AN2703 Application note Parameter list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each datasheet, two classes of parameters are available: March 2008 ■ Absolute ratings, corresponding to critical parameters, not to be exceeded for safe operation. If the absolute rating is exceeded, the component may be damaged. ■ Electrical, thermal and static characteristics, defining limits on product characteristics. Rev. 2 1/9 www.st.com Parameters 1 AN2703 Parameters Table 1. Absolute ratings parameters Parameter VDRM / VRRM VRM Name and description Repetitive peak off-state voltage (50-60 Hz) This is the maximum peak voltage allowed across the device. This parameter is specified up to the maximum junction temperature and the leakage currents, IDRM / IRRM are specified under this value. VDSM / VRSM Non repetitive peak off-state voltage This is the maximum peak voltage allowed under pulse conditions across the device. It is specify for pulse durations lower or equal to 10ms.This parameter guarantees the ruggedness of the TRIAC in case of fast line transients exceeding the specified VDRM / VRRM value. IT(RMS) On-state rms current This is the maximum rms current allowed in the device for a specified case temperature (Tc), or ambient temperature (Ta) or lead temperature (Tl), depending on the type of package. IT(AV) Average on-state current (SCR only) This is the maximum average current allowed in the SCR at a specified case temperature (Tc), or ambient temperature (Tamb) or lead temperature (Tl), depending on the type of package ITRM Repetitive peak on-state current This is the maximum allowable repetitive peak current for a specified pulse duration at a specified case, ambient or lead temperature and frequency. ITSM Non repetitive surge peak on-state current This is the maximum peak current allowed in the device under pulse conditions. For TRIACs, it is defined for a single full cycle sine wave of 20 ms corresponding to the 50 Hz mains, and 16.6 ms for the 60 Hz mains. If the absolute rating is exceeded, the component may be damaged dI/dt Critical repetitive rate of rise of on-state current During turn-on, the maximum rate of rise of current should not exceed this maximum value. Above this limit, the SCR or TRIAC may be damaged I²t Value for fuse definition To protect the device, the I²t rating of the fuse used in series with it must be lower than this specified value. This parameter is linked to the ITSM parameter as described below: i²t = I2TSM ´ tp 2 with tp the duration of full-cycle sinewave. Tstg, Tj 2/9 Storage and operating junction temperatures The storage temperature range is the range in which the device can be stored (shipping, handling, storage...), without working. The operating junction temperature range is the range at which the junction can work without damage. AN2703 Parameters Table 1. Absolute ratings parameters (continued) Parameter Name and description IGM Peak gate current This is the maximum peak current allowed through gate and cathode, defined for a 20 µs pulse duration. If the absolute rating is exceeded, the component may be damaged. PG(AV) Average gate power dissipation This is the maximum average power that can be dissipated by the gate junction. If the absolute rating is exceeded, the component may be damaged. VRGM Peak reverse gate voltage This parameter is only defined for SCRs. It is the maximum reverse voltage than can be applied across gate and cathode terminals, without risk of destruction of the gate to cathode junction. VGM Peak positive gate voltage (with respect to the pin "COM") This parameter is only defined for ACSs. It is the maximum voltage than can be applied across gate and COM terminals without risk of destruction of the gate to COM junction. Table 2. Electrical characteristics parameters Parameter Name and description P Average power dissipation This is the average power dissipated by current conduction through the device for one full cycle operation. IGT Triggering gate current This is the current to apply between gate and cathode (or gate and electrode A1 for TRIAC) to turn-on the device. This parameter defines the sensitivity of the component. For a SCR, the gate current has always to be sunk by the gate. For a TRIAC, IGT is define for 3 or 4 quadrants corresponding to the different polarities of A2, A1 and gate: - Q1: Ig sunk by the gate, VA2-A1 > 0 - Q2: Ig sourced by the gate, VA2-A1 > 0 - Q3: Ig sourced by the gate, VA2-A1 < 0 - Q4: Ig sunk by the gate, VA2-A1 < 0 The IGT value is higher in Q4 quadrant. For ACS types, IGT is defined in two quadrants (Q2 and Q3). VGT Triggering gate voltage This is the voltage to apply across gate and cathode (or gate and electrode A1 for TRIAC) to reach the IGT current and then to trigger the device. VGD Non-triggering gate voltage VGD is the maximum voltage which can be applied across gate and cathode (or gate and electrode A1 for TRIAC) without causing undesired turn-on. This parameter is specified, for the worst case scenario, at the maximum junction temperature. 3/9 Parameters AN2703 Table 2. Electrical characteristics parameters (continued) Parameter 4/9 Name and description IH Holding current This is the current level circulating through anode and cathode (or A2 and A1 for a TRIAC) under which the device turns off, without gate current. IL Latching current This is the current level circulating through anode and cathode (or A2 and A1 for a TRIAC) to keep the device conducting after removal of the gate current. If the anode current is under this value after having removed the gate current, the device switches off. For TRIACs, the IL value is higher in Q2 quadrant. dV/dt Critical rate of rise of off-state voltage This is the maximum value of rate of the rising voltage that can be applied across anode and cathode of the SCR (or across A2 and A1 for a TRIAC) without risking turning it on spuriously. (dI/dt)c Critical rate of decrease of commutating on-state current