ILD615/ ILQ615 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Features • Identical Channel to Channel Footprint • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection • Isolation Test Voltage from Double Molded Package, 5300 VRMS • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Dual Channel Quad Channel Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • CSA 93751 • BSI IEC60950 IEC60965 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 A 1 8 C C 2 7 E A 3 6 C C 4 5 E A 1 16 C C 2 15 E A 3 14 C C 4 13 E A 5 12 C C 6 11 E A 7 10 C C 8 9 E i179052 Description The ILD615/ ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS. The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD615/ ILQ615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for Document Number 83652 Rev. 1.3, 19-Apr-04 both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA. www.vishay.com 1 ILD615/ ILQ615 VISHAY Vishay Semiconductors Order Information Part Remarks ILD615-1 CTR 40 - 80 %, Dual Channel, DIP-8 ILD615-2 CTR 63 - 125 %, Dual Channel, DIP-8 ILD615-3 CTR 100 - 200 %, Dual Channel, DIP-8 ILD615-4 CTR 160 - 320 %, Dual Channel, DIP-8 ILQ615-1 CTR 40 - 80 %, Quad Channel, DIP-16 ILQ615-2 CTR 63 - 125 %, Quad Channel, DIP-16 ILQ615-3 CTR 100 - 200 %, Quad Channel, DIP-16 ILQ615-4 CTR 160 - 320 %, Quad Channel, DIP-16 ILD615-1X007 CTR 40 - 80 %, Dual Channel, SMD-8 (option 7) ILD615-2X006 CTR 63 - 125 %, Dual Channel, DIP-8 400 mil (option 6) ILD615-2X009 CTR 63 - 125 %, Dual Channel, SMD-8 (option 9) ILD615-3X006 CTR 100 - 200 %, Dual Channel, DIP-8 400 mil (option 6) ILD615-3X007 CTR 100 - 200 %, Dual Channel, SMD-8 (option 7) ILD615-3X009 CTR 100 - 200 %, Dual Channel, SMD-8 (option 9) ILD615-4X006 CTR 160 - 320 %, Dual Channel, DIP-8 400 mil (option 6) ILD615-4X009 CTR 160 - 320 %, Dual Channel, SMD-8 (option 9) ILQ615-1X009 CTR 40 - 80 %, Quad Channel, SMD-16 (option 9) ILQ615-2X007 CTR 63 - 125 %, Quad Channel, SMD-16 (option 7) ILQ615-3X006 CTR 100 - 200 %, Quad Channel, DIP-16 400 mil (option 6) ILQ615-3X009 CTR 100 - 200 %, Quad Channel, SMD-16 (option 9) ILQ615-4X007 CTR 160 - 320 %, Quad Channel, SMD-16 (option 7) ILQ615-4X009 CTR 160 - 320 %, Quad Channel, SMD-16 (option 9) For additional information on the available options refer to Option Information. www.vishay.com 2 Document Number 83652 Rev. 1.3, 19-Apr-04 ILD615/ ILQ615 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter Test condition VR 6.0 V Forward current IF 60 mA Surge current IFSM 1.5 A Power dissipation Pdiss Derate linearly from 25 °C Unit 100 mW 1.33 mW/°C Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 70 V Emitter-collector breakdown voltage BVECO 7.0 V Collector current t < 1.0 ms Power dissipation IC 50 mA IC 100 mA Pdiss 150 mW 2.0 mW/°C Derate linearly from 25 °C Coupler Symbol Value Unit Storage temperature Parameter Test condition Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Package power dissipation, ILD615 400 mW Derate linearly from 25 °C 5.33 mW/°C Package power dissipation, ILQ615 500 mW Junction temperature Soldering temperature 2.0 mm distance from case bottom Derate linearly from 25 °C 6.67 mW/°C 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation test voltage Isolation resistance Document Number 83652 Rev. 1.3, 19-Apr-04 t = 1.0 sec. VISO VIO = 500 V, Tamb = 25 °C RIO VIO = 500 V, Tamb = 100 °C RIO ≥ 1012 Ω 11 Ω ≥ 10 www.vishay.com 3 ILD615/ ILQ615 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Symbol Min Typ. Max Forward voltage Parameter IF = 10 mA Test condition VF 1.0 1.15 1.3 Breakdown voltage IR = 10 µA VBR 6.0 30 Unit V V µA Reverse current VR = 6.0 V IR 0.01 Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF RTHJL 750 K/W Thermal resistance, junction