IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGA30N60H3 Highspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGA30N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: C TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IGA30N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 30A 1.95V 175°C G30H603 PG-TO220-3 FP 2 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 18.0 11.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 120.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 43.0 22.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,1) junction - case Rth(j-c) 3.50 K/W Thermal resistance junction - ambient Rth(j-a) 65 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=30.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.95 2.30 2.50 2.40 - Gate-emitter threshold voltage VGE(th) IC=0.43mA,VCE=VGE 4.1 5.1 5.7 Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 16.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 1) V V V 40.0 µA 2000.0 Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 4 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1630 - - 107 - - 50 - VCC=480V,IC=30.0A, VGE=15V - 165.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 160 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 22 - ns - 207 - ns - 22 - ns - 0.73 - mJ - 0.44 - mJ - 1.17 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, rG=10.5Ω,Lσ=95nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW30N60H3) reverse recovery. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 22 - ns - 239 - ns - 23 - ns - 0.95 - mJ - 0.60 - mJ - 1.55 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, rG=10.5Ω,Lσ=95nH, Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW30N60H3) reverse recovery. 5 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration 35 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 30 25 20 15 TC=80° TC=80° 10 TC=110° 10 tp=1µs 10µs 50µs 100µs 1 200µs 500µs TC=110° 5 0 DC 0.1 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 50 20 45 18 40 16 35 30 25 20 15 12 10 8 6 4 5 2 50 75 100 125 150 1000 14 10 25 100 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[kW] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=10,5Ω) 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 6 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration 120 120 VGE=20V VGE=20V 100 17V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 15V 80 13V 11V 9V 60 7V 5V 40 20 0 17V 15V 80 13V 11V 9V 60 7V 5V 40 20 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 5 6 7 8 4.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 90 80 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 100 70 60 50 40 30 20 10 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 10 11 IC=5.5A IC=11A IC=22A 3.5 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 5 10 15 20 25 30 35 40 45 50 55 100 10 60 3 8 IC,COLLECTORCURRENT[A] 13 18 23 28 33 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=10,5Ω,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=30A,testcircuitinFig.E) 6.0 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=30A, rG=10,5Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.43mA) 8 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration 5 3.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 4 3 2 1 0 5 10 15 20 25 30 35 40 45 50 55 2.5 2.0 1.5 1.0 0.5 0.0 60 3 8 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=10,5Ω,testcircuitinFig.E) 23 28 33 2.00 Eoff Eon Ets 1.75 E,SWITCHINGENERGYLOSSES[mJ] 1.75 E,SWITCHINGENERGYLOSSES[mJ] 18 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=30A,testcircuitinFig.E) 2.00 1.50 1.25 1.00 0.75 0.50 0.25 0.00 13 rG,GATERESISTOR[Ω] Eoff Eon Ets 1.50 1.25 1.00 0.75 0.50 0.25 25 50 75 100 125 150 0.00 200 175 Tj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=30A, rG=10,5Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=30A, rG=10,5Ω,testcircuitinFig.E) 9 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 Cies Coes Cres 100 4 2 0 0 20 40 60 80 10 100 120 140 160 180 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=30A) 30 15 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 380 330 280 230 180 130 80 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 18 12 9 6 3 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTj≤150°C) 10 Rev.2.3,2014-03-11 IGA30N60H3 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/kW] Highspeedswitchingseriesthirdgeneration 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 7 ri[K/W]: 0.01772557 0.1398397 0.1820134 0.316471 0.756158 1.46534 0.6234559 τi[s]: 3.9E-5 2.9E-4 3.1E-3 0.02514409 0.316347 1.826891 6.365432 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration PG-TO220-3-FP 12 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 13 Rev.2.3,2014-03-11 IGA30N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IGA30N60H3 Revision:2014-03-11,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2010-07-21 Release of final datasheet 2.2 2013-12-09 New value IRmax limit at 175°C 2.3 2014-03-11 Max ratings Vce, Tvj ≥ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 14 Rev.2.3,2014-03-11