SMD ESD Protection Diode CPDA10R5V0P-HF RoHS Device Halogen Free Features - IEC61000-4-2 (ESD)±14kV(Contact),±15kV(Air). DFN10P - Working voltage: 5.0 V 0.100(2.55) 0.096(2.45) - Low leakage current. - Low capacitance: 0.25 pF typical (I/O to GND) 0.041(1.05) 0.037(0.95) Mechanical data - Case: DFN10p package,molded plastic. 0.014(0.35) Typ. - Terminals: Gold plated, solderable per MIL-STD-750,method 2026. - Mounting position: Any Circuit Diagram 0.008(0.20) Typ. I/O Pin 1 I/O Pin 2 I/O Pin 4 I/O Pin 5 0.022(0.55) 0.018(0.45) 0.016(0.40) Typ. 0.014(0.35) Typ. GND Pin 3 Dimensions in inches and (millimeters) Package N/C N/C 10 9 8 N/C N/C 7 6 4 5 I/O I/O GND 1 2 I/O I/O 3 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-G7081 Comchip Technology CO., LTD. SMD ESD Protection Diode Maximum Rating (at TA=25 °C unless otherwise noted) Symbol Value Unit Peak pulse power ( tp = 8/20 us) PPP 60 W Peak pulse current ( tp = 8/20 us) IPP 3 A ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) ESD ±15 ±14 kV TJ -55 to +125 °C TSTG -55 to +150 °C Parameter Operating temperature range Storage temperature range Electrical Characteristics (at TA=25 °C unless otherwise noted) Parameter Conditions Reverse stand-off voltage Symbol Min Typ VRWM Max Unit 5 V Breakdown voltage IR = 1mA VBR Leakage current VR = 5.0V IL IPP = ±1 A, Tp=8/20us, Any Channel Pin to Ground VC 11 V IPP = ±2 A, Tp=8/20us, Any Channel Pin to Ground VC 13 V VR = 0 V, f = 1MHz Any Channel Pin to Ground Cj 0.25 pF 6.0 V 50 nA Clamping voltage Junction capacitance Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-G7081 Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDA10R5V0P-HF) Fig.1 - 8/20us Peak Pulse Current Waveform ACC. IEC 61000-4-5 Peak Valur Ipp Percentage of Ipp 100% 0.60 Test Waveform parameters tf=8us td=20us Ta=25°C Capacitance Between Terminals, (pF) 120% e-t 80% 60% 40% Fig.2 - Typical Capacitance Between Terminals Characteristics td= t Ipp/2 20% 0% 5 0 10 15 20 25 f=1MHz TA=25°C 0.50 0.40 0.30 0.20 0.10 0.00 0 30 1 2 3 4 5 Time, (us) Fig.3 - Typical Clamping Voltage Vs. Peak Pulse Current Fig.4 - Power Rating Derating Curve 30 120 25 100 Power Rating, (%) Clamping Voltage, (V) Mounting on glass epoxy PCBs 20 15 10 Waveform Parameters: tr=8us td=20us 5 0 1 1.5 2.0 2.5 80 60 40 20 0 3.0 0 25 50 75 100 125 150 Ambient Temperature, ( °C ) Peak Pulse Current, (A) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-G7081 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification d P0 P1 T E Index hole .E5P F W B C P A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 160mm (min) Start 400mm (min) Direction of Feed DFN10P DFN10P SYMBOL A B C d D D1 D2 (mm) 1.14 ± 0.05 2.64 ± 0.05 0.64 ± 0.05 1.50 + 0.10 - 0 178.00 ± 1.00 60.00 + 0.50 - 0 13.00 ± 0.20 (inch) 0.045 ± 0.002 0.104 ± 0.002 0.025 ± 0.002 0.059 + 0.004 - 0 7.008 ± 0.039 2.362 + 0.020 - 0 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.20 ± 0.05 8.00 ± 0.30 12.00 ± 0.15 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.008 ± 0.002 0.315 ± 0.012 0.472 ± 0.006 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-G7081 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Part Number Marking Code CPDA10R5V0P-HF .E5P .E5P Suggested PAD Layout DFN10P SIZE (mm) (inch) A 2.30 0.091 B 1.00 0.039 C 0.38 0.015 D 0.30 0.012 E 0.30 0.012 F 0.50 0.020 G 0.24 0.009 A B G C D E F Standard Packaging Case Type DFN10P Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 QW-G7081 Comchip Technology CO., LTD.