ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) FEATURES Dual Channel A/C Quad Channel 1 8 • • • • • Identical channel to channel footprint ILD620 crosses to TLP620-2 ILQ620 crosses to TLP620-4 High collector emitter voltage, BVCEO = 70 V Dual and quad packages feature: - Reduced board space - Lower pin and parts count - Better channel to channel CTR match - Improved common mode rejection • Isolation test voltage 5300 VRMS • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 16 C A/C 1 A/C 2 15 E C A/C 3 14 C A/C 2 7 E A/C 4 13 E A/C 3 6 C A/C 5 12 C A/C 4 5 E A/C 6 11 E A/C 7 10 C A/C 8 9 E V D E DESCRIPTION AGENCY APPROVALS The ILD620, ILQ620, ILD620GB, and ILQ620GB are multi-channel input phototransistor optocouplers that use inverse parallel GaAs IRLED emitter and high gain NPN silicon phototransistors per channel. These devices are constructed using over/under leadframe optical coupling and double molded insulation resulting in a withstand test voltage of 5300 VRMS. The LED parameters and the linear CTR characteristics make these devices well suited for AC voltage detection. The ILD620GB and ILQ620GB with its low IF guaranteed CTRCEsat minimizes power dissipation of the AC voltage detection network that is placed in series with the LEDs. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. • • • • • UL1577, file no. E52744 system code H, double protection cUL tested to CSA 22.2 bulletin 5A DIN EN 60747-5-5 (VDE 0884) FIMKO CQC GB4943.1-2011 and GB8898:2011 (suitable for installation altitude below 2000 m) ORDERING INFORMATION DIP I L x 6 2 0 x x - X PART NUMBER 0 # PACKAGE OPTION x = D (Dual) or Q (Quad) # T TAPE AND REEL 7.62 mm Option 7 > 0.1 mm > 0.7 mm AGENCY CERTIFIED/PACKAGE UL, cUL, FIMKO DIP-8 SMD-8, option 7 SMD-8, option 9 DIP-16 SMD-16, option 7 SMD-16, option 9 VDE, UL, cUL, FIMKO DIP-16 SMD-16, option 9 DUAL CHANNEL 50 to 600 ILD620 ILD620-X007T (1) ILD620-X009T (1) 50 to 600 - Option 9 QUAD CHANNEL CTR (%) 100 to 600 50 to 600 ILD620GB ILD620GB-X009T (1) ILQ620 ILQ620-X007 ILQ620-X009T (1) 100 to 600 50 to 600 ILQ620-X001 ILQ620-X019T (1) 100 to 600 ILQ620GB ILQ620GB-X009T (1) 100 to 600 - Notes • Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. Rev. 1.8, 12-Apr-13 Document Number: 83653 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT mA INPUT Forward current IF ± 60 Surge current IFSM ± 1.5 A Power dissipation Pdiss 100 mW 1.3 mW/°C Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage Collector current BVCEO 70 V IC 50 mA IC 100 mA Pdiss 150 mW 2 mW/°C VRMS t<1s Power dissipation Derate from 25 °C COUPLER Isolation test voltage t=1s VISO 5300 VIORM 890 VP Ptot 250 mW ILD620 400 mW ILD620GB 400 mW Isolation voltage Total power dissipation Package dissipation Derate from 25 °C Package dissipation 5.33 mW/°C ILQ620 500 mW ILQ620GB 500 mW 6.67 mW/°C Derate from 25 °C Creepage distance 7 mm Clearance distance 7 mm VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Tsld 260 °C Isolation resistance Soldering temperature (1) 2 mm from case bottom Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1 1.15 1.3 V 2.5 20 μA INPUT Forward voltage IF = ± 10 mA VF Forward current VR = ± 0.7 V IF Capacitance VF = 0 V, f = 1 MHz CO 25 pF RthJL 750 K/W VCE = 5 V, f = 1 MHz CCE 6.8 VCE = 24 V ICEO 10 100 nA TA = 85 °C, VCE = 24 V ICEO 2 50 μA RthJL 500 Thermal resistance, junction to lead OUTPUT Collector emitter capacitance Collector emitter leakage current Thermal resistance, junction to lead Rev. 1.8, 12-Apr-13 pF K/W Document Number: 83653 