PAM8019 3W STEREO CLASS-D AUDIO AMPLIFIER AND CLASS AB HEADPHONE DRIVER WITH DC VOLUME CONTROL, NON-CLIP POWER LIMIT AND UVP Pin Assignments The PAM8019 is a Stereo 3W Class D audio power amplifier for driving bridged-tied speakers and includes a Stereo Class AB amplifier for driving headphones. The advanced 64 step DC volume control minimizes external components allowing simple and accurate volume control over the gain range of +20dB (Volume=0V) to -60dB (Volume=5V). VDD LOUTP GND ROUTP 20 VDD Top View Integrated non-clip power limit technology suppresses output automatically with programmable power limit, improving the sound quality and helping to protect the speakers. Programmable under voltage protection (UVP) can be used to shut down the PAM8019 at a pre-determined voltage level helping to eliminate speaker pop by shutting down before the power supply collapses. ROUTN 1 LOUTN HPLOUT HPROUT Bypass UVP 3W Stereo Class D Amplifier with Class AB Headphone Amplifier Filter Free and Low EMI Architecture Operating Voltage: 2.8V to 5.5V Low Quiescent Current of 7mA at a VDD of 5V 64 Step DC Volume Control with Hysteresis from -60dB to +20dB Output Power Class D Amplifier THD+N=1% VDD=5V,Load =4Ω; Po=2.4W / Load =8Ω; Po=1.4W Class D Amplifier THD+N=10% VDD=5V, Load =4Ω; Po=3.0W / Load =8Ω; Po=1.7W Class AB Headphone Amplifier VDD=5V, Load=32Ω; Po=60mW Speaker or Headphone Select Non Clip Power Limit (NCPL) Function OVP and Programmable UVP Protection Thermal and Over-Current Protection with Auto-Recovery Power Enhance Package U-QFN4040-20 Lead Free and Green Devices Available (RoHS Compliant) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green Device (Note 3) Notes: HP/SPK Mute Features LIN PL Volume RIN The PAM8019 is available in the power efficient and space saving U-QFN4040-20. VDD GND SD GND INFORMATION ADVANCED NEW PRODUCT Description Applications LCD Monitors and TVs Projectors / All-In-One Computers Portable / Active Speakers Portable DVD Players / Game Machines 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimonyfree, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. PAM8019 Document number: DS38822 Rev. 1 - 2 1 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Typical Applications Circuit VDD VDD VDD 13 16 LIN Left Channel Input Signal Volume Control 7 Ci1 1mF 3 SD PWM Modulator Shut Down Mute 9 VDD R7 PL 11 R8 4 Power Limit Volume 8 Bypass 15 LOUTN Speaker 4 Ω CS3 0.1mF 20 Volume Control Gate Driver PWM Modulator Volume Control 5 Ci2 1mF VDD Gate Driver LOUTP Bias and Vref RIN Right Channel Input Signal 17 Short Crt. Protect CB 2.2mF R6 50kΩ VDD Gate Driver Over Temp. Protection Mute C1 1mF Bypass CS1 0.1mF CS2 0.1mF + Controller INFORMATION ADVANCED NEW PRODUCT CS4 0.1mF VDD 19 ROUTP + Gate Driver Controller 1 ROUTN Speaker 4 Ω R4 100kΩ HP/SPK HP/Spk Controller 10 R5 14 C2 220mF OSC. UVLO 2 12 C3 220mF 6, 18 GND R3 R2 HPLOUT HPROUT R1 VDD PAM8019 Document number: DS38822 Rev. 1 - 2 2 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Pin Descriptions INFORMATION ADVANCED NEW PRODUCT Pin Number Name 3 SD 4 Bypass Full Chip Shutdown Control Input (Active Low) 5 RIN 6, 18 GND 7 LIN 8 Volume 9 Mute 10 HP/S 11 PL 12 UVP 13,16,20 VDD Function Bias Voltage for Power Amplifier Negative Input of Right Channel Power Amplifier Ground Connection Negative Input of Left Channel Power Amplifier Internal Gain Setting Input Connect to VDD which Set Max. Gain = +20dB Mute Control Signal Input (Active High) Output Mode Control Input High for Headphone Mode