Preliminary Information DIM250XCM65-TS000 Single Switch IGBT Module Replaces DS6172-1 DS6172-2 April 2015 (LN32525) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates Lead Free construction * Measured at the auxiliary terminals APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 2400A. The DIM250XCM65-TS000 is a 6500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 6500V 3.0V 250A 500A 7(C) 5(A) 6(E) 4(K) 3(C) 2(G) 1(E) Fig. 1 Circuit configuration The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM250XCM65-TS000 Note: When ordering, please use the complete part number Outline type code: X (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM250XCM65-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC Parameter Test Conditions Collector-emitter voltage Max. Units VGE = 0V, Tj = 125°C 6500 V VGE = 0V, Tj = 25°C 6500 V VGE = 0V, Tj = -40°C 6000 V ±20 V Gate-emitter voltage Continuous collector current Tcase = 90°C 250 A IC(PK) Peak collector current 1ms, Tcase = 115°C 500 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 125°C 3300 W 22 kA s 22 kA s 10.2 kV 10 pC 2 2 It Diode I t value (IGBT arm) VR = 0, tp = 10ms, Tj = 125°C 2 Diode I t value (Diode arm) Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz QPD Partial discharge – per module IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Parameter Rth(j-c) Thermal resistance – transistor (per arm) Rth(j-c) Rth(c-h) Tj Tstg Thermal resistance – diode (IGBT arm) Continuous dissipation – junction to case Min Typ. Max Units - - 30 °C/kW - - 60 °C/kW 60 °C/kW Thermal resistance – diode (Diode arm) Continuous dissipation – junction to case Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 8 °C/kW Transistor - - 125 °C Diode - - 125 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm Junction temperature Storage temperature range Screw torque 2/8 Test Conditions - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250XCM65-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Max Units VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 30 mA Gate leakage current VGE = ± 20V, VCE = 0V 1 μA Gate threshold voltage IC = 40mA, VGE = VCE 7.5 V Collector-emitter saturation voltage VGE = 15V, IC = 250A 3.0 V VGE = 15V, IC = 250A, Tj = 125°C 4.0 V IF Diode forward current DC 250 A IFM Diode maximum forward current tp = 1ms 500 A ICES VGE(TH) VF Test Conditions Min Typ Collector cut-off current IGES VCE(sat) Parameter † † Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) 5.5 6.5 3.6 V 3.6 V 4.3 V 4.3 V IF = 250A IF = 250A, Tj = 125°C Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 40 nF Qg Gate charge ±15V 3 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 0.8 nF LM Module inductance – per arm 25 nH RINT Internal resistance – per arm 270 μ 1200 A Tj = 125°C, VCC = 4400V SCData Short circuit current, ISC tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: † Measured at the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM250XCM65-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr Parameter Test Conditions Turn-off delay time Min IC = 250A Typ. Max Units 3.6 μs Fall time VGE = ±15V 450 ns Turn-off energy loss VCE = 3600V 1300 mJ 900 ns 400 ns 1600 mJ 400 μC 300 A 830 mJ RG(ON) = 6.8 Turn-on delay time RG(OFF) = 22 Cge = 100nF Rise time LS ~ 280nH EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy Diode arm IF = 250A VCE = 3600V dIF/dt = 700A/μs Tcase = 125°C unless stated otherwise Parameter Symbol td(off) tf EOFF td(on) tr Test Conditions Turn-off delay time Turn-off energy loss ns VCE = 3600V 1350 mJ 800 ns 450 ns 2000 mJ 700 μC 340 A 1500 mJ LS ~ 280nH Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy 4/8 450 Cge = 100nF EON Units VGE = ±15V RG(OFF) = 22 Rise time Max μs RG(ON) = 6.8 Turn-on delay time Typ. 3.6 IC = 250A Fall time Min Diode arm IF = 250A VCE = 3600V dIF/dt = 700A/μs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250XCM65-TS000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics TBD Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM250XCM65-TS000 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250XCM65-TS000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 130±0.5 4 x M8 57 ±0.25 57 ±0.25 screwing depth max. 16 18±0.2 41±0.2 44 ±0.2 140 ±0.5 124 ±0.25 18 ±0.1 7 3 x M4 28.5 ±0.2 42.5 ±0.2 30.7 ±0.2 6 xØ 7 38±0.5 screwing depth max. 8 61.2 ±0.3 5 ±0.2 48 +1.5 -0.0 16.5 ±0.2 Nominal Weight: 1100g Module Outline Type Code: X Fig. 11 Module outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /8 DIM250XCM65-TS000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Web: http://www.dynexsemi.com DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Email: [email protected] Dynex Semiconductor Ltd. 2015 Technical Documentation – Not for resale. 8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com