to lead 10 Output Parameter Test condition Symbol Min Typ. Max Unit 2.0 50 nA 5.0 100 nA Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 Collector-emitter leakage current, -1, -2 VCE = 10 V ICEO Collector-emitter leakage current, -3, -4 VCE = 10 V ICEO Collector-emitter breakdown voltage ICE = 0.5 mA BVCEO 70 V Emitter-collector breakdown voltage IE = 0.1 mA BVECO 7.0 V Thermal resistance, junction to lead pF 500 RTHJL K/W Package transfer characteristics Channel/Channel CTR match IF = 10 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 Symbol Min 2 to 1 Coupler Parameter Test condition Capacitance (input-output) VIO = 0 V, f = 1.0 MHz CIO Insulation resistance VIO = 500 V, TA = 25 °C RS Channel to channel isolation Typ. Max Unit 0.8 1012 pF Ω 1014 500 VAC Current Transfer Ratio Parameter Current Transfer Ratio (collector-emitter saturated) www.vishay.com 4 Test condition IF = 10 mA, VCE = 0.4 V Part Symbol ILD615-1 ILQ615-1 CTRCEsat Min Typ. 25 Max Unit % ILD615-2 ILQ615-2 CTRCEsat 40 % ILD615-3 ILQ615-3 CTRCEsat 60 % ILD615-4 ILQ615-4 CTRCEsat 100 % Document Number 83652 Rev. 1.3, 19-Apr-04 ILD615/ ILQ615 VISHAY Vishay Semiconductors Parameter Test condition Current Transfer Ratio (collector-emitter) Part Symbol Min Typ. Max Unit IF = 10 mA, VCE = 5.0 V ILD615-1 ILQ615-1 CTRCE 40 60 80 % IF = 1.0 mA, VCE = 5.0 V ILD615-2 ILQ615-2 CTRCE 13 30 IF = 10 mA, VCE = 5.0 V ILD615-3 ILQ615-3 CTRCE 63 80 IF = 1.0 mA, VCE = 5.0 V ILD615-4 ILQ615-4 CTRCE 22 45 IF = 10 mA, VCE = 5.0 V ILD615-1 ILQ615-1 CTRCE 100 150 IF = 1.0 mA, VCE = 5.0 V ILD615-2 ILQ615-2 CTRCE 34 70 IF = 10 mA, VCE = 5.0 V ILD615-3 ILQ615-3 CTRCE 160 200 IF = 1.0 mA, VCE = 5.0 V ILD615-4 ILQ615-4 CTRCE 56 90 % 125 % % 200 % % 320 % % Switching Non-saturated Parameter Current Turn-on time Rise time Turn-off time Fall time Propagation H-L Propagation L-H tPLH VCC = 5.0 V, RL = 75 Ω, 50 % of VPP Test condition Symbol IF ton tr toff tf tPHL Unit mA µs µs µs µs µs µs ILD615-1 10 3.0 2.0 2.3 2.0 1.1 2.5 Current Turn-on time Rise time Turn-off time Fall time Propagation H-L Propagation L-H Symbol IF ton tPHL tPLH Switching Saturated Parameter Test condition VCC = 5.0 V, RL = 1.0 kΩ, VTH = 1.5 V tr toff tf Unit mA µs µs µs µs µs µs ILD615-1 ILQ615-1 20 3.0 2.0 18 11 1.6 8.6 ILD615-2 ILQ615-2 10 4.3 2.8 25 14 2.6 7.2 ILD615-3 ILQ615-3 10 4.3 2.8 25 14 2.6 7.2 ILD615-4 ILQ615-4 5.0 6.0 4.6 25 15 5.4 7.4 Common Mode Transient Immunity Parameter Test condition Symbol Min Typ. Max Unit Common mode rejection output high VCM = 50 VP-P, RL = 1.0 kΩ, IF = 0 mA CMH 5000 V/µs Common mode rejection output low VCM = 50 VP-P, RL = 1.0 kΩ, IF = 10 mA CML 5000 V/µs CCM 0.01 pF Common mode coupling capacitance Document Number 83652 Rev. 1.3, 19-Apr-04 www.vishay.com 5 ILD615/ ILQ615 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF VCC = 5 V IF = 10 mA F = 10 KHz, DF = 50% VO tD tR VO RL = 75 Ω t PLH VTH = 1.5 V tF tS t PHL iild615_01 iild615_04 Figure 1. Non-saturated Switching Timing Figure 4. Saturated Switching Timing F = 10 KHz, DF = 50% IF - Maximum LED Current - mA 120 VCC = 5 V RL VO 100 80 60 TJ (MAX) = 100 °C 40 20 0 -60 iild615_02 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - °C iild615_05 Figure 2. Saturated Switching Timing Figure 5. Maximum LED Current vs. Ambient Temperature 200 tPLH VO tPLH tS 50% tD iild615_03 toff Figure 3. Non-saturated Switching Timing www.vishay.com 6 150 100 50 0 -60 -40 tF tR ton PLED - LED Power - mW IF iild615_06 -20 0 20 40 60 Ta - Ambient Temperature - °C 80 100 Figure 6. Maximum LED Power Dissipation Document Number 83652 Rev. 1.3, 19-Apr-04 ILD615/ ILQ615 VISHAY Vishay Semiconductors 1000 VF - Forward Voltage - V 1. 