and Low for Speaker Mode Power limit reference voltage, see applications section for further details Under Voltage Protection Input See applications section for further details Supply Voltage 14 HPLOUT Headphone - Left Channel Output 2 HPROUT Headphone - Right Channel Output 15 LOUTN Power Amplifier - Left Channel Negative Output 17 LOUTP Power Amplifier - Left Channel Positive Output 19 ROUTP Power Amplifier - Right Channel Negative Output 1 ROUTN Power Amplifier - Right Channel Positive Output PAD GND Connect to ground (recommended) or No Connect. Functional Block Diagram VDD Volume Control LIN PWM Modulator Shut Down Mute Mute PL Power Limit Bypass Bypass Volume Volume Control LOUTN Short Crt. Protect Bias and Vref VDD PWM Modulator Volume Control HP/Spk Controller Gate Driver ROUTP Gate Driver ROUTN + Controller HP/SPK Gate Driver Over Temp. Protection RIN LOUTP + Controller SD Gate Driver UVLO OSC. HPLOUT HPROUT PAM8019 Document number: DS38822 Rev. 1 - 2 3 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4) Symbol Parameter VDD V -0.3 to VDD + 0.3 TJ Input Voltage LIN, RIN, SD, Mute, HP/S Maximum Junction Temperature TSTG Storage Temperature Range TSDR Maximum Soldering Temperature Range, 5 Seconds Notes: Unit -0.3 to 6.0 Supply Voltage VDD VIN INFORMATION ADVANCED NEW PRODUCT Rating +150 - 65 to +150 °C +300 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter VDD Supply Voltage Range VIH High Level Threshold Voltage VIL Low Level Threshold Voltage VICM Common Mode Input Voltage SD, MUTE HP/S SD, MUTE HP/S Max Unit 2.8 to 5.5 V 2 to VDD V 0.8 x VDD to VDD V 0 to 0.8 V 0 to 1.0 V 1 to VDD - 1 V TA Ambient Operation Temperature Range -40 to +85 TJ Junction Temperature Range -40 to +125 °C Thermal Information (@TA = +25°C, unless otherwise specified.) Symbol Parameter θJA Thermal Resistance – Junction to Ambient θJC Ambient Operation Temperature Range PAM8019 Document number: DS38822 Rev. 1 - 2 QFN4040-20 QFN4040-20 4 of 12 www.diodes.com Typical Value Unit 45 °C/W 7 °C/W May 2016 © Diodes Incorporated PAM8019 INFORMATION ADVANCED NEW PRODUCT Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = Max., RL=8Ω, unless otherwise specified.) Symbol Parameter Supply Voltage Range VDD Speaker Mode Quiescent Current (BTL) IQ Quiescent Current (SE) IQ Mute Current (BTL) IMUTE Mute Current (SE) IMUTE Shutdown Current ISD Oscillator Frequency FOSC RI Input Resistance (BTL) RI Input Resistance (SE) Output Offset Voltage VOS Condition Min 2.8 Typ - Max 5.5 Unit V 200 - 7 4 3 4 250 10 1 300 33 56 - mA mA mA mA µA KHz KΩ KΩ mV - 0.26 - - 0.19 - - 0.28 - - 0.21 - - 0.29 - - 0.21 - 1.5 2.8 - 1.72 1.7 3.0 0.08 0.08 - - - 61 - dB 85 80 - -82 90 88 180 270 83 - dB µV µV dB No load THD+N=1%, Rl=32Ω, f=1KHz - 2.5 60 - V mW Rl=32Ω, Po=50mW, f=1KHz - 0.02 - % Power Supply Ripple Rejection Input AC-GND,F=1KHz,VPP=200mV - 75 - dB CS Channel Separation VN Noise PO =1W, f=1KHz Input AC-GND, A-weighting Non A-weighting F=20 ~ 20KHz, THD=1% - -87 74 58 89 - dB µV µV dB 1.4 1.4 - +150 +108 0.6 0.6 - V V V V °C °C THD+N Total Harmonic Distortion Plus Noise VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=0V, No Load Gain=20dB Gain=3.5dB No load VDD =5.5V, IDS=0.8A P MOSFET VDD =5.5V, IDS=0.8A N MOSFET VDD =4.5V, IDS=0.6A P MOSFET VDD =4.5V, IDS=0.6A N MOSFET VDD =3.6V, IDS=0.4A P MOSFET VDD =3.6V, IDS=0.4A N MOSFET Bypass Capacitor, CB=2.2µF THD+N=10%, f=1KHz, Rl=8Ω THD+N=10%, f=1KHz, Rl=4Ω Rl=8Ω, Po=0.8W, f=1KHz Rl=4Ω, Po=1.6W, f=1KHz PSRR Power Supply Ripple Rejection Input