IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling 100 RDS(on) (Ω) VGS = 5 V 0.077 Qg (Max.) (nC) 64 Qgs (nC) 9.4 Qgd (nC) 27 Configuration Single D TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRLI540G SiHLI540G SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 10 VGS at 5 V Continuous Drain Current TC = 25 °C ID TC = 100 °C Pulsed Drain Currenta IDM Linear Derating Factor Mounting Torque A 68 W/°C 400 mJ PD 48 W dV/dt 5.5 V/ns TJ, Tstg - 55 to + 175 TC = 25 °C Operating Junction and Storage Temperature Range 17 12 0.32 Peak Diode Recovery dV/dtc Soldering Recommendations (Peak Temperature) V EAS Single Pulse Avalanche Energyb Maximum Power Dissipation UNIT for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 2.1 mH, RG = 25 Ω, IAS = 17 A (see fig. 12). c. ISD ≤ 28 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRLI540G, SiHLI540G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 100 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 10 V - - ± 100 VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5 V ID = 10 Ab - - 0.077 VGS = 4 V Ab - - 0.11 12 - - - 2200 - - 560 - - 140 - - 12 - ID = 8.5 VDS = 25 V, ID = 10 Ab µA Ω S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 C Total Gate Charge Qg Gate-Source Charge Qgs f = 1.0 MHz VGS = 5 V ID = 28 A, VDS = 80 V, see fig. 6 and 13b - - 64 - - 9.4 pF nC Gate-Drain Charge Qgd - - 27 Turn-On Delay Time td(on) - 8.5 - - 170 - - 35 - - 80 - - 4.5 - - 7.5 - - - 17 - - 68 - - 2.5 - 130 260 ns - 1.5 2.9 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 50 V, ID = 28 A, RG = 4.5 Ω, RD= 1.7 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 17 A, VGS = 0 Vb TJ = 25 °C, IF = 28 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 IRLI540G, SiHLI540G Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 www.vishay.com 3 IRLI540G, SiHLI540G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 IRLI540G, SiHLI540G Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 5V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 5V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRLI540G, SiHLI540G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 5V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 IRLI540G, SiHLI540G Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig.14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?90399. Document Number: 90399 S-Pending-Rev. A, 05-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1