ILD256T Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, AC Input FEATURES A/C 1 8 C C/A 2 A/C 3 7 E C/A 4 5 E 6 C i179044 DESCRIPTION The ILD256T is a dual channel optocoupler. Each channel consists of two infrared emitters coupled to a silicon NPN phototransistor detector. These circuit elements are constructed with a standard SOIC-8A footprint. The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) of 20 % at IF = 10 mA. • Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum • Bidirectional AC Input • SOIC-8 Surface Mountable Package • Isolation Test Voltage, 4000 VRMS • Standard Lead Spacing, 0.05 • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS • UL1577, File No. E52744 System Code Y • DIN EN 60747-5-2 (VDE0884) Available with Option 1 APPLICATIONS • Telecom applications ring detection off/on hook status ORDER INFORMATION PART REMARKS ILD256T CTR > 20 %, SOIC-8 Note: For additional information on the available options refer to Option Information. ABSOLUTE MAXIMUM RATINGS1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT IF 30 mA INPUT Forward continuous current Power dissipation Pdiss Derate linearly from 25 °C 50 mW 0.66 mW/°C OUTPUT Collector-emitter breakdown voltage BVCEO 70 V Emitter-collector breakdown voltage BVECO 7.0 V Power dissipation Derate linearly from 25 °C Document Number 83649 Rev. 1.6, 20-Apr-07 Pdiss 125 mW 1.67 mW/°C For technical support, please contact: [email protected] www.vishay.com 1 ILD256T Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT t = 1.0 s VISO 4000 VRMS Ptot 300 mW 4.0 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Soldering temperature at 260 °C Tsld 10 sec. COUPLER Isolation voltage, input to output Total package dissipation (LED + detector) Derate linearly from 25 °C Note: 1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS1) PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT INPUT Forward voltage IF = ± 10 mA VF 1.2 1.55 V Reverse current VR = 6.0 V IR 0.1 100 mA IC = 10 µA BVCEO 70 Emitter-collector breakdown voltage IE = 10 µA BVECO 7.0 Collector-emitter leakage current VCE = 10 V ICEO IF = ± 16 mA, IC = 2.0 mA VCEsat OUTPUT Collector-emitter breakdown voltage V V 5.0 50 1.0 2.0 nA COUPLER Symmetry (CTR at + 10 mA)/(CTR at -10 mA) 0.5 Saturation voltage, collector-emitter 0.4 V Note: 1) T amb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART IF = ± 10 mA, VCE = 5.0 V DC Current Transfer Ratio SYMBOL MIN CTRDC 20 TYP. MAX UNIT % SAFETY AND INSULATION RATINGS1) PARAMETER TEST CONDITION SYMBOL MIN Climatic classification (according to IEC 68 part 1) TYP. MAX UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 6000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 °C Creepage 4 Clearance 4 mm 0.2 mm Insulation thickness, reinforced rated per IEC60950 2.10.5.1 mm Note: 1) As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of prodective circuits. www.vishay.com 2 For technical support, please contact: [email protected] Document Number 83649 Rev. 1.6, 20-Apr-07 ILD256T Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 40 85 °C 25 °C 0 - 55 °C - 20 1.0 0.5 - 40 - 60 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 0.0 0.1 1.5 V F - LED Forward Voltage (V) iil256at_01 iil256at_04 Figure 1. LED Forward Current vs.Forward Voltage TA = 25 °C TA = 50 °C TA = 70 °C TA = 