Preliminary Information DIM750ASM65-TS000 Single Switch IGBT Module Replaces DS6171-2 DS6171-3 October 2015 (LN33002) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates Lead Free construction 6500V 3.0V 750A 1500A * Measured at the auxiliary terminals APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 2400A. The DIM750ASM65-TS000 is a single switch 6500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 9(C) 7(C) 5(C) 8(E) 6(E) 4(E) 3(C) 2(G) 1(E) Fig. 1 Circuit configuration The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM750ASM65-TS000 Note: When ordering, please use the complete part number Outline type code: A (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM750ASM65-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC Parameter Test Conditions Collector-emitter voltage Max. Units VGE = 0V, Tj = 125°C 6500 V VGE = 0V, Tj = 25°C 6500 V VGE = 0V, Tj = -40°C 6000 V ±20 V Gate-emitter voltage Continuous collector current Tcase = 95°C 750 A IC(PK) Peak collector current 1ms, Tcase = 115°C 1500 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 125°C 10 kW Diode I t value VR = 0, tp = 10ms, Tj = 125°C 200 kA s Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 10.2 kV QPD Partial discharge – per module IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS 10 pC Max Units 10 °C/kW 20 °C/kW 6 °C/kW Transistor 125 °C Diode 125 °C 125 °C Mounting – M6 5 Nm Electrical connections – M4 2 Nm Electrical connections – M8 10 Nm 2 It 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Rth(j-c) Thermal resistance – transistor Rth(j-c) Thermal resistance – diode Rth(c-h) Thermal resistance – case to heatsink Tj Tstg Junction temperature 2/8 Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Storage temperature range Screw torque Min -40 Typ. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM750ASM65-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Max Units VGE = 0V, VCE = VCES 4 mA VGE = 0V, VCE = VCES, Tcase = 125°C 90 mA Gate leakage current VGE = ± 20V, VCE = 0V 1 μA Gate threshold voltage IC = 120mA, VGE = VCE 7.5 V Collector-emitter saturation voltage VGE = 15V, IC = 750A 3.0 V VGE = 15V, IC = 750A, Tj = 125°C 4.0 V IF Diode forward current DC 750 A IFM Diode maximum forward current tp = 1ms 1500 A ICES VGE(TH) VF Test Conditions Min Typ Collector cut-off current IGES VCE(sat) Parameter † † Diode forward voltage 5.5 6.5 IF = 750A 3.6 V IF = 750A, Tj = 125°C 4.3 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 120 nF Qg Gate charge ±15V 10 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 2.3 nF LM Module inductance 10 nH RINT Internal resistance 90 μ 3700 A Tj = 125°C, VCC = 4400V SCData Short circuit current, ISC tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM750ASM65-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr Parameter Test Conditions Turn-off delay time Min IC = 750A Typ. Max Units 3.6 μs Fall time VGE = ±15V 450 ns Turn-off energy loss VCE = 3600V 3900 mJ 900 ns 400 ns 4800 mJ 1200 μC 900 A 2600 mJ RG(ON) = 2.2 Turn-on delay time RG(OFF) = 6.8 Cge = 330nF Rise time LS ~ 280nH EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy Diode arm IF = 750A VCE = 3600V dIF/dt = 2000A/μs Tcase = 125°C unless stated otherwise Parameter Symbol td(off) tf EOFF td(on) tr Test Conditions Turn-off delay time Turn-off energy loss ns VCE = 3600V 4000 mJ 800 ns 450 ns 6100 mJ 2100 μC 1000 A 4500 mJ LS ~ 280nH Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy 4/8 450 Cge = 330nF EON Units VGE = ±15V RG(OFF) = 6.8 Rise time Max μs RG(ON) = 2.2 Turn-on delay time Typ. 3.6 IC = 750A Fall time Min Diode arm IF = 750A VCE = 3600V dIF/dt = 2000A/μs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM750ASM65-TS000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics TBD Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM750ASM65-TS000 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM750ASM65-TS000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 190 ±0.5 171 ±0.15 57 ±0.1 6 x M8 screwing depth max. 16 3 x M4 14 ±0.2 18 ±0.2 41 ±0.2 44 ±0.4 140 ±0.5 124 ±0.1 18 ±0.1 7 8 xØ 7 59.2 ±0.2 38 ±0.5 screwing depth max. 8 61.2±0.3 61.2±0.3 48 ±0.5 5 ±0.2 12 ±0.2 external connection external connection 5(C) 7(C) 9(C) 3(C) Nominal Weight: 1700g 9(C) 7(C) Module Outline 2(G) Type Code: 2(G) 5(A) 3(C) A Fig. 11 Module outline drawing 1(E) 1(E) 4(E) 6(E) external connection DIM...ASM....... 8(E) 6(E) 8(E) DIM...ACM....... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 4(C) external connection 7 /8 DIM750ASM65-TS000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Web: http://www.dynexsemi.com DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Email: [email protected] Dynex Semiconductor Ltd. 2015 Technical Documentation – Not for resale. 8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com