DFM900FXM12-A000 Fast Recovery Diode Module Replaces DS5479-1.3 DS5479-2 April 2010 (LN26758) FEATURES KEY PARAMETERS VRRM VF IF IFM Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates Dual Diodes can be paralleled for 1800A Rating Lead Free Construction 1200V 1.9V 900A 1800A (typ) (max) (max) 1(K) 2(K) 3(A) 4(A) APPLICATIONS Chopper Diodes Boost and Buck Circuits Free-wheel Circuits Multi-level Switch Inverters The DFM900FXM12-A000 is a dual 1200V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. External connection required for a single 1800A diode Fig. 1 Circuit configuration Fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing PWM and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DFM900FXM12-A000 Note: When ordering, please use the complete part number Outline type code: F (See Fig. 7 for further information) Fig. 2 Package 1 /6 www.dynexsemi.com DFM900FXM12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VRRM Parameter Test Conditions Max. Units Repetitive peak reverse voltage Tj = 125°C 1200 V IF Forward current (per arm) DC, Tcase = 75°C, Tj = 125°C 900 A IFM Max. forward current Tcase = 110°C, tp = 1ms 1800 A I t value fuse current rating VR = 0, tp = 10ms, Tj = 125°C 225 kA s Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 125°C 3700 W Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge – per module IEC1287, V1 = 1300V, V2 = 1000V, 50Hz RMS 10 pC 2 It 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Comparative Tracking Index): 350 Symbol Parameter Rth(j-c) Thermal resistance (per arm) Rth(c-h) Thermal resistance – case to heatsink (per module) Tj Tstg Test Conditions Min Typ. Max Units - - 27 °C/kW - - 8 °C/kW - - 125 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M8 - - 10 Nm Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Junction temperature Storage temperature range Screw Torque 2/6 www.dynexsemi.com DFM900FXM12-A000 STATIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise. Symbol Parameter IRM Peak reverse current VF Forward voltage LM Test Conditions Min Typ VR = 1200V, Tj = 125°C Max Units 22.5 mA IF = 900A 1.9 2.2 V IF = 900A, Tj = 125°C 2.1 2.4 V Inductance 20 nH STATIC ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol LM Parameter Test Conditions Min Module inductance (externally connected in parallel) Typ Max 15 Units nH DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions Min Typ. Max Units 150 μC VR = 600V 600 A dIF/dt = 7000A/μs 60 mJ IF = 900A Tcase = 125°C unless stated otherwise Parameter Symbol Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions Min Typ. Max Units 225 μC VR = 600V 720 A dIF/dt = 6300A/μs 105 mJ IF = 900A 3 /6 www.dynexsemi.com DFM900FXM12-A000 Fig. 3 Diode typical forward characteristics Fig. 4 Transient thermal impedance Fig. 5 DC Current rating vs case temperature Fig. 6 RBSOA 4/6 www.dynexsemi.com DFM900FXM12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 130±0.5 114 ±0.1 29.2 ±0.5 57 ±0.25 57 ±0.25 screwing depth max 16 14.5±0.2 11 ±0.2 35 ±0.2 140 ±0.5 124 ±0.25 30 ±0.2 5.25±0.3 4 x M8 2.5 ±0.2 3 x M4 16 ±0.2 18.5 ±0.2 6x 7 28 ±0.5 screwing depth max 8 61.4 ±0.3 18 ±0.2 external connection 2(C) 3(A) 4(A) 38 +1.5 -0.0 1(C) external connection Nominal Weight: 900g Module Outline Type Code: F Fig. 7 Module outline drawing 5 /6 www.dynexsemi.com DFM900FXM12-A000 HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF, United Kingdom DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF, United Kingdom Fax: Tel: Fax: Tel: +44(0)1522 500020 +44(0)1522 502901 / 502753 email: [email protected] +44(0)1522 500550 +44(0)1522 500500 Dynex Semiconductor TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee expressed or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 6/6 www.dynexsemi.com