IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKB20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKB20N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G E KeyPerformanceandPackageParameters Type IKB20N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 20A 1.95V 175°C K20H603 PG-TO263-3 2 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 40.0 20.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 80.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 80.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 80.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 170.0 85.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.88 K/W Diode thermal resistance, junction - case Rth(j-c) 1.89 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 65 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 40 K/W 4 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 600 - - VGE=15.0V,IC=20.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.95 2.30 2.50 2.40 - - 1.65 1.67 1.65 2.05 - 4.1 5.1 5.7 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=10.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 10.9 - S V V 40.0 µA 1500.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1100 - - 70 - - 32 - VCC=480V,IC=20.0A, VGE=15V - 120.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz pF 120 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 16 - ns - 20 - ns - 194 - ns - 11 - ns - 0.45 - mJ - 0.24 - mJ - 0.69 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=14.6Ω,Lσ=75nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=10.0A, diF/dt=1000A/µs dirr/dt - 112 - ns - 0.39 - µC - 11.0 - A - -750 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 16 - ns - 15 - ns - 227 - ns - 14 - ns - 0.60 - mJ - 0.36 - mJ - 0.96 - mJ - 191 - ns - 0.91 - µC - 14.2 - A - -500 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=14.6Ω,Lσ=75nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=175°C, VR=400V, IF=10.0A, diF/dt=1000A/µs dirr/dt 6 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration 60 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 50 40 TC=80° 30 TC=110° TC=80° 20 TC=110° tp=1µs 10 10µs 50µs 100µs 200µs 500µs 1 DC 10 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=14,6Ω) 40 160 35 IC,COLLECTORCURRENT[A] 140 Ptot,POWERDISSIPATION[W] 100 1000 Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 180 120 100 80 60 40 30 25 20 15 10 5 20 0 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration 80 80 VGE=20V 70 VGE=20V 70 60 17V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 17V 15V 13V 50 11V 9V 40 7V 30 5V 20 10 0 60 15V 13V 50 11V 9V 40 7V 30 5V 20 10 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 5 6 7 8 4.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 60 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 70 50 40 30 20 10 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 10 11 IC=10A IC=20A IC=40A 3.5 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 0 5 10 15 20 25 30 35 100 10 40 5 10 IC,COLLECTORCURRENT[A] 15 20 25 30 35 40 45 50 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=14,6Ω,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=20A,testcircuitinFig.E) td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 6.0 10 1 25 50 75 100 125 150 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 175 Tj,JUNCTIONTEMPERATURE[°C] typ. min. max. 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=20A, rG=14,6Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.29mA) 9 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration 2.5 2.00 Eoff Eon Ets 1.75 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 2.0 1.5 1.0 0.5 1.50 1.25 1.00 0.75 0.50 0.25 0.0 4 8 12 16 20 24 28 32 36 0.00 40 5 10 15 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=14,6Ω,testcircuitinFig.E) 30 35 40 45 50 1.50 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 25 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=20A,testcircuitinFig.E) 1.0 0.8 0.6 0.4 0.2 0.0 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 1.25 1.00 0.75 0.50 0.25 0.00 200 175 Tj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=20A, rG=14,6Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=20A, rG=14,6Ω,testcircuitinFig.E) 10 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 Cies Coes Cres 100 4 2 0 0 20 40 60 80 100 120 10 140 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=20A) 30 15 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 300 250 200 150 100 50 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 18 12 9 6 3 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTj≤150°C) 11 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538 τi[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.4398 0.6662 0.4734 0.3169 τi[s]: 1.3E-4 1.1E-3 7.1E-3 0.04629 0.001 1E-7 1 1E-6 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 250 1.00 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] Tj=25°C, IF = 20A Tj=175°C, IF = 20A 200 150 100 50 600 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 0.75 Tj=25°C, IF = 20A Tj=175°C, IF = 20A 0.50 0.25 0.00 800 900 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration 18 0 Tj=25°C, IF = 20A Tj=175°C, IF = 20A -200 16 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 20A Tj=175°C, IF = 20A 14 12 10 -400 -600 -800 -1000 8 -1200 6 800 900 -1400 800 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 900 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 40 2.50 Tj=25°C Tj=175°C IF=5A IF=10A IF=20A 35 30 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 2.25 25 20 15 10 2.00 1.75 1.50 1.25 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.00 3.5 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration PG-TO263-3 MIN 4.30 0.00 0.65 0.95 0.33 1.17 8.51 7.10 9.80 6.50 MAX 4.57 0.25 0.85 1.15 0.65 1.40 9.45 7.90 10.31 8.60 MIN 0.169 0.000 0.026 0.037 0.013 0.046 0.335 0.280 0.386 0.256 2.54 5.08 2 14.61 2.29 0.70 1.00 16.05 9.30 4.50 10.70 3.65 1.25 MAX 0.180 0.010 0.033 0.045 0.026 0.055 0.372 0.311 0.406 0.339 Z8B00003324 0 0 5 5 0.100 0.200 2 15.88 3.00 1.60 1.78 16.25 9.50 4.70 10.90 3.85 1.45 0.575 0.090 0.028 0.039 0.632 0.366 0.177 0.421 0.144 0.049 14 7.5mm 0.625 0.118 0.063 0.070 0.640 0.374 0.185 0.429 0.152 0.057 30-08-2007 01 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.3,2014-03-12 IKB20N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IKB20N60H3 Revision:2014-03-12,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2010-07-26 Preliminary datasheet 2.1 2013-12-09 New value IRmax limit at 175°C 2.2 2014-02-26 Without PB free logo 2.3 2014-03-12 Max ratings Vce, Tvj ≥ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.3,2014-03-12