PAM8009 3W STEREO CLASS-D Audio Amplifier and Class AB Headphone Driver (DC VOLUME, UVP and AGC Function) Description Pin Assignments The PAM8009 is a 3W, Class D audio-power amplifier for driving external components and allows BTL (Speaker) volume control and SE (Headphone) volume control, the gain range is from +20dB (Volume=5V) to -60dB (Volume=0V) with 64 steps precise control. PAM8009 XXXYWWLL ADVANCED INFORMATION bridged-tied stereo speakers. Advanced DC volume control minimizes Integrated power-limit technology suppresses the output signal clip automatically due to the over level input signal. This technology also offers low THD+N and protects speaker. Integrated Undervoltage Protection (UVP) technology, external undervoltage detection can be used to shut down the PAM8009 before an input device can generate a pop. PAM8009 is available in SO-24 and U-QFN4040-20. Features • Operating Voltage: 2.8v ~ 5.5v • Filter – Free and Low EMI • Low Quiescent Current • IDD=7mA @ VDD= 5V • ROUTN 1 HP_ROUT 2 SD 3 BYPASS 4 RINN 5 64 Steps DC Volume Control from -80dB to +20dB by DC Voltage with Hysteresis • P8009 XXXYW 15 LOUTN 14 HP_LOUT 13 VDD 12 UVP 11 AGC Power Limit Function Disable: 0.45VDD ~ VDD Max. Power: GND • UVP Function • Output Power @ THD+N=1% Disable: Floating BTL Mode Applications VDD=5V, Rl=4Ω; Po=2.4W VDD=5V, Rl=8Ω; Po=1.4W SE Mode VDD=5V, Rl=32Ω; Po=60mW • Output Power @ THD+N = 10% • LCD Monitor / Projects • Projects / All-In-One Computers • Portable Speakers • Portable DVD Player / Game Machines BTL Mode VDD=5V, Rl=4Ω; Po=3.0W VDD=5V, Rl=8Ω; Po=1.7W • Input Signal and Headphone Output Signal in Phase • Thermal and Over-Current Protections with Auto-Recovery • Power Enhance Package SO-24 and U-QFN4040-20 • Lead Free and Green Devices Available (RoHS Compliant) • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green Device (Note 3) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimonyfree, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. PAM8009 Document number: DS37224 Rev. 1 - 2 1 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 ADVANCED INFORMATION Typical Applications Circuit Pin Descriptions SO-24 Package Name QFN-20 Name 1 3 /SD 2 4 Bypass 3 5 RIN 4, 5, 20, 21 6, 18 GND 6 7 LIN 7 8 VOLUME 8 9 MUTE 9 10 SE/ BTL 10 11 AGC 11 12 UVP 12, 18, 23 13,16,20 VDD 13 14 HP_LOUT 14, 16 - N.C Function Full Chip Shutdown Control Input (Active Low) Bias Voltage for Power Amplifier Negative Input of Right Channel Power Amplifier Ground Connection Negative Input of Left Channel Power Amplifier Internal Gain Setting Input Connect to VDD which Set Max. Gain = +20dB Mute Control Signal Input (Active High) Output Mode Control Input High for SE Mode and Low for BTL Mode VDD ~ 0.45 x VDD or Floating, Disable the Function Under Voltage Protection Input Floating or Pull High Disable the Function Power Headphone Output of Left Channel Power Amplifier No Connection Headphone Output of Right Channel Power Amplifier 15 2 HP_ROUT 17 15 LOUTN Negative Output of Left Channel Power Amplifier 19 17 LOUTP Positive Output of Left Channel Power Amplifier 22 19 ROUTP Positive Output of Right Channel Power Amplifier 24 1 ROUTN Negative Output of Left Channel Power Amplifier PAM8009 Document number: DS37224 Rev. 1 - 2 2 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 ADVANCED INFORMATION Functional Block Diagram Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4) Symbol VDD VDD TJ TSTG TSDR Notes: Parameter Supply Voltage Input Voltage Maximum Junction Temperature Storage Temperature Range Maximum Soldering Temperature Range, 5 Seconds Rating -0.3 to 6.0 -0.3 to VDD + 0.3 +150 - 65 to +150 +300 Unit V °C 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Max Unit VDD Supply Voltage Range 2.8 ~ 5.5 V SD, MUTE 2 ~ VDD V SE, BTL 0.8 x VDD ~ VDD V SD, MUTE 0 ~ 0.8 V SE, BTL 0 ~ 1.0 V V High Level Threshold Voltage VIH VIL Low Level Threshold Voltage VICM Common Mode Input Voltage 1 ~ VDD - 1 TA Ambient Operation Temperature Range -40 ~ + 85 TJ Junction Temperature Range -40 + 125 °C Thermal Information (@TA = +25°C, unless otherwise specified.) Symbol Parameter θJA Thermal Resistance – Junction to Ambient θJC Ambient Operation Temperature Range SO-24 QFN4040-20 PAM8009 Document number: DS37224 Rev. 1 - 2 SO-24 QFN4040-20 3 of 12 www.diodes.com Typical Value Unit +96 +45 °C/W +18 +7 °C/W January 2015 © Diodes Incorporated PAM8009 Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = Max., RL=8Ω, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Units 2.8 200 - 7 4 3 4 250 10 5.5 1 300 33 56 - V mA mA mA mA µA KHz KΩ KΩ mV - 0.26 - - 0.19 - - 0.28 - - 0.21 - - 0.29 - - 0.21 - 1.5 2.8 - 1.72 1.7 3.0 0.08 0.08 - - - 61 - dB 85 80 - -82 90 88 180 270 83 - dB ADVANCED INFORMATION BTL Mode VDD IQ IQ IMUTE IMUTE ISD FOSC Ri Ri VOS THD+N Total Harmonic Distortion Plus Noise VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=5V, No Load VMUTE=0, VSD=0V, No Load Gain=20dB Gain=3.5dB No load VDD=5.5V, Ids=0.8A P MOSFET VDD=5.5V, Ids=0.8A N MOSFET VDD=4.5V, Ids=0.6A P MOSFET VDD=4.5V, Ids=0.6A N MOSFET VDD=3.6V, Ids=0.4A P MOSFET VDD=3.6V, Ids=0.4A N MOSFET Bypass Capacitor, Cb=2.2uF THD+N=10%, f=1KHz, Rl=8Ω THD+N=10%, f=1KHz, Rl=4Ω Rl=8Ω, Po=0.8W, f=1KHz Rl=4Ω, Po=1.6W, f=1KHz PSRR Power Supply Ripple Rejection Input AC-GND, f=1KHz, Vpp=200mV CS Channel Separation η Efficiency VN Noise Po=1W, f=1KHz Po=1.7W, f=1KHz, Rl=8Ω Po=3W, f=1KHz, Rl=4Ω Input AC-GND, A-weighting Non A-weighting F=20 ~ 20KHz, THD=1% RDS(on) TSTART UP Po SNR Supply Voltage Range Quiescent Current (BTL) Quiescent Current (SE) Mute Current (BTL) Mute Current (SE) Shutdown Current Oscillator Frequency Input Resistance (BTL) Input Resistance (SE) Output Offset Voltage Drain – Source on-State Resistance Startup time from Shutdown Output Power Signal Noise Ratio Ω S W % % uV uV dB SE Mode Vos Po Output Offset Voltage Output Power Total Harmonic Distortion Plus Noise No load THD+N=1%, Rl=32Ω, f=1KHz - 2.5 60 - V mW Rl=32Ω, Po=50mW, f=1KHz - 0.02 - % Power Supply Ripple Rejection Input AC-GND,F=1KHz,Vpp=200mV - 75 - dB CS Channel Separation Vn Noise Po=1W, f=1KHz Input AC-GND, A-weighting Non A-weighting F=20 ~ 20KHz, THD=1% - -87 74 58 89 - dB uV uV dB THD+N PSRR SNR Signal Noise Ratio Control Section VIH VIL VMH VML OTP /SD Input High /SD Input Low Mute Input High Mute Input Low Over Temperature Protection - 1.4 1.4 - 150 0.6 0.6 - V V V V °C OTH Over Temperature Hysteresis - - 108 - °C PAM8009 Document number: DS37224 Rev. 1 - 2 4 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 Typical Performance Characteristics THD+N vs. Output Power ADVANCED INFORMATION 50 F=100Hz / 1KHz / 10KHz VDD=5v RL=4Ω+33uH THD+N≦10% Av=20dB AUX-0025 AES-17(20KHz) F=100Hz / 1KHz / 10KHz VDD=5v RL=8Ω+33uH THD+N≦10% Av=20dB AUX-0025 AES-17(20KHz) 20 10 5 2 % 1 0.5 0.2 0.1 0.04 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 W THD+N vs. Frequency 10 10 Po=0.3W / 0.5W / 0.8W VDD=5v RL=8Ω Av=20dB AUX-0025 AES-17(20KHz) 5 2 Po=0.5W / 1W / 1.5W VDD=5v RL=4Ω Av=20dB AUX-0025 AES-17(20KHz) 5 2 1 1 % % 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.06 0.03 20 50 100 200 500 1k 2k 5k 10k 20 20k 50 100 200 500 1k 2k 5k 10k 20k Hz Hz Crosstalk vs. Frequency +0 T -5 -10 -15 -20 -25 -30 -35 -40 -45 d B T T T T T T T