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT ILD620 VCEsat 10 μA 0.4 ILQ620 VCEsat 0.4 V V ILD620GB VCEsat 0.4 V ILQ620GB VCEsat 0.4 V COUPLER Off-state collector current VF = ± 0.7 V, VCE = 24 V IF = ± 8 mA, ICE = 2.4 mA Collector emitter saturation voltage IF = ± 1 mA, ICE = 0.2 mA ICEoff 1 Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER Channel/channel CTR match CTR symmetry Current transfer ratio (collector emitter saturated) Current transfer ratio (collector emitter) Current transfer ratio (collector emitter saturated) Current transfer ratio (collector emitter) TEST CONDITION PART IF = ± 5 mA, VCE = 5 V ICE (IF = - 5 mA)/ICE (IF = + 5 mA) IF = ± 1 mA, VCE = 0.4 V IF = ± 5 mA, VCE = 5 V IF = ± 1 mA, VCE = 0.4 V IF = ± 5 mA, VCE = 5 V SYMBOL MIN. CTRX/CTRY 1 to 1 ICE(RATIO) 0.5 TYP. MAX. UNIT 3 to 1 2 ILD620 CTRCEsat 60 ILQ620 CTRCEsat 60 ILD620 CTRCE 50 80 600 % ILQ620 CTRCE 50 80 600 % % % ILD620GB CTRCEsat 30 ILQ620GB CTRCEsat 30 ILD620GB CTRCEsat 100 200 600 % ILQ620GB CTRCEsat 100 200 600 % % % SAFETY AND INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage - routine test PARAMETER 100 %, ttest = 1 s Vpd 1.669 Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 10 kV Vpd 1.424 kV VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb 150 °C (construction test only) RIO 109 Insulation resistance Forward current Power dissipation Rated impulse voltage Safety temperature TYP. MAX. UNIT kV Isi 275 mA PSO 400 mW VIOTM 10 kV Tsi 175 °C Note • According to DIN EN 60747-5-5 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 1.8, 12-Apr-13 Document Number: 83653 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors VIOTM 450 t1, t2 t3 , t4 ttest tstres 400 Phototransistor Pso (mW) 350 300 = 1 s to 10 s =1s = 10 s = 12 s Vpd 250 VIOWM VIORM 200 IR-diode Isi (mA) 150 100 50 0 0 0 25 50 75 100 125 150 175 Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram 13930 t3 ttest t4 tTr = 60 s t1 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT On time IF = ± 10 mA, VCC = 5 V, RL = 75 , 50 % of VPP ton 3 μs Rise time IF = ± 10 mA, VCC = 5 V, RL = 75 , 50 % of VPP tr 20 μs Off time IF = ± 10 mA, VCC = 5 V, RL = 75 , 50 % of VPP toff 2.3 μs Fall time IF = ± 10 mA, VCC = 5 V, RL = 75 , 50 % of VPP tf 2 μs Propagation H to L IF = ± 10 mA, VCC = 5 V, RL = 75 , 50 % of VPP tPHL 1.1 μs Propagation L to H IF = ± 10 mA, VCC = 5 V, RL = 75 , 50 % of VPP tPLH 2.5 μs On time IF = ± 10 mA, VCC = 5 V, RL = 1 k, VTH = 1.5 V, ton 4.3 μs Rise time IF = ± 10 mA, VCC = 5 V, RL = 1 k, VTH = 1.5 V, tr 2.8 μs Off time IF = ± 10 mA, VCC = 5 V, RL = 1 k, VTH = 1.5 V, toff 2.5 μs Fall time IF = ± 10 mA, VCC = 5 V, RL = 1 k, VTH = 1.5 V, tf 11 μs Propagation H to L IF = ± 10 mA, VCC = 5 V, RL = 1 k, VTH = 1.5 V, tPHL 2.6 μs Propagation L to H IF = ± 10 mA, VCC = 5 V, RL = 1 k, VTH = 1.5 V, tPLH 7.2 μs NON-SATURATED SATURATED Rev. 1.8, 12-Apr-13 Document Number: 83653 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) IF I F = 10 mA VCC = 5 V tD tR VO VO f = 10 kHz, t PLH RL = 75 Ω V TH = 1.5 V DF = 50 % tF tS t PHL iild620_04 iild620_01 Fig. 6 - Saturated Switching Timing Fig. 3 - Non-Saturated Switching Timing VCC = 5 V f = 10 kHz, DF = 50 % R L = 1 kΩ VO IF = 10 mA IF - LED Forward Current (mA) 60 40 85 °C 20 25 °C 0 - 55 °C - 20 - 40 - 60 - 1.5 - 1.0 iild620_02 iild620_05 Fig. 4 - Saturated Switching Timing - 0.5 0.0 0.5 1.0 1.5 VF - LED Forward Voltage (V) Fig. 7 - LED Forward Current vs.Forward Voltage IF t PLH VO t PLH tS 50 % tD iild620_03 tF tR t on t off Fig. 