DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-2 DS6108-3 September 2014 (LN31958) FEATURES KEY PARAMETERS 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates 3300V 2.2V 250A 500A * Measured at the auxiliary terminals APPLICATIONS Choppers Motor Controllers Power Supplies Traction Auxiliaries 1(A/C2) 2(K) 3(E2) 2 7(E ) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM250PLM33-TS000 is a 3300V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA). This device is optimised for traction drives and other applications requiring high thermal cycling capability. 2 8(C ) 2 6(G ) Fig. 1 Circuit configuration The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM250PLM33-TS000 Note: When ordering, please use the complete part number Outline type code: P (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1 /8 DIM250PLM33-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V Max. Units 3300 V ±20 V Continuous collector current Tcase = 110°C 250 A IC(PK) Peak collector current 1ms, Tcase = 140°C 500 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 2.6 kW 20 kA s 20 kA s 6000 V 10 pC 2 2 It Diode I t value – IGBT Arm 2 Diode I t value – Diode Arm VR = 0, tp = 10ms, Tj = 150ºC Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz QPD Partial discharge – per module IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS 2 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Comparative Tracking Index): >600 Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Tstg Parameter Thermal resistance – transistor Thermal resistance – diode (IGBT Arm) Thermal resistance – diode (Diode Arm) Thermal resistance – case to heatsink (per module) Min Typ. Max Units - - 48 °C/kW - - 96 °C/kW - - 96 °C/kW Mounting torque 5Nm (with mounting grease) - - 16 °C/kW Transistor - - 150 °C Diode - - 150 °C -40 - 125 °C Mounting – M6 - - 5 Nm Electrical connections – M5 - - 4 Nm Continuous dissipation junction to case Continuous dissipation junction to case Junction temperature Storage temperature range Screw torque 2/8 Test Conditions - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250PLM33-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol ICES Max Units VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 15 mA VGE = 0V, VCE = VCES, Tcase = 150°C 25 mA Gate leakage current VGE = ± 20V, VCE = 0V 1 μA Gate threshold voltage IC = 40mA, VGE = VCE 5.7 V VGE = 15V, IC = 250A 2.2 V VGE = 15V, IC = 250A, Tj = 125°C 2.8 V VGE = 15V, IC = 250A, Tj = 150°C 3.0 V DC 250 A tp = 1ms 500 A 2.4 V 2.5 V 2.5 V 2.6 V 2.4 V 2.5 V Collector cut-off current IGES VGE(TH) VCE(sat) Parameter † IF IFM VF Collector-emitter saturation voltage Diode forward current Diode maximum forward current † Diode forward voltage (IGBT arm) ‡ Diode forward voltage (Diode arm) † Diode forward voltage (IGBT arm) ‡ Diode forward voltage (Diode arm) † Diode forward voltage (IGBT arm) ‡ Diode forward voltage (Diode arm) Test Conditions Min Typ IF = 250A IF = 250A, Tj = 125°C IF = 250A, Tj = 150°C Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 45 nF Qg Gate charge ±15V Including external Cge 5 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 1 nF LM Module inductance 40 nH Internal transistor resistance 500 μ 950 A RINT Tj = 150°C, VCC = 2500V SCData Short circuit current, ISC tp ≤ 10μs, VGE ≤ 15V * VCE (max) = VCES – L x dI/dt IEC 60747-9 Note: † Measured at the auxiliary terminals ‡ Measured at the power busbars * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /8 DIM250PLM33-TS000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions td(off) Turn-off delay time tf EOFF Fall time Turn-off energy loss td(on) tr Turn-on delay time Rise time EON Qrr Turn-on energy loss Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy Min IC = 250A VGE = ±15V VCE = 1800V Rg(ON) = 10 Rg(OFF) = 10 CGE = 56nF LS ~ 150nH IF = 250A VCE = 1800V dIF/dt = 700A/μs Typ. Max Units 2700 ns 520 480 ns mJ 1000 400 ns ns 320 180 mJ μC 160 A 165 mJ Tcase = 125°C unless stated otherwise Parameter Symbol Test Conditions td(off) Turn-off delay time tf EOFF Fall time Turn-off energy loss td(on) tr Turn-on delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy Min Typ. Max Units IC = 250A VGE = ±15V VCE = 1800V Rg(ON) = 10 Rg(OFF) = 10 CGE = 56nF LS ~ 150nH 2750 ns 570 540 ns mJ 1020 420 ns ns 420 mJ IF = 250A VCE = 1800V dIF/dt = 700A/μs 230 μC 200 A 280 mJ Tcase = 150°C unless stated otherwise Parameter Symbol td(off) tf Turn-off delay time Fall time EOFF td(on) Turn-off energy loss Turn-on delay time tr Test Conditions Rise time EON Qrr Turn-on energy loss Diode reverse recovery charge Irr Diode reverse recovery current Erec Diode reverse recovery energy 4/8 IC = 250A VGE = ±15V VCE = 1800V Rg(ON) = 10 Rg(OFF) = 10 CGE = 56nF LS ~ 150nH IF = 250A VCE = 1800V dIF/dt = 700A/μs Min Typ. Max Units 2800 550 ns ns 580 1030 mJ ns 430 ns 460 270 mJ μC 200 A 330 mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250PLM33-TS000 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /8 DIM250PLM33-TS000 6/8 Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM250PLM33-TS000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal Weight: 500g Module Outline Type Code: P Fig. 11 Module outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /8 DIM250PLM33-TS000 IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Tel: +44(0)1522 500500 Web: http://www.dynexsemi.com DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500020 Tel: +44(0)1522 502753 / 502901 Email: [email protected] Dynex Semiconductor Ltd. 2013 Technical Documentation – Not for resale. 8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com