T T +0 T T -5 VDD=5v Vo=1Vrms RL=8Ω Av=20dB AUX-0025 AES-17(20KHz) -15 -20 -25 -30 -35 -40 -45 d B -50 -55 T T T T T T T VDD=5v Vo=1Vrms RL=4Ω Av=20dB AUX-0025 AES-17(20KHz) -50 -55 -60 -60 R-Channel to L-Channel -65 -70 R-Channel to L-Channel -65 -70 -75 -75 -80 -80 -85 -85 R-Channel to L-Channel -90 -95 -100 20 T T -10 R-Channel to L-Channel -90 -95 50 100 200 500 1k Hz PAM8009 Document number: DS37224 Rev. 1 - 2 2k 5k 10k 20k -100 20 50 100 200 500 1k 2k 5k 10k 20k Hz 5 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 Typical Performance Characteristics (Cont.) ADVANCED INFORMATION PSRR vs. Frequency +0 +0 T T TT TT TT TTT T TT T TTT TT TT T T T T TT T TT T TT TTT T TT T TT TTT T T TT TT -5 -10 -15 -20 -25 -30 -35 d B -40 -5 VDD=5v RL=8Ω Av=20dB VRR=200mVPP AUX-0025 AES-17(20KHz) -10 -15 -20 -25 -30 -35 d B -40 -45 -45 -50 -50 -55 -55 -60 -60 -65 -65 -70 -70 T T T VDD=5v RL=4Ω Av=20dB VRR=200mVPP AUX-0025 AES-17(20KHz) -75 -75 -80 20 50 100 200 500 1k 2k 5k 10k -80 20 20k 50 100 200 500 1k 2k 5k 10k 20k Hz Hz Output Noise vs. Frequency +0 +0 -10 -20 -30 -40 d B r -50 A -70 VDD=2.8v ~ 5.5v RL=8Ω+2*33uH Av=20dB Input AC Ground AUX-0025 AES-17(20KHz) -10 -20 -30 -40 -60 VDD=2.8v / 3.3v / 3.6v / 4.2v / 5v / 5.5v -80 d B r -50 A -70 -60 VDD=2.8v / 3.3v / 3.6v / 4.2v / 5v / 5.5v -80 -90 -90 -100 -100 -110 -110 -120 20 VDD=2.8v ~ 5.5v RL=4Ω+2*33uH Av=20dB Input AC Ground AUX-0025 AES-17(20KHz) 50 100 200 500 1k 2k 5k 10k 20k -120 20 Hz PAM8009 Document number: DS37224 Rev. 1 - 2 50 100 200 500 1k 2k 5k 10k 20k Hz 6 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 Typical Performance Characteristics (Cont.) ADVANCED INFORMATION Table 1 DC Volume Control PAM8009 Document number: DS37224 Rev. 1 - 2 7 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 Application Information ADVANCED INFORMATION AGC Function When output reaches the maximum power-setting value, the Internal Programmable Gain Amplifier will decrease the gain to prevent the output waveform from clipping. This feature prevents speaker damage from occurring using the AGC pin to set the AGC function, limiting the output power. Table 1: AGC Setting Threshold vs. Output AGC Function Output Power VDD ~ 0.45VDD or AGC Floating AGC function Disable 0.45VDD ~ 0.27VDD Po=[[8(1/2VDD-VAGC)^2]/Rl] x 0.95 0.27VDD ~ GND Po=2.3W (Max. output power 4Ω) Po=1.2W (Max. output power 8Ω) Mute Operation The MUTE pin is an input for controlling the Class-D output state of the PAM8009. A logic low on this pin enables the outputs, and a logic high on this pin disables the outputs. This pin may be used to quickly disable or enable the outputs without a volume fade. Quiescent current is listed in the electrical characteristics table. The MUTE pin can be left floating due to the internal pull-down. Shutdown Operation In order to reduce power consumption while not in use, the PAM8009 contains shutdown circuit to turn off the amplifier’s bias circuit. The amplifier is turned off when logic low is placed on the /SD pin. When switching the /SD pin to low level, the amplifier enters a low-consumption current status. The /SD pin can be left floating due to the internal pull-up. Undervoltage Protection External undervoltage detection can be used to shut down the PAM8009 before an input device can generate a pop. The shutdown threshold at the UVP pin is 1.2V. The user selects a resistor divider to obtain the shutdown threshold and hysteresis for the specific application. The threshold can be determined as below: With the condition: R3 >> R1//R2 VUVP = [1.2-(6uA x R3)] x (R1+R2)/ R2 Hysteresis = 5uA x R3 x (R1+R2)/ R2 Power Supply Decoupling The