SMP75-8 TRISILTM FEATURES Bidirectional surge arrestor. Very low stand-off voltage : VRM = 8 V. High repetitive surge capability : IPP = 75 A (10/1000µs). Very low capacitance : C < 75 pF Low leakage current : < 2 µA DESCRIPTION The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients. SMB (JEDEC DO-214AA) SCHEMATIC DIAGRAM MAIN APPLICATION XDSL TRANSMISSION EQUIPMENT BENEFITS Protection against high energy surges. Very low breakover voltage : VBO < 15 V, thus avoiding saturationof transformer. No signal distortion thanks to very low capacitance. COMPLIESWITHTHE FOLLOWINGSTANDARDS : - BELLCORE TR-NWT -000974: - CCITT K20: - VDE 0433: - VDE 0878: 10/1000 µs 10/1000 µs 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs 1 kV 75A * 4 kV 100A 4 kV 100A 4 kV 100A * with series resistor or PTC. January 1998 - Ed : 2 1/6 SMP75-8 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Ipp Parameter Value Unit 10/1000µs 8/20µs 75 250 A A Non repetitive surge peak on-state current One cycle 50Hz 60Hz 35 37 A A Non repetitive surge peak on-state current F = 50Hz 0.2s 2s 14 6 A A 260 °C - 55 to + 150 150 °C °C Value Unit Peak pulse current ITSM Maximum lead temperature for soldering during 10s TI Tstg Tj Storage temperature range Maximum junction temperature THERMAL RESISTANCES Symbol Parameter Rth(j-I) Junction to leads 20 °C/W Rth(j-a) Junction to ambient on printed circuit (with standard footprint dimensions) 100 °C/W Note 1: Pulse waveform 10 / 1000 µs 8 / 20 µs 5 / 310 µs 1 / 20 µs 2 / 10 µs % IPP tr = 10 µs tr = 8 µs tr = 5 µs tr = 1 µs tr = 2 µs tp = 1000 µs tp = 20 µs tp = 310 µs tp = 20 µs tp = 10 µs ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage IRM VR Leakage current at stand-off voltage VBR Breakdown voltage VBO IH Breakover voltage Holding current IBO Breakover current IPP C Peak pulse current Capacitance Continuous Reverse voltage 2/6 100 50 0 tr tp SMP75-8 STATIC PARAMETERS Type IR @ VR max. note 1 IRM @ VRM max. SMP75-8 VBO @ IBO max. note 2 IH typ. note 3 C max. note 4 µA V µA V V mA mA pF 2 6 50 8 15 800 50 75 Type Max. Unit SMP75-8 20 V Note 1 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. In any case VBOmin ≥ VBR Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz. DYNAMIC PARAMETERS Symbol Test conditions (see note 5) Test conditions 1 VRISE = 100 V/µs, di/dt < 10 A/µs, IPP = 75 A VBO Test conditions 2 VRISE = 1 kV/µs, di/dt < 10 A/µs, IPP = 10 A Note 5 : VBO parameters are given by a KeyTek ’System 2’ generator with PN246I module. See test circuits (3) for VBO dynamic parameters. TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. 3/6 SMP75-8 FUNCTIONAL HOLDING CURRENT (IH ) TEST CIRCUIT 2: GO-NO GO TEST R - VP D.U.T. VBAT = - 6 V Surge generator This is a GO-NO GO test which allows to confirm the holdingcurrent (IH) level in a functionaltest circuit. TEST PROCEDURE : - Adjust the current level at the I H value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the OFF-state within a duration of 50 ms max. TEST CIRCUITS 3 FOR VBO DYNAMIC PARAMETERS 100 V / µs,Ipp = 75A 2Ω U 83 Ω 45 Ω 10 µF 66 Ω 0.36 nF 470 Ω KeyTek ’System 2’ generator with PN246I module 1 kV / µs,Ipp = 10 A 26 µH U 60 µF 250 Ω 47 Ω 12 Ω KeyTek ’System 2’ generator with PN246I module 4/6 46 µH 46 µH SMP75-8 TYPICAL APPLICATION : T1 / E1 protection DA108S1 +Vcc 5V RTIP RX LINE +Vcc 0V RRING SMP75-8 IC +Vcc SM6T6V8A TTIP +Vcc TX LINE TRING SMP75-8 The above schematic shows a T1 / E1 application circuit. This type of line protection may be used in premises equipment or telephone company equipment on ports directly connected to metallic plant lines. During the lightning surge, the low voltage Trisil SMP75-8 provides an efficient crowbar protection on the primary side of the transformer. The SMP75-8 has a maximum peak pulse current of 75A (10/1000µs pulse) and a maximum breakover voltage of 15V. This low voltage prevents the transformer to be satured when a surge occurs on the line. Additionally, the low capacitance (65pF) is required to avoid significant signal degradation in the case of high speed digital pulses. additional voltage protection is recommended on the line input / output pins of the IC. The diode array DA108S1 connected between +Vcc and GND is then used to limit the remaining overvoltage within a safe level. The DA108S1 is especially dedicated to this application because. Its fast response time and low forward voltage drop enable it to clamp any surge before the IC line interface internal protection fails. Additionally, the low capacitance (30pF) is required to prevent signal degradation of the high speed datd. The DA108S1 is a fully integrated (1 chip) device and results from the ST ASDTM(Application Specific Discretes) technology. ASDsTM combine the functions of several components into a single monolithic device that is tailored to meet the exact requirement of a specific application, allowing higher density and improved reliability. To protect the IC line interface from the remaining energy which is coupled through the transformer, ORDER CODE SMP 75 - 8 SURFACE MOUNT VOLTAGE TRISIL 75 A 5/6 SMP75-8 Non repetitive surge peak current versus overload duration. MARKING Package ITSM (A) Type Marking 50 SMB F=50Hz Tj initial=25°C 45 SMP75-8 L08 40 35 30 25 20 15 10 5 0 1E-2 t(s) 1E-1 1E+0 1E+1 1E+2 1E+3 PACKAGE MECHANICAL DATA SMB (JEDEC DO-214AA)(Plastic) DIMENSIONS E1 REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A1 A2 b D c E A1 c A2 L b 1.90 2.15 2.45 0.075 0.085 0.096 0.05 0.15 0.20 0.002 0.006 0.008 1.95 2.20 0.077 0.087 0.15 0.41 0.006 0.016 E E1 5.10 5.40 5.60 0.201 0.213 0.220 4.05 4.30 4.60 0.159 0.169 0.181 D 3.30 3.60 3.95 0.130 0.142 0.156 L 0.75 1.15 1.60 0.030 0.045 0.063 FOOT PRINT (in millimeters) Packaging : tape and reel Weight : 0.12g 2.3 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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