AC-GND, f=1KHz, VPP=200mV CS Channel Separation η Efficiency VN Noise VDD =1W, f=1KHz PO =1.7W, f=1KHz, Rl=8Ω PO =3W, f=1KHz, Rl=4Ω Input AC-GND, A-weighting Non A-weighting F=20 ~ 20KHz, THD=1% RDS(ON) TSTART UP PO SNR Drain – Source On-State Resistance Startup Time from Shutdown Output Power Signal Noise Ratio Head Phone Mode Output Offset Voltage VOS Output Power PO Total Harmonic Distortion Plus THD+N Noise PSRR SNR Signal Noise Ratio Ω S W % % Control Section VIH VIL VMH VML OTP OTH SD Input High SD Input Low Mute Input High Mute Input Low Over Temperature Protection Over Temperature Hysteresis PAM8019 Document number: DS38822 Rev. 1 - 2 - 5 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Typical Performance Characteristics THD+N vs. Output Power - Speaker 50 INFORMATION ADVANCED NEW PRODUCT 50 F=100Hz / 1KHz / 10KHz VDD=5v RL=8Ω+33mH THD+N≦10% Av=20dB AUX-0025 AES-17(20KHz) 20 10 5 2 1 F=100Hz / 1KHz / 10KHz VDD=5v RL=4Ω+33mH THD+N≦10% Av=20dB AUX-0025 AES-17(20KHz) 20 10 5 2 1 % % 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 0.01 1m 3 2m 5m 10m 20m 50m 100m W 200m 500m 1 2 5 W THD+N vs. Frequency - Speaker 10 10 Po=0.3W / 0.5W / 0.8W VDD=5v RL=8Ω Av=20dB AUX-0025 AES-17(20KHz) 5 2 Po=0.5W / 1W / 1.5W VDD=5v RL=4Ω Av=20dB AUX-0025 AES-17(20KHz) 5 2 1 1 % % 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.06 0.03 20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 Hz 1k 2k 5k 10k 20k Hz Crosstalk vs. Frequency - Speaker +0 T -5 -10 -15 -20 -25 -30 -35 -40 -45 d B T T T T T T T T T +0 T T T T T T T T T T T -5 VDD=5v Vo=1Vrms RL=8Ω Av=20dB AUX-0025 AES-17(20KHz) -10 -15 -20 -25 -30 -35 -40 -45 d B -50 -55 VDD=5v Vo=1Vrms RL=4Ω Av=20dB AUX-0025 AES-17(20KHz) -50 -55 -60 -60 -65 R-Channel to L-Channel -70 R-Channel to L-Channel -65 -70 -75 -75 -80 -80 -85 -85 -90 R-Channel to L-Channel -95 R-Channel to L-Channel -90 -95 -100 20 50 100 200 500 1k Hz 2k 5k 10k 20k -100 20 50 100 200 500 1k 2k 5k 10k 20k Hz PAM8019 Document number: DS38822 Rev. 1 - 2 6 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Typical Performance Characteristics (Cont.) PSRR vs. Frequency +0 +0 TT TT TT TTT TT TTT TT TT TT TT TTT TT TTT TT INFORMATION ADVANCED NEW PRODUCT -5 -10 -15 -20 -25 -30 -35 d B -40 -5 VDD=5v RL=8Ω Av=20dB VRR=200mVPP AUX-0025 AES-17(20KHz) -10 -15 -20 -25 -30 -35 d B -40 -45 -45 -50 -50 -55 -55 -60 -60 -65 -65 -70 -70 -75 -75 -80 20 50 100 200 500 1k 2k 5k 10k -80 20 20k T T T VDD=5v RL=4Ω Av=20dB VRR=200mVPP AUX-0025 AES-17(20KHz) 50 100 200 500 1k 2k 5k 10k 20k Hz Hz Output Noise vs. Frequency – Speaker +0 -10 -20 -30 -40 d B r -50 A -70 +0 VDD=2.8v ~ 5.5v RL=8Ω+2*33uH Av=20dB Input AC Ground AUX-0025 AES-17(20KHz) -10 -20 -30 -40 -60 VDD=2.8v / 3.3v / 3.6v / 4.2v / 5v / 5.5v -80 d B r -50 A -70 -60 VDD=2.8v / 3.3v / 3.6v / 4.2v / 5v / 5.5v -80 -90 -90 -100 -100 -110 -110 -120 20 VDD=2.8v ~ 5.5v RL=4Ω+2*33uH Av=20dB Input AC Ground AUX-0025 AES-17(20KHz) 50 100 200 500 1k 2k 5k 10k 20k -120 20 Hz PAM8019 Document number: DS38822 Rev. 1 - 2 50 100 200 500 1k 2k 5k 10k 20k Hz 7 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Typical Performance Characteristics (Cont.) INFORMATION ADVANCED NEW PRODUCT Table 1 DC Volume Control Step 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Power Amp DC Volume (V) Gain (dB) 0.000 to 0.201 20 0.202 to 0.275 19.6 0.276 to 0.347 19.2 0.348 to 0.419 18.8 0.420 to 0.491 18.4 0.492 to 0.563 18 0.564 to 0.633 17.6 0.634 to 0.701 17.1 0.702 to 0.771 16.6 0.772 to 0.849 16.1 0.850 to 0.929 15.6 0.930 to 