PAM8009 is a high performance CMOS audio-amplifier that requires adequate power supply decoupling to ensure the outputs of THD and PSRR are as low as possible. Power supply decoupling also prevents oscillation caused by long lead between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good Low-Equivalent-Series-Resistance (ESR) ceramic-capacitor, typically 0.1uF is recommend, placing it as close as possible to the device’s VDD lead. For filtering lower-frequency noise signals, a large capacitor of 10uF or greater placed near the audio amplifier is recommended. PAM8009 Document number: DS37224 Rev. 1 - 2 8 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 Application Information (Cont.) ADVANCED INFORMATION Input Capacitor (Ci) Large input capacitors are both expensive and space hungry for portable designs. Clearly, a certain sized capacitor is needed to couple in low frequency without severe attenuation. But in many cases the speakers used in portable systems, whether internal or external, have little ability to reproduce signals below 100Hz to 150Hz. Thus, using a large-input-capacitor may not increase actual system performance. In this case, Input Capacitor (Ci) and Input Resistance (Ri) of the amplifier form a high-pass filter with the corner frequency determined equation below: Fc = 1/ 2πRi x Ci In addition to system cost and size, click and pop performance is affected by the size of the input coupling capacitor, Ci. A larger in/out coupling capacitor requires more charge to reach its quiescent DC voltage (Normally 1/2 VDD). This charge comes from the internal circuit via the feedback and is apt to create pops upon device enabling. Thus, by minimizing the capacitor size based on necessary low frequency response, turn on pop can be minimized. Bypass Capacitor (CBYP) Bypass Capacitor (CBYP) is the most critical capacitor and serves several important functions. During start-up or recovery from shutdown mode, CBYP determines the rate at which the amplifier starts up. The second function is to reduce noise produced by the power supply caused by coupling into the output signal. The noise is from the internal analog reference to the amplifier, which appears as degraded PSRR and THD+N. A ceramic bypass capacitor (CBYP) of 0.47uF to 1.0uF is recommended for the best THD and noise performance. Increasing the bypass capacitor reduces clicking and popping noise from power on/off and entering and leaving shutdown. Ordering Information PAM8009 Document number: DS37224 Rev. 1 - 2 9 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 PAM8009 XXXYWWLL ADVANCED INFORMATION Marking Information PAM8009 Document number: DS37224 Rev. 1 - 2 10 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 3 A A D ADVANCED INFORMATION SO-24 (Type TH) e n a l P g n i t a e S 2 A ' A ' L I A T E D 1 A h h c 5 2 . 0 SO-24 (Type TH) Dim Min Max Typ A 2.36 2.64 2.54 A1 0.10 0.30 0.20 A2 2.26 2.35 2.30 A3 0.97 1.07 1.02 b 0.39 0.48 c 0.25 0.31 D 15.20 15.60 15.40 e 1.27BSC E 10.10 10.50 10.30 E1 7.40 7.60 7.50 h 0.25 0.75 L 0.70 1.00 L1 1.40 BSC θ 0° 8° All Dimensions in mm 0 L ' A ' L I A T E D 1 1 L e b U-QFN4040-20 A1 A3 A Seating Plane U-QFN4040-20 Dim Min Max Typ A 0.55 0.65 0.60 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 3.95 4.05 4.00 D2 2.40 2.60 2.50 E 3.95 4.05 4.00 E2 2.40 2.60 2.50 e 0.50 BSC L 0.35 0.45 0.40 Z 0.875 All Dimensions in mm D (Pin #1 ID) e E2 E D2 L Z (8x) PAM8009 Document number: DS37224 Rev. 1 - 2 b 11 of 12 www.diodes.com January 2015 © Diodes Incorporated PAM8009 IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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