CDBFR0230L-HF

SMD Schottky Barrier Diode
CDBFR0230L-HF
I o = 200 mA
V R = 30 Volts
RoHS Device
Halogen Free
1005/SOD-323F
Features
0.102(2.60)
0.095(2.40)
-Low forward voltage.
-Designed for mounting on small surface.
0.051(1.30)
0.043(1.10)
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
0.035(0.90)
0.027(0.70)
-Case: 1005/SOD-323F standard package,
molded plastic.
0.020(0.50) Typ.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BA
0.040(1.00) Typ.
-Mounting position: Any
-Weight: 0.006 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
V RRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
200
mA
I FSM
1
A
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Storage temperature
T STG
Junction temperature
Tj
-40
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 200 mA
VF
0.5
V
Reverse current
V R = 10 V
IR
30
uA
REV:A
Page 1
QW-G1050
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBFR0230L-HF)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
Reverse current ( A )
C
C
O
-25
O
C
25
1
O
12
5
O
C
10
75
Forward current (mA )
O
100
75 C
100u
10u
O
25 C
1u
100n
O
-25 C
0
10n
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
5
0
10
15
20
25
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
f = 1 MHz
Ta = 25 C
10
100
80
60
40
20
0
1
0
5
10
15
20
25
0
30
25
50
75
100
125
Fig. 5 - VF Dispersion map
Fig. 6 - IR Dispersion map
450
Fig. 7 - CT Dispersion map
50
30
O
O
420
410
400
AVG:421.28mV
Reverse current (uA)
430
O
45
Ta=25 C
VR=10V
n=30pcs
40
35
30
25
20
15
10
AVG:4.1816uA
Ta=25 C
F=1MHz
VR=0V
n=10pcs
29
Capacitance between
terminals(pF)
Ta=25 C
IF=200mA
n=30pcs
440
150
O
Ambient temperature ( C)
Reverse voltage (V)
Forward voltage (mV)
30
100
Average forward current(%)
Capacitance between terminals ( P F)
0
28
27
26
25
24
23
22
5
21
0
20
AVG:22.8pF
REV:A
Page 2
QW-G1050
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
1005
(SOD-323F)
1005
(SOD-323F)
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.55 ± 0.10
2.65 ± 0.10
1.05 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.061 ± 0.004
0.104 ± 0.004
0.041 ± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 3
QW-G1050
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Park Number
Marking Code
CDBFR0230L-HF
BA
BA
Suggested PAD Layout
1005/SOD-323F
SIZE
(mm)
(inch)
2.00
0.079
A
D
A
B
0.70
0.028
C
1.30
0.051
E
C
D
2.70
0.106
E
1.30
0.051
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
4000
7
Case Type
1005/SOD-323F
REV:A
Page 4
QW-G1050
Comchip Technology CO., LTD.