Low Capacitance SMD ESD Protection Diode CPDT6-5V0USP-HF RoHs Device Halogen Free SOT-23-6 Features 0.119(3.02) 0.111(2.82) - Uni-directional ESD protection of four lines. 0.067(1.70) 0.059(1.50) - IEC61000-4-2 Level 4 ESD protection. 0.037(0.95) BSC. - JESD22-A114-B ESD Rating of class 3B per human body model. 0.079(2.00) 0.071(1.80) - Low reverse stand-off voltage: 5V 0.008(0.20) 0.004(0.10) 0.045(1.15) 0.041(1.05) - Low reverse clamping voltage. 0.116(2.95) 0.104(2.65) - Low leakage current. - Fast response time. 0.024(0.60) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) Mechanical data Dimensions in inches and (millimeter) - Case: SOT-23-6 standard package molded plastic. Pin Configuration - Terminals: Solder plated, solderable per MIL-STD-750,method 2026. I/O6 VCC I/O4 6 5 4 1 2 3 I/O1 GND I/O3 - Mounting position: Any - Weight: 0.015 grams(approx.). Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Parameter Value Unit (2) 125 W (2) 5 A Peak pulse power PPP Peak pulse current IPP IEC 61000-4-2 voltage (I/O to GND & VCC to GND) Air model ±25 ±25 Contact model (1) JESD22-A114-B ESD voltage (I/O to GND & VCC to GND) ESD voltage (I/O to GND & VCC to GND) kV VESD Per Human Body model ±16 Machine Model ±0.4 Lead soldering temperature - Maximim(10 second duration) TL 260 °C Junction temperature range Tj -55 to +150 °C Storage temperature range TSTG -55 to +150 °C Notes: 1. Device stressed with ten non-repetitive ESD pulses, Per channel (I/O to GND). 2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 1 QW-JP050 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Unit 5 V 6.5 8.8 V 5.8 8.1 V 1 µA 1.0 V (1) Reverse stand-Off voltage VRWM IT = 1mA Brekdown voltage Typ Max Min V(BR) IT = 1mA VCC to GND Reverse leakage current VRWM = 5 V (I/O to GND & VCC to GND) IR Forward voltage IF = 10 mA (I/O to GND & VCC to GND) VF IPP = 1 A (I/O to GND & VCC to GND) Clamping voltage IPP = 5 A (I/O to GND & VCC to GND) 0.5 15 (2) VC 25 VR = 0V, f =1MHz Junction capacitance V 0.8 pF Cj VR = 0V, f =1MHz, I/O to I/O 0.4 Notes: 1. Other voltages available upon request. 2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 2 QW-JP050 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDT6-5V0USP-HF) Fig.1 - 8/20us Peak Pulse Current Wave Form Acc. IEC 61000-4-5 120% Percentage of Ipp 100% Peak Valur Ipp e-t 80% 60% 40% 240 Test Waveform parameters tf=8us td=20us Mounted on glass epoxy PCBs 200 Power Dissipation, PD (W) Ta=25°C Fig.2 - Power Derating Curve td= t Ipp/2 160 120 80 40 20% 0 0% 0 5 10 15 20 25 0 30 25 75 50 100 125 150 Ambient Temperature, TA (°C) Time, (us) Fig.4 - Clamping Voltage Vs. Peak Pulse Current Fig.3 - Capacitance Characteristics 30 I/O Pin to Ground Ta=25°C f=1MHZ Ta=25°C tp=8/20us I/O Pin to I/O Pin Clamping Voltage, VC (V) Capacitance Between Terminals, CT (pF) 2.5 2.0 1.5 1.0 0.5 25 20 I/O Pin to Ground 15 VCC to Ground 10 5 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Peak Pulse Current, IPP (A) Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 3 QW-JP050 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode Reel Taping Specification P1 d T W B F E P0 C A P 12 o 0 D2 D1 D W1 SOT-23-6 SOT-23-6 SYMBOL A B C d D D1 D2 (mm) 3.17 ± 0.10 3.23 ± 0.10 1.37 ± 0.10 1.50 ± 0.05 180.0 + 0.00 /–0.30 60.00 ± 0.50 13.00 ± 0.20 (inch) 0.125 ± 0.004 0.127 ± 0.004 0.054 ± 0.004 0.059 ± 0.002 7.087 + 0.00 /–0.012 2.362 ± 0.020 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 + 0.30 /–0.10 12.30 ± 0.20 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 + 0.012 /–0.004 0.484 ± 0.008 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 4 QW-JP050 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode Marking Code 6 Part Number Marking Code CPDT6-5V0USP-HF U5H4 5 4 U5H4 1 2 3 U5H4 = Product type marking code ● = Pin 1 indicator Suggested PAD Layout C SOT-23-6 SIZE (mm) (inch) A A 1.00 0.039 B 0.70 0.028 C 0.95 0.037 D 2.40 0.094 E 3.40 0.134 D E B Standard Packaging REEL PACK Case Type SOT-23-6 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A Page 5 QW-JP050 Comchip Technology CO., LTD.