100 °C 0.8 TA = - 55 °C Normalized CTR 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 0.1 1 iil256at_02 0.6 10 Normalized to: IF = 10 mA, VCE = 10 V TA = 25 °C 0.0 0.1 100 IF - Forward Current (mA) VCE(sat) = 0.4 V 0.4 0.2 0.8 0.7 1 10 100 IF - LED Current (mA) iil256at_05 Figure 5. Normalized Saturated CTR Figure 2. Forward Voltage vs. Forward Current 1.5 10000 ˇ Normalized to: I F = 10 mA Duty Factor 0.005 0.01 0.02 0.05 0.1 0.2 0.5 100 Normalized CTRcb If(pk) - Peak LED Current (mA) 100 1.0 1.3 t 1000 DF = τ/t 10 10 - 6 10 - 5 iil256at_03 10 1 IF - LED Current (mA) Figure 4. Normalized CTR vs. IF and Tamb 1.4 VF - Forward Voltage (V) Normalized to: IF = 10 mA, VCE = 10 V TA = 25 °C TA = 25 °C TA = 50 °C TA = 70 °C TA = 100 °C 1.5 20 Normalized CTR I F - LED Forward Current (mA) 60 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 1.0 0.0 0.1 t - LED Pulse Duration (s) 1 10 100 I F - LED Current (mA) iil256at_06 Figure 3. Peak LED Current vs. Duty Factor, Tau Document Number 83649 Rev. 1.6, 20-Apr-07 TA = 25 °C TA = 50 °C TA = 70 °C 0.5 Figure 6. Normalized CTRcb For technical support, please contact: [email protected] www.vishay.com 3 ILD256T Vishay Semiconductors 1.5 1000 Normalized Saturated HF 25 °C ICB - Photocurrent (µA) 100 70 °C 10 1 0.1 Normalized to: HFE at VCE = 10 V ICB = 10 µA 1.0 TA TA TA TA 0.5 = - 20 °C = 25 °C = 50 °C = 70 °C V CE(sat) = 0.4 V 0.0 0.1 1 10 100 1 IF - LED Current (mA) iil256at_07 10 iil256at_10 Figure 7. Photocurrent vs. LED Current 100 1000 IB - Base Current (µA) Figure 10. Normalized Saturated HFE vs. Base Current 700 1000 100 V CE = 0.4 V 100 10 400 300 1 200 100 1 IB iil256at_08 10 100 - Base Current (µA) IB - Base Current (µA) 500 IF - LED Current (mA) HFE - Transistor Gain 600 0.1 1000 10 1 0.1 0.01 0.001 0.4 0.5 Figure 8. Base Current vs. IF and HFE 0.7 0.8 Figure 11. Base Emitter Voltage vs. Base Current 10 5 1.2 NHFE - 20 °C NHFE 25 °C NHFE 50 °C NHFE 70 °C 0.8 0.6 0.4 1 iil256at_09 10 100 10 3 10 2 V CE = 10 V 10 1 Typical 10 0 10 -1 10 -2 - 20 1000 IB - Base Current (µA) 0 20 40 60 80 100 T A - Ambient Temperature (°C) iil256at_12 Figure 9. Normalized HFE vs. Base Current and Temp. www.vishay.com 4 10 4 ICEO - Collector Emitter (nA) Normalized to: IB = 10 µA VCE = 10 1.0 Normalized HFE 0.6 VBE - Base Emitter Voltage (V) iil256at_11 Figure 12. Collector-Emitter Leakage Current vs.Temp. For technical support, please contact: [email protected] Document Number 83649 Rev. 1.6, 20-Apr-07 ILD256T Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) 0.120 ± 0.002 (3.05 ± 0.05) R 0.010 (0.13) 0.050 (1.27) 0.014 (0.36) C L 0.154 ± 0.002 (3.91 ± 0.05) 0.240 (6.10) 0.036 (0.91) 0.045 (1.14) 0.170 (4.32) 0.260 (6.6) 0.016 (0.41) Pin One I.D. 0.230 ± 0.002 (5.84 ± 0.05) 7° 0.015 ± 0.002 (0.38 ± 0.05) 40° 0.0585 ± 0.002 (1.49 ± 0.05) ISO Method A 0.004 (0.10) 0.008 (0.20) 0.008 (0.20) 0.050 (1.27) Typ. 0.040 (1.02) i178020 Document Number 83649 Rev. 1.6, 20-Apr-07 0.020 ± 0.004 (0.51 ± 0.10) 2 Plcs. 0.125 ± 0.002 (3.18 ± 0.05) 5° Max. R0.010 (0.25) Max. Lead coplanarity ± 0.001 Max. For technical support, please contact: [email protected] www.vishay.com 5 ILD256T Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: [email protected] Document Number 83649 Rev. 1.6, 20-Apr-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1