1.005 15.1 1.006 to 1.079 14.6 1.080 to 1.153 14.2 1.154 to 1.225 13.7 1.226 to 1.297 13.3 1.298 to 1.371 12.9 1.372 to 1.443 12.5 1.444 to 1.517 12 1.518 to 1.589 11.6 1.590 to 1.661 11.2 1.662 to 1.733 10.8 1.734 to 1.807 10.5 1.808 to 1.879 10.1 1.880 to 1.951 9.7 1.952 to 2.025 9.3 2.026 to 2.097 8.9 2.098 to 2.169 8.6 2.170 to 2.243 8.2 2.244 to 2.315 7.8 2.316 to 2.389 7.5 2.390 to 2.461 7.1 PAM8019 Document number: DS38822 Rev. 1 - 2 Head Phone Amp Gain (dB) 3.51 3.22 2.94 2.66 2.39 2.12 1.85 1.46 1.07 0.69 0.32 -0.05 -0.41 -0.77 -1.12 -1.47 -1.82 -2.16 -2.5 -2.84 -3.18 -3.51 -3.84 -4.17 -4.5 -4.82 -5.16 -5.48 -5.8 -6.13 -6.45 -6.78 Step 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Power Amp DC Volume (V) Gain (dB) 2.462 to 2.533 6.7 2.534 to 2.605 6.4 2.606 to 2.678 6 2.679 to 2.751 5.7 2.752 to 2.823 5.3 2.824 to 2.897 4.9 2.898 to 2.969 4.6 2.970 to 3.043 4.2 3.044 to 3.114 3.8 3.115 to 3.186 3.5 3.187 to 3.259 3.1 3.260 to 3.332 2.7 3.333 to 3.403 2.3 3.404 to 3.476 2 3.477 to 3.551 1.6 3.552 to 3.621 1.2 3.622 to 3.695 0.8 3.696 to 3.767 0.4 3.768 to 3.839 0 3.840 to 3.909 -1 3.910 to 3.979 -2.1 3.980 to 4.045 -3 4.046 to 4.116 -5 4.117 to 4.195 -7 4.196 to 4.273 -9 4.274 to 4.347 -10.9 4.348 to 4.421 -17 4.422 to 4.493 -22.8 4.494 to 4.565 -29 4.566 to 4.637 -33.5 4.638 to 4.708 -39.5 4.709 to 5.000 -60 8 of 12 www.diodes.com Head Phone Amp Gain (dB) -7.11 -7.43 -7.76 -8.09 -8.42 -8.76 -9.09 -9.43 -9.77 -10.1 -10.46 -10.81 -11.16 -11.52 -11.88 -12.24 -12.62 -12.99 -13.38 -14.37 -15.42 -16.3 -18.23 -20.16 -22.08 -23.96 -30.01 -35.83 -41.98 -46.46 -52.58 -92.95 May 2016 © Diodes Incorporated PAM8019 Application Information Non Clip Power Limit (NCPL) Function INFORMATION ADVANCED NEW PRODUCT When output reaches the maximum power setting value, the NCLP circuits will decrease the gain to prevent the output waveform from clipping helping to prevent speaker damage and maximizing audio performance. The PL pin is used to set and control the NCPL function. Table 1: NCPL Setting Threshold vs. Output AGC Function Output Power VDD to VDDx0.45 or PL pin floating NCPL function disabled VDD x 0.45 to VDD x 0.27 PO=[[8(1/2 VDD -VPL)^2]/RI] x 0.95 VDD x 0.27 to GND PO =2.3W (Max. output power 4Ω) PO =1.2W (Max. output power 8Ω) Mute Operation The MUTE pin is an input for controlling the Class-D output state of the PAM8019. A logic low on this pin enables the outputs and logic high on this pin disables the outputs. This pin may be used to quickly disable or enable the outputs without a volume fade. Quiescent current is listed in the electrical characteristic table. The MUTE pin can be left floating due to the internal pull-down. Shutdown Operation In order to reduce power consumption while not in use, the PAM8019 contains shutdown circuit to turn off the amplifier’s bias circuit. The amplifier is turned off when logic low is placed on the SD pin. The SD pin can be left floating due to the internal pull-up. Under voltage Protection External under voltage detection can be used to shut down the PAM8019 before an input device can generate a pop. The shutdown threshold at the UVP pin is 1.2V. The user selects a resistor divider to obtain the shutdown threshold and hysteresis for the specific application. The threshold can be determined as below: With the condition: R3 >> R1//R2 VUVP = [1.2-(6µA x R3)] x (R1+R2)/ R2 Hysteresis = 5µA x R3 x (R1+R2)/ R2 Power Supply Decoupling The PAM8019 is a high performance CMOS audio-amplifier that requires adequate power supply