ILD223T Datasheet

ILD223T
Vishay Semiconductors
Optocoupler, Photodarlington Output, Dual Channel,
SOIC-8 Package
FEATURES
• Two channel optocoupler
• High current transfer ratio at IF = 1.0 mA,
500 % minimum
A 1
8C
• Isolation test voltage, 4000 VRMS
C 2
7E
A 3
6C
• Electrical specifications similar to standard 6-pin
coupler
C 4
5E
• Compatible with dual wave, vapor phase and IR reflow
soldering
• SOIC-8 surface mountable package
i179042
• Standard lead spacing, 0.05"
• Available only on tape and reel (conforms to EIA
standard 481-2)
DESCRIPTION
• Lead (Pb)-free component
The ILD233T is a high current transfer ratio (CTR)
optocoupler. It has a gallium arsenide infrared LED emitter
and silicon NPN photodarlington transistor detector.
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
This device has CTRs tested at an LED current of 1.0 mA.
This low drive current permits easy interfacing from CMOS to
LSTTL or TTL.
The ILD223T is constructed in a standard SOIC-8 foot print
which makes it ideally suited for high density applications. In
addition to eliminating through hole requirements, this
package conforms to standards for surface mounted
devices.
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884) available with option 1
ORDER INFORMATION
PART
REMARKS
ILD223T
CTR > 500 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
6.0
3.0
30
45
0.4
V
A
mA
mW
mW/°C
30
5.0
75
3.1
V
V
mW
mW/°C
INPUT
Peak reverse voltage
Peak pulsed current
Continuous forward current per channel
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Power dissipation per channel
Derate linearly from 25 °C
Document Number: 83648
Rev. 1.6, 20-Apr-07
1.0 µs, 300 pps
Pdiss
BVCEO
BVECO
Pdiss
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ILD223T
Optocoupler, Photodarlington Output,
Dual Channel,
SOIC-8 Package
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
t = 1.0 s
VISO
4000
VRMS
Ptot
250
mW
Derate linearly from 25 °C
Storage temperature
Tstg
2.0
- 55 to + 150
mW/°C
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering temperature (2)
Tsld
260
°C
COUPLER
Isolation test voltage
Total package dissipation
(2 LEDs and 2 detectors, 2 channels)
Notes
(1) T
amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
1.3
V
100
µA
INPUT
Forward voltage
IF = 10 mA
VF
Reverse current
VR = 6.0 V
IR
0.1
VF = 0 V, f = 1.0 MHz
CO
25
Collector emitter breakdown voltage
IC = 10 µA
BVCEO
30
Emitter collector breakdown voltage
IC = 10 µA
BVCEO
5.0
VCE = 50 V, IF = 0 A
ICEO
VCE = 5.0 V
CCE
Capacitance
pF
OUTPUT
Collector emitter leakage current
Collector emitter capacitance
V
V
50
3.4
nA
pF
COUPLER
Capacitance (input to output)
IF = 1.0 mA, ICE = 0.5 mA
Saturation voltage, collector emitter
Resistance, input to output
ILD223T
CIO
ILD223T
VCEsat
ILD223T
CIO
0.5
pF
1.0
100
V
GΩ
Note
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
DC current transfer ratio
TEST CONDITION
SYMBOL
MIN.
IF = 1.0 mA, VCE = 5.0 V
CTRDC
500
TYP.
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
TEST CONDITION
PART
SYMBOL
MIN.
Turn-on time
PARAMETER
VCC = 10 V, RL = 100 Ω, IF = 5.0 mA
ILD223T
ton
15
µs
Turn-off time
VCC = 10 V, RL = 100 Ω, IF = 5.0 mA
ILD223T
toff
30
µs
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For technical questions, contact: [email protected]
TYP.
MAX.
UNIT
Document Number: 83648
Rev. 1.6, 20-Apr-07
ILD223T
Optocoupler, Photodarlington Output,
Dual Channel,
SOIC-8 Package
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Climatic classification (according to IEC 68 part 1)
MAX.
