 10
1, 2
Notes
(1) (R = R + R )
T
1
2
(2) ± 5 ppm/°C maximum at 0 °C to + 70 °C, ± 10 ppm/°C maximum at - 55 °C to + 155 °C
Rated Power in %
DERATING
CLIMATIC SPECIFICATIONS
100
Operating temperature range
- 55 °C to + 155 °C
Storage temperature range
- 55 °C to + 155 °C
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature in °C
Revision: 26-Mar-13
Document Number: 60068
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RMK 33N
www.vishay.com
Vishay Sfernice
DIMENSIONS
DIMENSION
B
Bonding Pad Area
D
A
INCHES
MILLIMETERS
A
0.033 ± 0.004
0.855 ± 0.10
B
0.033 ± 0.004
0.855 ± 0.10
C
0.01 to 0.015
0.25 to 0.40
D
0.006
0.15
E
0.004
0.10
F
0.006
0.15
E
C
F
MECHANICAL SPECIFICATIONS
Resistive element
Passivated nichrome
Substrate material
Silicon (alumina on request)
Passivation
Silicone nitride
Bonding pads
Aluminum or gold
GLOBAL PART NUMBER INFORMATION
New Global Part Numbering: RMK33N5KF25KB0099
R
M
K
GLOBAL MODEL
3
3
R1 VALUE
Decimal
R, K, or M
Revision: 26-Mar-13
N
5
ABS.
TOLERANCE
B = ± 0.1 %
W = ± 0.05 %
D = ± 0.5 %
F = ± 1.0 %
K
F
2
R2 VALUE
Decimal
R, K, or M
5
K
B
RAT.
TOLERANCE
B = ± 0.1 %
W = ± 0.05 %
P = 0.02 %
L = 0.01 %
0
0
9
TERMINATIONS
OPTION
Blank =
Aluminum
G = Gold
Leave blank
if no option
9
Document Number: 60068
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
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Revision: 02-Oct-12
1
Document Number: 91000