SMD ESD Protection Diode CPDVR105V0U-HF RoHS Device Halogen Free Features - IEC 61000-4-2 (ESD): Contact ±12KV - IEC61000-4-4 (FET): 40A-5/50ns DFN2510-10 0.102(2.60) 0.094(2.40) - Low clamping voltage - Low capacitance: 0.8pF max.(Any I/O to GND.) 0.043(1.10) 0.035(0.90) Mechanical data - Case: DFN2510-10 small outline plastic package - Terminals: Matte tin plated, solderable per MIL-STD-750, method 2026. - Mounting Compound Flammability Rating: UL 94V-0 - High temperature soldering guaranteed: 260°C/10 second - Weight: 0.015 grams(approx.). 0.023(0.58) 0.016(0.40) 0.020(0.50)BSC 0.002(0.05) MAX. 0.018(0.45) 0.014(0.35) Circuit Diagram 1 2 3 4 5 0.010(0.25) 0.006(0.15) 10 9 8 7 6 Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Value Unit 100 W Peak pulse power TP = 8/20us PPP Peak pulse current TP = 8/20us IPP 5 A ESD capability IEC 61000-4-2(air) IEC 61000-4-2(contact) ESD ±12 ±12 kV Tj -55~+125 °C TSTG -55~+150 °C Operation temperature range Storage temperature range Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Working peak reverse voltage Any I/O Pin to GND Breakdown voltage IT = 1mA, Any I/O Pin to GND Reverse leakage current VRWM = 5V, Any I/O Pin to GND Forward voltage Clamping voltage Junction capacitance Symbol Min Typ Max Unit 5.0 V 9.6 V IR 0.9 uA IF = 15mA, GND to any I/O Pin VF 1.15 V IPP = 1A, TP = 8/20us IPP = 5A, TP = 8/20us VC 12 20 V VR = 0V, f = 1MHz (I/O pin to I/O pin) CJ 0.4 pF VR = 0V, f = 1MHz (I/O pin to GND pin) CJ 0.8 pF VRWM VBR 6.1 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP057 Page 1 Comchip Technology CO., LTD. SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDVR105V0U-HF) Fig.1 - 8/20us Peak Pulse Current Wave Form Acc. IEC 61000-4-5 120% Percentage of Ipp 100% 120 Test Waveform parameters tf=8us td=20us Peak Valur Ipp Mounting on glass epoxy PCBs 100 Power Rating (%) Ta=25°C Fig.2 - Power Rating Derating Curve e-t 80% 60% 40% td= t Ipp/2 80 60 40 20 20% 0 0% 0 5 10 15 20 25 0 30 25 50 75 100 125 150 Ambient Temperature, ( °C ) Time, (us) Fig.4 - Clamping Voltage Vs. Peak Pulse Current Fig.3 - Forward Characteristic 100 20 TA=150°C Clamping Voltage, (V) Forward Current, IF (mA) 8/20us waveform TA=125°C 10 TA=100°C TA=75°C TA=50°C TA=25°C 1 16 12 8 4 0 0 0.4 0.6 1.0 0.8 1.2 1 2 3 4 5 Peak Pulse Current, (A) Forward Voltage, VF ( V ) Capacitance Between Terminals, CJ (pF) Fig.5 - Typical Capacitance Between Terminals Characteristics 8 I/O to GND I/O to I/O 6 4 2 0 0 1 2 3 4 5 Reverse Voltage, VR (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP057 Page 2 Comchip Technology CO., LTD. Reverse voltage, (%) SMD ESD Protection Diode Reel Taping Specification P1 d T F E P0 B W C A P 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 160mm (min) Start 400mm (min) Direction of Feed DFN2510-10 DFN2510-10 SYMBOL A B C d D D1 D2 (mm) 1.20 ± 0.05 2.70 ± 0.05 0.70 ± 0.05 1.50 ± 0.10 180.00 + 0.00 - 3.00 60.00 ± 0.50 13.00 ± 0.20 (inch) 0.047 ± 0.002 0.106 ± 0.002 0.028 ± 0.002 0.059 ± 0.004 7.087 + 0.000 - 0.118 2.362 ± 0.020 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.200 ± 0.03 8.00 ± 0.10 13.10 ± 1.30 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.008 ± 0.002 0.315 ± 0.004 0.516 ± 0.051 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP057 Page 3 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Part Number Marking Code CPDVR105V0U-HF . 0524X • 0524X Suggested PAD Layout D DFN2510-10 SIZE (mm) (inch) A 0.80 0.031 B 0.20 0.008 C 0.50 0.020 D 1.00 0.039 E 0.20 0.008 F 0.40 0.016 G 0.60 0.024 H 1.40 0.055 C + H A + + + + + G + B + + E F Standard Packaging Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Case Type DFN2510-10 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP057 Page 4 Comchip Technology CO., LTD.