ZXTN19020CFF 20V NPN HIGH GAIN POWER TRANSISTOR IN SOT23F Features Mechanical Data BVCEO > 20V BVCEX > 65V BVECO > 4.5V IC = 7A Continuous Collector Current Very Low VCE(SAT) < 30mV @ 1A RCE(SAT) = 18mΩ 1.5W Power Dissipation High Forward Blocking Voltage High Gain Complementary PNP Type: ZXTP19020CFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23F Case Material: Molded Plastic. ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.012 grams (Approximate) Applications Description MOSFET and IGBT Gate Driving LED Driving Strobe Flash Motor Drive Micro Buffers Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. SOT23F C E C B B E Device Symbol Top View Top View Pin Configuration Ordering Information (Note 4) Part Number ZXTN19020CFFTA Notes: Compliance AEC-Q101 Marking 1E2 Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 1E2 ZXTN19020CFF Document number: DS33676 Rev. 2 - 2 YW SOT23F 1E2 = Product Type Marking Code YW = Date Code Marking Y = Year : 0~9 W = Week : A~Z : 1~26 a~z : 27~52 z represents 52 & 53 week 1 of 7 www.diodes.com June 2016 © Diodes Incorporated ZXTN19020CFF Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage (Forward Blocking) Collector-Emitter Voltage (Base Open) Emitter-Collector Voltage (Reverse Blocking) Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Symbol VCBO VCEX VCEO VECO VEBO IC ICM IB Value 65 65 20 4.5 7 7 15 1 Unit V V V V V A A A Value 0.84 6.72 1.34 10.72 1.50 12.0 2.0 16.0 149 93 83 60 43.8 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) Power Dissipation Linear Derating Factor (Note 6) PD (Note 7) (Note 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range (Note 5) (Note 6) (Note 7) (Note 8) (Note 9) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C ESD Ratings (Note 10) Characteristic Electrostatic Discharge – Human Body Model Electrostatic Discharge – Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN19020CFF Document number: DS33676 Rev. 2 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated ZXTN19020CFF Thermal Characteristics and Derating Information 50mmx50mm FR-4, 2oz Cu IC Collector Current (A) IC Collector Current (A) 1m VCE(sat) 10 Limited 1 DC Failure may occur in this region µ 100μ 1s 100ms 100m 10ms Single Pulse o T amb=25 C 1ms 100s 10m 100m 1 BV(BR)CEO=20V µ 10μ µ 1μ 10 0 VCE Collector-Emitter Voltage (V) 40 60 Safe Operating Area 80 o 70 60 Tamb=25 C Maximum Power (W) o Thermal Resistance ( C/W) 20 VCE Collector-Emitter Voltage (V) Safe Operating Area 50mmx50mm FR-4, 2oz Cu 50 D=0.5 40 30 D=0.2 Single Pulse 20 D=0.05 10 0 100μ µ D=0.1 1m 10m 100m 1 10 100 1k 100 Single Pulse o Tamb=25 C, 50mmx50mm FR-4, 2oz Cu 10 1 100μ µ Pulse Width (s) 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) BV(BR)CEX=65V o T amb=25 C Pulse Power Dissipation 1.6 1.4 50mmx50mm FR-4, 2oz Cu 1.2 1.0 25mmx25mm FR-4, 2oz Cu 0.8 0.6 0.4 0.2 0.0 0 15mmx15mm FR-4, 1oz Cu 20 40 60 80 100 120 140 160 o Temperature ( C) Derating Curve ZXTN19020CFF Document number: DS33676 Rev. 2 - 2 3 of 7 www.diodes.com June 2016 © Diodes Incorporated ZXTN19020CFF Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Forward Blocking Collector-Emitter Breakdown Voltage (Base