This is the maximum rate of decrease of the anode current allowed to turn the TRIAC off. Above this value, the TRIAC can remains ON in next reverse polarity. For standard, logic level TRIACs and ACSs, the (dI/dt)c is specified with a limited (dV/dt)c parameter. For Snubberless TRIACs, this value is specified without it. (dV/dt)c Critical rate of rise of commutating off-state voltage This is the maximum rate of rise of the reapplied voltage during turn-off. Above this limit, the TRIAC may remain ON without any gate current. VCL Clamping voltage This is the voltage level, applied across OUT and COM terminals, from which the device enters in avalanche mode. It is only defined for ACS and ACST devices which internally feature an overvoltage protection capability. VBO Breakover voltage This is the voltage measured across the terminals of a DIAC or across OUT and COM terminals of an ACS/ACST, when the device current reaches its IBO level (no gate current). Above this point, the device will turn on in breakover mode. IBO Breakover current This is current flowing through a DIAC or an ACS just before that the device switches on in the breakover mode. VTM Peak on-state voltage drop This is the voltage across the device while it is on-state. It is specified at the peak current corresponding to the IT(RMS) current of the device. VF Peak forward voltage drop This is the voltage across a diode when the diode is conducting. AN2703 Parameters Table 2. Electrical characteristics parameters (continued) Parameter Vto / Rd Name and description Threshold voltage Dynamic on-state resistance These two parameters are used to calculate the instantaneous voltage drop according to the relation VT = Vto + Rd x IT. They are also useful to calculate the power dissipation of the device: For SCR: P = Vt 0 ´ IT( AV ) + R d ´ I2T(RMS) For TRIACs: P= IDRM / IRRM IRM or IR 2 2 Vt 0 ´ IT (RMS ) + R d ´ I2T (RMS ) p Maximum forward and reverse leakage current (SCRs, TRIACs and ACS) Maximum leakage current for diodes This is the current flowing through the device when it is in the OFF state, at the specified VDRM or VRRM value for TRIACs or SCRs, or VR for diodes or DIACs. Please refer to Appendix A: Testing method for parameters. tgt Turn-on time This is the time between the beginning of the gate current pulse (10% of its peak value) and when the A-K voltage of the SCR or A2-A1 voltage of the TRIAC has fallen down to 10% of its previous stand-off value. tq Turn-off time This parameter is specific to SCRs. After this time, a positive voltage rate can be applied across Anode and Cathode without causing any spurious firing. This parameter defines the maximum operating frequency of the SCR. td Delay time This is the time between the beginning of the gate current pulse (10% of its peak value) and the beginning of the decrease of the A2-A1 or A-K voltage (90% of its peak value). tρ Rise time For a DIAC, this is the time between 10% and 90% of the peak current generated when the component discharge a specified capacitor into a specified load. VBR Breakdown voltage This is the voltage across the device, at off-state, measured at a specified current level. This parameter is specific for some ASDTM and protection devices. αT Temperature coefficient This is the positive temperature coefficient of the breakover voltage. This parameter is generally specified in percentage, for specific devices. VO Output voltage For a DIAC, this is the peak voltage across a 20 Ω resistor in series with the device during the discharge of a specified capacitor. 5/9 Parameters AN2703 Table 2. Electrical characteristics parameters (continued) Parameter ΔV Dynamic breakover voltage For a DIAC, this is the dynamic variation of its voltage at triggering. It is the difference between VBO and the voltage for a 10mA current. Δ V = VBO - VDIAC(10mA) DIACs feature a negative-resistance triggered characteristic. RTH(j-a) Junction to ambient thermal resistance This is the thermal resistance between junction and ambient, when the device is used without heatsink. For SMD packages, the copper surface under the tab is specified. RTH(j-c) Junction to case thermal resistance This is the thermal resistance between junction to case. For TRIACs and SCRs, this value is respectively specified for AC and DC operations. RTH(j-l) Junction to lead thermal resistance This is the thermal resistance between junction and leads. It is given for small packages like TO92, with no other metallic case temperature reference. ZTH(j-c) ZTHj-a) 6/9 Name and description Transient thermal impedance This is the value of the thermal resistance when the steady state of the device is not reached. Curves provided in the datasheets, ZTH(j-c) and ZTH(j-a), show the relative value of this impedance according the to the time duration of dissipated power pulse. AN2703 Testing method for parameters Appendix A Testing method for parameters The testing method for IDRM / IRRM parameters is: ● Apply the specified VDRM or VRRM voltage across anode and cathode (or A2 and A1 terminals for TRIACs, or OUT and COM terminals for AC Switches) ● Measure the leakage current peak value: it must be less than the maximum specification value (IDRM / IRRM max.). It is forbidden to use a current supply and apply the IDRM / IRRM max. through anode and cathode, and then measure the voltage. In this case, the TRIAC or the SCR goes into breakdown voltage and may be damaged. Note: A voltage higher than the VDRM / VRRM rated values may be applied for less than 10 ms if it does not exceed the VDSM / VRSM parameters specified in the device datasheet. Figure 1. Relationship between applied and measured values 7/9 Revision history 2 AN2703 Revision history Table 3. 8/9 Document revision history Date Revision Changes Aug-2005 1 Initial release. 28-Jan-2008 2 Reformatted to current standards AN2703 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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