decoupling to ensure the THD and PSRR are as low as possible. Power supply decoupling also prevents oscillation caused by long leads between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. A good LowEquivalent-Series-Resistance (ESR) ceramic-capacitor of typically 0.1µF is recommended to be placed as close as possible to the VDD pin to filter the higher frequency transients, spikes or digital hash on the line. Filtering lower-frequency noise signals a large capacitor of 10µF or greater should be placed near the audio amplifier. PAM8019 Document number: DS38822 Rev. 1 - 2 9 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Application Information (Cont.) Input Capacitor (CI) INFORMATION ADVANCED NEW PRODUCT It is desirable to use a large input capacitor but in applications where the speaker lacks the ability to reproduce signals below 100Hz to 150Hz it may be possible to minimize CI without effecting system performance. Input Capacitor (CI) and Input Resistance (RI) of the amplifier form a highpass filter with the corner frequency determined equation below: Fc = 1/ 2πRI x CI In addition to system cost and size, click and pop performance is affected by the size of the coupling capacitors. A larger in/out coupling capacitor requires more charge to reach its quiescent DC voltage (Normally 1/2 VDD). This charge comes from the internal circuit via the feedback and is more likely to create pops upon device enable. Minimizing the capacitor size based on necessary low frequency response can minimize the turn on pop. Bypass Capacitor (CBYP) Bypass Capacitor (CBYP) is the most critical capacitor and serves several important functions. During start-up or recovery from shutdown mode, CBYP determines the rate at which the amplifier starts up. The second function is to reduce noise produced by the power supply caused by coupling into the output signal. The noise is from the internal analog reference to the amplifier, which appears as degraded PSRR and THD+N. A ceramic bypass capacitor (CBYP) of 0.47µF to 1.0µF is recommended for the best THD and noise performance. Increasing the bypass capacitor reduces clicking and popping noise from power on/off and when entering and leaving shutdown. Ordering Information PAM8019 X X – X Product Name Package Pin Configuration K:QFN4x4 G: 20 Packing R : Tape & Reel Part Number Package Standard Package PAM8019KGR U-QFN4040-20 3000 / Tape and Reel Marking Information P8019 XXXYW PAM8019 Document number: DS38822 Rev. 1 - 2 Y: Year W: Week X: Internal Code 10 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 Package Outline Dimensions (All dimensions in mm.) Please see http://www.diodes.com/package-outlines.html for the latest version. U-QFN4040-20 INFORMATION ADVANCED NEW PRODUCT A1 A3 A Seating Plane U-QFN4040-20 Dim Min Max Typ A 0.55 0.65 0.60 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 3.95 4.05 4.00 D2 2.40 2.60 2.50 E 3.95 4.05 4.00 E2 2.40 2.60 2.50 e 0.50 BSC L 0.35 0.45 0.40 Z 0.875 All Dimensions in mm D (Pin #1 ID) e E2 E D2 L b Z (8x) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-QFN4040-20 X3 Dimensions X1 C X X1 X2 X3 Y Y1 Y2 Y3 Y1 Y2 Y3 X2 Y X 1 PAM8019 Document number: DS38822 Rev. 1 - 2 Value (in mm) 0.500 0.350 0.600 2.500 4.300 0.600 0.350 2.500 4.300 C 11 of 12 www.diodes.com May 2016 © Diodes Incorporated PAM8019 IMPORTANT NOTICE INFORMATION ADVANCED NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com PAM8019 Document number: DS38822 Rev. 1 - 2 12 of 12 www.diodes.com May 2016 © Diodes Incorporated