ZXTN25020DFL

ZXTN25020DFL
20V, SOT23, NPN low power transistor
Summary
BVCEX > 100V
BVCEO > 20V
BVECO > 5V
IC(cont) = 2A
ICM = 8A
VCE(sat) < 70mV @ 1A
RCE(sat) = 55m⍀
PD = 350mW
Complementary part number ZXTP25020DFL
Description
C
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
B
Features
•
High peak current
•
Low saturation voltage
•
100V forward blocking voltage
E
Applications
E
•
MOSFET and IGBT gate driving
•
DC-DC conversion
•
LED driving
•
Interface between low voltage IC's and loads
C
B
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
ZXTN25020DFLTA
Device marking
1A1
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ZXTN25020DFL
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage (forward blocking)
VCEX
100
V
Collector-emitter voltage
VCEO
20
V
Emitter-collector voltage (reverse blocking)
VECO
5
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(a)
IC
2
A
Base current
IB
500
mA
Peak pulse current
ICM
8
A
Power dissipation at Tamb =25°C(a)
PD
350
mW
2.8
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
R⍜JA
357
°C/W
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient(a)
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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ZXTN25020DFL
Characteristics
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
100
125
V
IC = 100␮A
Collector-emitter breakdown BVCEX
voltage (forward blocking)
100
120
V
IC = 100 A; RBE < 1k⍀ or
-1V < VBE < 0.25V
Collector-emitter breakdown BVCEO
voltage (base open)
20
35
V
IC = 10mA (*)
Emitter-collector breakdown BVECX
voltage (reverse blocking)
6
8
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown BVECO
voltage (base open)
5
6
V
IE = 100␮A,
Emitter-base breakdown
voltage
BVEBO
7
8.3
V
IE = 100␮A
Collector cut-off current
ICBO
<1
50
20
nA
␮A
VCB = 80V
VCB = 80V, Tamb= 100°C
Collector-emitter cut-off
current
ICEX
-
100
nA
VCE = 80V; RBE < 1k⍀ or
-1V < VBE < 0.25V
Emitter cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(SAT)
60
70
mV
IC = 1A, IB = 100mA(*)
85
100
mV
IC = 1A, IB = 20mA(*)
140
160
mV
IC = 2A, IB = 40mA(*)
180
225
mV
IC = 2A, IB = 20mA(*)
245
270
mV
IC = 4,5A, IB = 450mA(*)
VBE(SAT)
895
1000
mV
IC = 2A, IB = 40mA(*)
Base-emitter turn-on voltage VBE(ON)
825
900
mV
IC = 2A, VCE = 2V(*)
300
450
900
220
350
IC = 2A, VCE = 2V(*)
80
120
IC = 4.5A, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
Base-emitter saturation
voltage
Static forward current
transfer ratio
hFE
Transition frequency
fT
215
Output capacitance
COBO
16.5
Delay time
t(d)
Rise time
Max.
25
Unit Conditions
IC = 10mA, VCE = 2V(*)
pF
VCB = 10V, f = 1MHz(*)
67.7
ns
t(r)
72.2
ns
VCC = 10V. IC = 1A,
IB1 = IB2= 10mA.
Storage time
t(s)
361
ns
Fall time
t(f)
63.9
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ 2%.
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ZXTN25020DFL
Typical characteristics
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ZXTN25020DFL
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
L
A1
Dim.
c
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN25020DFL
Definitions
Product change
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service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
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tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
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Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
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blank
Zetex Semiconductors does not warrant or accept any liability
whatsoever inleft
respect
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ESD (Electrostatic discharge)
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The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
Issue 4 - January 2007
© Zetex Semiconductors plc 2007
7
www.zetex.com
ZXTN25020DFL
Issue 4 - January 2007
© Zetex Semiconductors plc 2007
8
www.zetex.com