ZXTN25020DFH

ZXTN25020DFH
20V SOT23 NPN medium power transistor
Summary
BVCEX > 100V; BV(BR)CEO > 20V
BVECO > 5V;
IC(CONT) = 4.5A
RCE(sat) = 28 m⍀ typical
VCE(sat) < 43 mV @ 1A;
PD = 1.25W
Complementary part number ZXTP25020DFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
Higher power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
100V forward blocking voltage
•
5V reverse blocking voltage
E
Applications
E
•
DC - DC converters
•
MOSFET and IGBT gate driving
•
LED driver
•
Motor drive
•
Relay, lamp and solenoid drive
C
B
Pinout - top view
Ordering information
Device
ZXTN25020DFHTA
Reel size
(inches)
Tape width
Quantity per reel
7
8mm
3000
Device marking
016
Issue 2 - May 2006
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ZXTN25020DFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage (forward blocking)
VCEX
100
V
Collector-emitter voltage
VCEO
20
V
Emitter-collector voltage (reverse blocking)
VECO
5
V
Emitter-base voltage
VEBO
7
V
Continuous collector current (c)
IC
4.5
A
Base current
IB
1
A
Peak pulse current
ICM
15
A
Power dissipation at TA =25°C (a)
PD
0.73
W
5.84
mW/°C
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
1.81
W
14.5
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient (a)
R⍜JA
171
°C/W
Junction to ambient (b)
R⍜JA
119
°C/W
Junction to ambient (c)
R⍜JA
100
°C/W
Junction to ambient (d)
R⍜JA
69
°C/W
Linear derating factor
PD
Power dissipation at TA =25°C (b)
Linear derating factor
PD
Power dissipation at TA =25°C (c)
Linear derating factor
PD
Power dissipation at TA =25°C (d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN25020DFH
Characteristics
Issue 2 - May 2006
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ZXTN25020DFH
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol Min.
Collector emitter breakdown
voltage (base open)
BVCEO
20
35
V
IC = 10mA (*)
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
8
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
5
6
V
IE = 100mA,
Emitter base breakdown voltage BVEBO
Collector cut-off current
ICBO
7
8.3
V
IE = 100mA
Collector emitter cut-off current ICEX
Typ.
Max.
Unit Conditions
<1
50
20
nA
␮A
VCB = 100V
VCB = 100V, TAMB= 100°C
-
100
nA
VCE = 100V; RBE < 1k⍀ or
-1V < VBE < 0.25V
Emitter cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector emitter saturation
voltage
VCE(sat)
35
43
mV
IC = 1A, IB = 100mA(*)
55
70
mV
IC = 1A, IB = 20mA(*)
90
110
mV
IC = 2A, IB = 40mA(*)
125
170
mV
IC = 2A, IB = 20mA(*)
125
150
mV
IC = 4,5A, IB = 450mA (*)
205
265
mV
IC = 4.5A, IB = 90mA(*)
Base emitter saturation voltage
VBE(sat)
900
1000
mV
IC = 4.5A, IB = 90mA(*)
Base emitter turn-on voltage
VBE(on)
820
900
mV
IC = 4.5A, VCE = 2V(*)
Static forward current transfer
ratio
hFE
300
450
900
250
380
IC = 2A, VCE = 2V(*)
120
170
IC = 4.5A, VCE = 2V(*)
15
IC = 15A, VCE = 2V(*)
Transition frequency
fT
215
Output capacitance
COBO
16.5
IC = 10mA, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
25
pF
VCB = 10V, f = 1MHz(*)
VCC = 10V. IC = 1A,
IB1 = IB2= 10mA.
Delay time
t(d)
68
ns
Rise time
t(r)
72
ns
Storage time
t(s)
361
ns
Fall time
t(f)
64
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Issue 2 - May 2006
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4
www.zetex.com
ZXTN25020DFH
Characteristics
Issue 2 - May 2006
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ZXTN25020DFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Germany
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USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 - May 2006
© Zetex Semiconductors plc 2006
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