3 ICE - Collector Current - mA 1.4 Ta = –55 °C 1.2 Ta = 25 °C 1.1 1.0 0.9 Ta = 85° C 0.8 10 25 °C 50 °C 75 °C 90 °C 1 .1 .1 0.7 .1 1 10 IF - Forward Current - mA 100 10 1 VCE - Collector-Emitter Voltage - V 100 iild615_10 iild615_07 Figure 10. Maximum Collector Current vs. Collector Voltage 10000 CTRNF - Normalized CTR Factor Figure 7. Forward Voltage vs. Forward Current If(pk) - Peak LED Current - mA Rth = 500 °C/W 100 τˇ Duty F actor .005 .01 .02 .05 .1 .2 .5 1000 100 t τ DF = /t 2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 25 °C 0.0 .1 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 IF - LED Current - mA 100 t - LED Pulse Duration - s iild615_08 iild615_11 200 PDET - Detector Power - mW Figure 11. Normalization Factor for Non-saturated and Saturated CTR vs. IF CTRNF - Normalized CTR Factor Figure 8. Peak LED Current vs. Pulse Duration, Tau 150 100 50 2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 NCTRce 1.0 NCTRce(sat) 0.5 TA = 50 °C 0.0 .1 0 -60 -40 -20 0 20 40 60 80 100 1 10 IF - LED Current - mA 100 Ta - Ambient Temperature - °C iild615_09 iild615_12 Figure 9. Maximum Detector Power Dissipation Document Number 83652 Rev. 1.3, 19-Apr-04 Figure 12. Normalization Factor for Non-saturated and Saturated CTR vs. IF www.vishay.com 7 ILD615/ ILQ615 VISHAY 10 5 2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 ICEO - Collector-Emitter - nA CTRNF - Normalized CTR Factor Vishay Semiconductors NCTRce 1.0 NCTRce(sat) 0.5 TA = 70 °C 0.0 .1 1 10 IF - LED Current - mA 10 4 10 3 10 2 Vce = 10 V 10 1 Typical 10 0 10 -1 100 10 -2 -20 0 20 40 60 80 100 TA - Ambient Temperature - °C iild615_16 Figure 16. Collector Emitter Leakage vs. Temperature 1000 2.0 Normalized to: VCE = 10 V, IF = 5 mA, CTRce(sat) VCE = 0.4 V 1.5 1.0 NCTRce 0.5 NCTRce(sat) TA = 100 °C 0.0 .1 1 10 IF - LED Current - mA tpLH - Propagation Low-High µs CTRNF - Normalized CTR Factor Figure 13. Normalization Factor for Non-saturated and Saturated CTR vs. IF 4.0 IF = 10 mA VCC = 5 V, Vth = 1.5 V 3.5 3.0 100 tpLH 2.5 2.0 10 tpHL 1.5 100 1 tpHL - Propagation High-Low µs iild615_13 1.0 .1 1 10 100 RL - Load Resistor - kΩ iild615_14 iild615_17 Figure 17. -1, Propagation Delay vs. Collector Load Resistor 1000 tpLH - Propagation Low-High µs ICE - Collector Current - mA 35 30 25 50°C 20 15 70°C 25°C 85°C 10 5 100 2.0 tpLH 10 1.5 tpHL 1 0 0 10 iild615_15 20 30 40 50 www.vishay.com 1.0 .1 60 IF - LED Current - mA Figure 15. Collector-Emitter Current vs. Temperature and LED Current 8 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V tpHL - Propagation High-Low µs Figure 14. Normalization Factor for Non-saturated and Saturated CTR vs. IF 1 10 100 RL - Collector Load Resistor - kΩ iild615_18 Figure 18. -2, -3, Propagation Delay vs. Collector Load Resistor Document Number 83652 Rev. 1.3, 19-Apr-04 ILD615/ ILQ615 VISHAY Vishay Semiconductors Figure 19. -4, Propagation Delay vs. Collector Load Resistor 2.5 IF = 10 mA VCC = 5 V, Vth = 1.5 V 100 2.0 tpLH 10 1.5 tpHL 1 tpHL - Propagation High-Low µs tpLH - Propagation Low-High µs 1000 1.0 .1 1 10 100 RL - Collector Load Resistor - kΩ iild615_19 Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 Document Number 83652 Rev. 1.3, 19-Apr-04 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3°–9° .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) www.vishay.com 9 ILD615/ ILQ615 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4° .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10° typ. 3°–9° .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) i178007 Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 10 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83652 Rev. 1.3, 19-Apr-04 ILD615/ ILQ615 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83652 Rev. 1.3, 19-Apr-04 www.vishay.com 11