UNIT
55/100/21
Comparative tracking index
CTI
175
399
VIOTM
6000
V
VIORM
560
V
PSO
350
mW
ISI
150
mA
TSI
165
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
per IEC 60950 2.10.5.1
°C
4
mm
4
mm
0.2
mm
Note
As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of prodective circuits.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
1.4
V F - Forward Voltage (V)
1.3
Tamb
Ta
= - =20- 20
°C °C
= 25
Ta
Tamb
= 25
°C °C
= 50
Tamb
Ta
= 50
°C °C
Ta
= 70
°C °C
= 70
Tamb
TA = - 55 °C
Normalized CT
CTRce
1.2
TA = 25 °C
1.1
1.0
0.9
TA = 100 °C
0.8
10
Normalized to:
mA,VVCE
== 55VV
IIfF == 11 mA,
CE
= 25
T
Taamb
= 25
°C °C
1
0.7
.1
1
10
I F - Forward Current (mA)
0.1
iild223t_01
2000
τ
Duty Factor
1000
100
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10-6
10-5
DF =τ/t
iild223t_02
100
VCE = 5 V
1000
101
500
0
0.1
iild223t_04
Fig. 4 - Peak LED Current vs. Duty Factor, τ
Document Number: 83648
Rev. 1.6, 20-Apr-07
Tamb = - 20 °C
Tamb = 25 °C
Tamb = 50 °C
Tamb = 70 °C
1500
t
10-4 10 -3 10 -2 10-1 10 0
t - LED Pulse Duration (s)
10
Fig. 5 - Normalized CTRCE vs. LED Current
CTRce - Current Transfer Ratio (%)
10000
1
IF - LED Current (mA)
iild223t_03
Fig. 3 - Forward Voltage vs. Forward Current
If(pk) - Peak LED Current (mA)
0.1
100
1
10
100
IF - LED Current (mA)
Fig. 6 - CTR vs. LED Current
For technical questions, contact: [email protected]
www.vishay.com
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ILD223T
Optocoupler, Photodarlington Output,
Dual Channel,
SOIC-8 Package
Vishay Semiconductors
Ice - Collector Current (mA)
100
Tamb = - 20 °C
Tamb = 25°C
Tamb = 50°C
Tamb = 70 °C
10
IF
VCE = 5 V
tD
tR
VO
t PLH
1
VTH =1.5 V
0.1
t PHL
0.1
1
10
100
tS
tF
iild223t_07
IF - LED Current (mA)
iild223t_05
Fig. 7 - Collector Current vs. LED Current
Fig. 9 - Switching Timing
VCC = 10 V
F = 10 kHz,
DF = 50 %
RL
VO
I F = 5 mA
iild223t_06
Fig. 8 - Switching Schematic
PACKAGE DIMENSIONS in inches (millimeters)
0.120 ± 0.002
(3.05 ± 0.05)
R 0.010 (0.13)
0.050 (1.27)
0.014 (0.36)
CL 0.154 ± 0.002
(3.91 ± 0.05)
0.240
(6.10)
0.036 (0.91)
0.045 (1.14)
0.170 (4.32)
0.260 (6.6)
0.016 (0.41)
Pin One I.D.
7°
0.230 ± 0.002
ISO Method A
0.015 ± 0.002
(0.38 ± 0.05)
(5.84 ± 0.05)
0.004 (0.10)
0.008 (0.20)
0.008 (0.20)
0.050 (1.27) typ.
0.040 (1.02)
i178020
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4
40 °
0.020 ± 0.004
(0.51 ± 0.10)
2 plcs.
5° Max.
R0.010
(0.25) max.
For technical questions, contact: [email protected]
0.0585 ± 0.002
(1.49 ± 0.05)
0.125 ± 0.002
(3.18 ± 0.05)
Lead coplanarity
± 0.001 max.
Document Number: 83648
Rev. 1.6, 20-Apr-07
ILD223T
Optocoupler, Photodarlington Output,
Dual Channel,
SOIC-8 Package
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83648
Rev. 1.6, 20-Apr-07
For technical questions, contact: [email protected]
www.vishay.com
5
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Revision: 02-Oct-12
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Document Number: 91000