IGBT HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithSiCDiodeIDH15S120 IGW40N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGW40N120H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology recommendedincombinationwithSiCDiodeIDH15S120 Features: C TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •solarinverters •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency 1 2 3 Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IGW40N120H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 1200V 40A 2.05V 175°C G40H1203 PG-TO247-3 2 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 160.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 483.0 220.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 10 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.31 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 1200 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 2.05 2.50 2.70 2.40 - Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=15.0A - 20.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 4 V V V 250.0 µA 2500.0 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2330 - - 150 - - 130 - VCC=960V,IC=40.0A, VGE=15V - 185.0 - nC VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 139 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 57 - ns - 290 - ns - 16 - ns - 1.93 - mJ - 1.23 - mJ - 3.16 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=70nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDH15S120) reverse recovery. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 29 - ns - 49 - ns - 366 - ns - 48 - ns - 2.21 - mJ - 2.66 - mJ - 4.87 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=600V,IC=40.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=70nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IDH15S120) reverse recovery. 5 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration 160 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 140 120 100 80 60 TC=80° 40 tp=1µs 10µs 10 50µs 100µs 200µs 500µs 1 DC TC=110° TC=80° 20 TC=110° 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V, rG=12Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 500 80 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 400 300 200 60 40 20 100 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 6 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration 140 180 160 VGE=20V 120 15V 100 13V 11V 80 9V 7V 60 17V 140 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 17V VGE=20V 5V 40 15V 120 13V 11V 100 9V 80 7V 5V 60 40 20 0 20 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 6 8 5.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C IC,COLLECTORCURRENT[A] 4 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 150 100 50 0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 10 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 15 VGE,GATE-EMITTERVOLTAGE[V] IC=20A IC=40A IC=80A 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 5 15 25 35 45 55 65 100 10 75 0 10 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=12Ω,testcircuitinFig.E) 40 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 30 Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=40A,testcircuitinFig.E) 1000 100 10 20 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=15/0V,IC=40A, rG=12Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1mA) 8 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration 16 9 Eoff Eon Ets 8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 14 12 10 8 6 4 2 0 Eoff Eon Ets 7 6 5 4 3 2 1 5 15 25 35 45 55 65 0 75 0 10 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, rG=12Ω,DiodeIDH15S120) 40 8 Eoff Eon Ets 7 E,SWITCHINGENERGYLOSSES[mJ] 4.5 E,SWITCHINGENERGYLOSSES[mJ] 30 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=600V,VGE=15/0V, IC=40A,DiodeIDH15S120) 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 20 rG,GATERESISTOR[Ω] Eoff Eon Ets 6 5 4 3 2 1 25 50 75 100 125 150 0 400 175 Tj,JUNCTIONTEMPERATURE[°C] 500 600 700 800 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=15/0V,IC=40A, rG=12Ω,DiodeIDH15S120) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=40A, rG=12Ω,DiodeIDH15S120) 9 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration 16 240V 960V 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 Cies Coes Cres 100 4 2 0 0 40 80 120 160 10 200 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=40A) 30 50 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 300 250 200 150 100 50 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 40 30 20 10 0 18 VGE,GATE-EMITTERVOLTAGE[V] 10 12 14 16 18 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤600V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤600V,startatTj≤150°C) 10 Rev.2.2,2014-11-26 IGW40N120H3 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Highspeedswitchingseriesthirdgeneration D=0.5 0.1 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.06414 0.074055 0.162315 10.0E-3 τi[s]: 3.7E-4 3.9E-3 0.01916724 0.3399433 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 12 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration vGE(t) I,V 90% VGE dI/dt a a 10% VGE b b t IC(t) dI 90% IC 90% IC 10% IC 10% IC Figure C. t vCE(t) t td(off) tf t tr td(on) Figure A. vGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t vCE(t) Figure E. t2 E off = t4 VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt 2% VCE t3 t2 t3 t4 t Figure B. 13 Rev.2.2,2014-11-26 IGW40N120H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IGW40N120H3 Revision:2014-11-26,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-07-31 Final data sheet 2.2 2014-11-26 Minor change Figure 7 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 14 Rev.2.2,2014-11-26