5 - Non-Saturated Switching Timing Rev. 1.8, 12-Apr-13 ICEO - Collector Emitter (nA) 105 104 103 102 VCE = 10 V 101 Typical 100 10- 1 10- 2 - 20 iild620_06 0 20 40 60 80 100 TA - Ambient Temperature (°C) Fig. 8 - Collector Emitter Leakage vs. Temperature Document Number: 83653 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB Vishay Semiconductors 120 CTRNF - Normalized CTR Factor IF - Maximum LED Current (mA) www.vishay.com 100 80 60 TJ (max.) = 100 °C 40 20 0 - 60 - 40 - 20 0 20 40 60 150 100 50 iild620_08 20 40 60 ILD/Q620GB 10 5.0 ILD/Q620 1.0 0.5 0.1 1 iild620_09 5 10 1 10 100 IF - LED Current (mA) 2.0 Normalized to: VCE = 10 V, IF = 5 mA CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 70 °C 0.0 0.1 1 10 100 IF - LED Current (mA) Fig. 13 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF 2.0 Normalized to: VCE = 10 V, IF = 5 mA CTRce(sat) VCE = 0.4 V 1.5 1.0 NCTRce 0.5 NCTRce(sat) TA = 100 °C 0.0 20 IF - Forward Current (mA) Fig. 11 - Collector Current vs. Diode Forward Current Rev. 1.8, 12-Apr-13 TA = 50 °C Fig. 12 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF CTRNF - Normalized CTR Factor IC - Normalized Collector Current 100 2.5 NCTRce(sat) 0.5 iild620_11 Fig. 10 - Maximum LED Power Dissipation Normalized IF = 10 mA VCE = 5 V NCTRce 1.0 80 100 Tamb - Ambient Temperature (°C) 50 CTRce(sat) VCE = 0.4 V 0.1 CTRNF - Normalized CTR Factor PLED - LED Power (mW) 200 0 1.5 iild620_10 Fig. 9 - Maximum LED Current vs. Ambient Temperature 0 - 60 - 40 - 20 Normalized to: VCE = 10 V, IF = 5 mA 0.0 80 100 Tamb - Ambient Temperature (°C) iild620_07 2.0 0.1 iild620_12 1 10 100 IF - LED Current (mA) Fig. 14 - Normalization Factor for Non-Saturated and Saturated CTR vs. IF Document Number: 83653 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors 10 000 1000 ICE - Collector Current (mA) IF(pk) - Peak LED Current (mA) τ Duty Factor 0.005 0.01 1000 0.02 0.05 0.1 0.2 0.5 100 t DF = τ/t iild620_13 101 Fig. 15 - Peak LED Current vs. Pulse Duration, PDET - Detector Power (mW) 200 150 100 50 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) iild620_14 25 °C 50 °C 75 °C 1 iild620_15 t - LED Pulse Duration (s) 0 - 60 - 40 - 20 10 90 °C 0.1 0.1 10 10- 6 10- 5 10- 4 10- 3 10- 2 10- 1 100 Rth = 500 °C /W 100 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 17 - Maximum Collector Current vs. Collector Voltage Fig. 16 - Maximum Detector Power Dissipation PACKAGE DIMENSIONS in millimeters Pin one ID 4 3 2 1 5 6 7 8 6.645 ± 0.165 ISO method A 9.77 ± 0.14 0.95 ± 0.19 7.62 typ. 0.79 4° typ. 3.555 ± 0.255 6.095 ± 0.255 1.27 10° 0.70 ± 0.19 0.51 ± 0.05 3.045 ± 0.255 3° to 9° 2.54 typ. 0.25 ± 0.05 Rev. 1.8, 12-Apr-13 i178006 Document Number: 83653 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors Pin one ID 8 7 6 5 4 3 2 1 6.48 6.81 9 10 11 12 13 14 15 16 ISO method A 19.77 20.07 0.76 1.14 0.79 7.62 typ. 3.30 3.81 10° typ. 4° 0.51 0.89 0.46 0.56 2.54 typ. 2.79 3.30 3° to 9° 1.27 0.20 0.30 i178007 Option 7 Option 9 7.62 typ. 10.3 max. 5.84 6.35 7.62 typ. 0.7 min. 4.3 ± 0.3 8 min. 0.1 ± 0.1 3.6 ± 0.3 0.6 min. 10.3 max. 0.6 min. 8 min. 0.76 R 0.25 2.54 0.76 R 0.25 2.54 1.78 8 min. 11.05 20802-16 1.78 1.52 8 min. 11.05 1.52 PACKAGE MARKING (example) ILD620 V YWW H 68 ILQ620 V YWW H 68 21764-95 Notes • Only option 1 and 7 reflected in the package marking. • The VDE logo is only marked on option 1 parts. • Tape and reel suffix (T) is not part of the package marking. Rev. 1.8, 12-Apr-13 Document Number: 83653 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000