IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dv/dt Rating Single • Low Thermal Resistance D TO-220 FULLPAK Available • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRFIZ14GPbF SiHFIZ14G-E3 IRFIZ14G SiHFIZ14G Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 8.0 5.7 32 0.18 47 27 4.5 - 55 to + 175 300d 10 1.1 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Currenta Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS PD dV/dt TJ, Tstg UNIT V A W/°C mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 1.47 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 www.vishay.com 1 IRFIZ14G, SiHFIZ14G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 5.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 µA 60 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V IGSS VGS = 20 - - 100 nA VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.20 2.2 - - S IDSS RDS(on) gfs ID = 4.8 Ab VGS = 10 V Ab VDS = 25 V, ID = 4.8 µA Dynamic Input Capacitance Ciss VGS = 0 V - 300 - Output Capacitance Coss VDS = 25 V - 160 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 29 - Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg - - 11 - - 3.1 VGS = 10 V ID = 10 A, VDS = 48 V, Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 5.8 Turn-On Delay Time td(on) - 10 - Rise Time Turn-Off Delay Time Fall Time tr td(off) see fig. 6 and 13b VDD = 30 V, ID = 10 A - 50 - Rg = 24 , RD = 2.7, see fig. 10b - 13 - - 19 - - 4.5 - - 7.5 - - - 8.0 - - 32 - - 1.6 tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb TJ = 25 °C, IF = 10 A, di/dt = 100 A/µsb V - 70 140 ns - 0.20 0.40 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 µs; duty cycle 2 %. www.vishay.com 2 Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 IRFIZ14G, SiHFIZ14G Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 www.vishay.com 3 IRFIZ14G, SiHFIZ14G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 IRFIZ14G, SiHFIZ14G Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFIZ14G, SiHFIZ14G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 IRFIZ14G, SiHFIZ14G Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90224. Document Number: 90224 S10-2325-Rev. C, 11-Oct-10 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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