Open) (Note 11) Emitter-Base Breakdown Voltage Emitter – Collector Breakdown Voltage (Reverse Blocking) Emitter – Collector Breakdown Voltage (Base Open) Symbol Min Typ Max Unit BVCBO 65 85 — V BVCEX 65 85 — V BVCEO 20 25 — V IC = 10mA BVEBO 7 8.3 — V BVECX 6 8.2 — V IE = 100µA IE = 100µA, RBC < 1kΩ, or VBC = ±0.25V BVECO 4.5 5.3 — V IE = 100µA Collector-Base Cut-off Current ICBO — <1 — 50 20 nA µA Collector-Base Cut-off Current ICEX — <1 100 Emitter-Base Cut-off Current ON CHARACTERISTICS (Note 11) IEBO — <1 50 VCB = 50V VCB = 50V, TA = +100°C VCE = 50V, RBE < 1kΩ or -1V < VBE < 0.25V VEB = 5.6V hFE 200 180 100 45 350 340 220 95 500 — — 30 65 70 175 mV Static Forward Current Transfer Ratio nA — — Collector-Emitter Saturation Voltage VCE(SAT) — 23 45 55 135 Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS VBE(SAT) VBE(ON) — — 960 840 1050 950 mV mV Transition Frequency fT — 150 — MHz Input Capacitance Output Capacitance Delay Time Rise Time Storage Time Fall Time CIBO COBO tD tR tS tF — — — — — — 315 40 135 117 285 88 — 50 — — — — pF pF ns ns ns ns Note: Test Condition IC = 100µA IC = 100µA, RBE < 1kΩ, or -1V < VBE < 0.25V IC = 0.1A, VCE = 2V IC = 2A, VCE = 2V IC = 7A, VCE = 2V IC = 15A, VCE = 2V IC = 1A, IB = 100mA IC = 1A, IB = 10mA IC = 2A, IB = 40mA IC = 7A, IB = 280mA IC = 7A, IB = 280mA IC = 7A, VCE = 2V IC = 50mA, VCE = 10V, f = 50MHz VEB = 0.5V, f = 1MHz VCB = 10V, f = 1MHz VCC = 10V, IC = 1A, IB1 = - IB2 = 10mA 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTN19020CFF Document number: DS33676 Rev. 2 - 2 4 of 7 www.diodes.com June 2016 © Diodes Incorporated ZXTN19020CFF Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 o IC/IB=10 0.4 IC/IB=100 100m VCE(SAT) (V) VCE(SAT) (V) Tamb=25 C IC/IB=50 10m IC/IB=25 o 150 C 0.3 o 100 C 0.2 0.1 o 25 C IC/IB=10 10m 100m 1 VCE=2V 150 C o 100 C o 25 C 0.6 0.4 o -55 C 0.2 0.0 1m 1.0 10 VCE(SAT) v IC 1.0 0.8 1 VCE(SAT) v IC 1.4 1.2 100m IC Collector Current (A) 10m 100m 1 600 550 500 450 400 350 300 250 200 150 100 50 0 1.2 IC/IB=10 o -55 C VBE(SAT) (V) Normalised Gain 10 IC Collector Current (A) o 1.6 o -55 C 0.0 10m Typical Gain (h FE) 1m 1m 1.0 o 25 C 0.8 0.6 o 100 C o 0.4 10 1m 150 C 10m 100m 1 IC Collector Current (A) IC Collector Current (A) hFE v IC VBE(SAT) v IC VCE=2V 10 o -55 C o VBE(ON) (V) 25 C 0.8 0.6 o 100 C 0.4 o 150 C 0.2 1m 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXTN19020CFF Document number: DS33676 Rev. 2 - 2 5 of 7 www.diodes.com June 2016 © Diodes Incorporated ZXTN19020CFF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23F D c b SOT23F Dim Min Max Typ A 0.80 1.00 0.90 A1 0.00 0.10 0.01 b 0.35 0.50 0.44 c 0.10 0.20 0.16 D 2.80 3.00 2.90 e 0.95 REF e1 1.90 REF E 2.30 2.50 2.40 E1 1.50 1.70 1.65 k 1.20 L 0.30 0.65 0.50 L1 0.30 0.50 0.40 R 0.05 0.15 All Dimensions in mm L1 E1 E b e1 A1 e R L A k Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23F X C Dimensions C X Y Y1 Y1 Value (in mm) 0.95 0.80 1.110 3.000 Y ZXTN19020CFF Document number: DS33676 Rev. 2 - 2 6 of 7 www.diodes.com June 2016 © Diodes Incorporated ZXTN19020CFF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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