Single P-channel MOSFET ELM23401CA-S ■General description ■Features ELM23401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-30V Id=-4.0A Rds(on) = 65mΩ (Vgs=-10V) Rds(on) = 75mΩ (Vgs=-4.5V) Rds(on) = 100mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range http://www.elm-tech.com Vds Vgs -30 ±12 V V Id -4.0 -3.2 A Idm -27 A 3 Pd 1.2 0.8 W 2 Tj, Tstg -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. 100 Max. 125 Unit °C/W ■Circuit SOT-23(TOP VIEW) 3 1 2 Note 1 D Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S Rev.1.0 3-1 Single P-channel MOSFET ELM23401CA-S http://www.elm-tech.com ■Electrical characteristics Parameter Symbol Condition Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance BVdss Vgs=0V, Id=-250μA Vds=-30V, Vgs=0V Idss Vds=-24V, Vgs=0V, Ta=125°C Igss Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=-250μA -30 V -1 -10 -0.7 ±100 -0.9 Vgs=-10V, Id=-4A 55 65 Rds(on) Vgs=-4.5V, Id=-3A Vgs=-2.5V, Id=-2A 65 85 75 100 15 nA V mΩ Gfs Vsd Is Pulsed body-diode current DYNAMIC PARAMETERS Ism Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Vgs=0V, Vds=-15V, f=1MHz Crss 830 60 50 pF pF pF Qg Qgs 17.0 1.5 nC nC 4 4 Vgs=Vds=0V, Force Current Vgs=-4.5V, Vds=-15V Id=-4A -1 -2 S V A -16.4 A 4 Forward transconductance Diode forward voltage Max. body-diode continuous current Gate-source charge Vds=-10V, Id=-5A Is=-1A, Vgs=0V -0.4 μA 4 Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=-10V, Vds=-15V 0.9 5.4 19.4 nC ns ns 4 4 4 Turn-off delay time td(off) Id=-1A, Rgen=6Ω tf 45.9 12.4 ns ns 4 4 Turn-off fall time NOTE : 1. The value of Rθja is measured with the device on 625mm² 70μ 2 layer copper 1.6t FR4 PCB in a still air environment with Ta=25°C. 2. The power dissipation Pd is based on Tj(max)=150°C, using ≤ 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by temperature Tj(max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Ta=25°C. 4. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. Rev.1.0 3-2 Single P-channel MOSFET ELM23401CA-S PM3211NS ■Typical30V electrical and thermal characteristics P-Channel MOSFETs Normalized On Resistance (m) -ID , Continuous Drain Current (A) http://www.elm-tech.com TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Powermate Electronics Corp. Ver.1.00 3-3 3 Rev.1.0